JPH0226781B2 - - Google Patents
Info
- Publication number
- JPH0226781B2 JPH0226781B2 JP16204483A JP16204483A JPH0226781B2 JP H0226781 B2 JPH0226781 B2 JP H0226781B2 JP 16204483 A JP16204483 A JP 16204483A JP 16204483 A JP16204483 A JP 16204483A JP H0226781 B2 JPH0226781 B2 JP H0226781B2
- Authority
- JP
- Japan
- Prior art keywords
- impurity
- substrate
- layer
- implanted
- effect transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012535 impurity Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 16
- 239000010410 layer Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 7
- 230000005669 field effect Effects 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000002344 surface layer Substances 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- 239000000370 acceptor Substances 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16204483A JPS6054479A (ja) | 1983-09-05 | 1983-09-05 | 電界効果トランジスタの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16204483A JPS6054479A (ja) | 1983-09-05 | 1983-09-05 | 電界効果トランジスタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6054479A JPS6054479A (ja) | 1985-03-28 |
| JPH0226781B2 true JPH0226781B2 (ko) | 1990-06-12 |
Family
ID=15747021
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16204483A Granted JPS6054479A (ja) | 1983-09-05 | 1983-09-05 | 電界効果トランジスタの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6054479A (ko) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5229637A (en) * | 1988-03-14 | 1993-07-20 | Kabushiki Kaisha Toshiba | Semiconductor device |
| US5153703A (en) * | 1988-03-14 | 1992-10-06 | Kabushiki Kaisha Toshiba | Semiconductor device |
| JP2773425B2 (ja) * | 1990-11-21 | 1998-07-09 | 日本電気株式会社 | 電界効果トランジスタの製造方法 |
-
1983
- 1983-09-05 JP JP16204483A patent/JPS6054479A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6054479A (ja) | 1985-03-28 |
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