JPH0219961B2 - - Google Patents
Info
- Publication number
- JPH0219961B2 JPH0219961B2 JP57000874A JP87482A JPH0219961B2 JP H0219961 B2 JPH0219961 B2 JP H0219961B2 JP 57000874 A JP57000874 A JP 57000874A JP 87482 A JP87482 A JP 87482A JP H0219961 B2 JPH0219961 B2 JP H0219961B2
- Authority
- JP
- Japan
- Prior art keywords
- target
- sio
- film
- thin film
- tasi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 22
- 239000010409 thin film Substances 0.000 claims description 15
- 239000010408 film Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 4
- 239000012298 atmosphere Substances 0.000 claims description 3
- 239000011812 mixed powder Substances 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- MANYRMJQFFSZKJ-UHFFFAOYSA-N bis($l^{2}-silanylidene)tantalum Chemical compound [Si]=[Ta]=[Si] MANYRMJQFFSZKJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 10
- 239000000470 constituent Substances 0.000 description 9
- 239000000843 powder Substances 0.000 description 6
- 238000009826 distribution Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000005299 abrasion Methods 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 1
- 229910004217 TaSi2 Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000001272 pressureless sintering Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Non-Adjustable Resistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57000874A JPS58119606A (ja) | 1982-01-08 | 1982-01-08 | 抵抗膜用タ−ゲツトの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57000874A JPS58119606A (ja) | 1982-01-08 | 1982-01-08 | 抵抗膜用タ−ゲツトの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58119606A JPS58119606A (ja) | 1983-07-16 |
| JPH0219961B2 true JPH0219961B2 (enrdf_load_stackoverflow) | 1990-05-07 |
Family
ID=11485811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57000874A Granted JPS58119606A (ja) | 1982-01-08 | 1982-01-08 | 抵抗膜用タ−ゲツトの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58119606A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995004167A1 (fr) * | 1993-07-27 | 1995-02-09 | Kabushiki Kaisha Toshiba | Cible en siliciure metallique a point de fusion eleve, son procede de production, couche en siliciure metallique a point de fusion eleve, et dispositif a semi-conducteurs |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6311928B2 (ja) * | 2014-07-11 | 2018-04-18 | 三菱マテリアル株式会社 | Ｔａ−Ｓｉ−Ｏ系薄膜形成用スパッタリングターゲット |
-
1982
- 1982-01-08 JP JP57000874A patent/JPS58119606A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995004167A1 (fr) * | 1993-07-27 | 1995-02-09 | Kabushiki Kaisha Toshiba | Cible en siliciure metallique a point de fusion eleve, son procede de production, couche en siliciure metallique a point de fusion eleve, et dispositif a semi-conducteurs |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58119606A (ja) | 1983-07-16 |
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