JPS58119606A - 抵抗膜用タ−ゲツトの製造方法 - Google Patents
抵抗膜用タ−ゲツトの製造方法Info
- Publication number
- JPS58119606A JPS58119606A JP57000874A JP87482A JPS58119606A JP S58119606 A JPS58119606 A JP S58119606A JP 57000874 A JP57000874 A JP 57000874A JP 87482 A JP87482 A JP 87482A JP S58119606 A JPS58119606 A JP S58119606A
- Authority
- JP
- Japan
- Prior art keywords
- target
- thin film
- weight
- sputtering
- sintered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 11
- 239000010409 thin film Substances 0.000 claims description 14
- 239000010408 film Substances 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 239000012298 atmosphere Substances 0.000 claims description 4
- 230000008676 import Effects 0.000 claims description 3
- 241000272525 Anas platyrhynchos Species 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- MANYRMJQFFSZKJ-UHFFFAOYSA-N bis($l^{2}-silanylidene)tantalum Chemical group [Si]=[Ta]=[Si] MANYRMJQFFSZKJ-UHFFFAOYSA-N 0.000 claims 1
- 239000000470 constituent Substances 0.000 description 8
- 238000005245 sintering Methods 0.000 description 6
- 239000000843 powder Substances 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 235000001674 Agaricus brunnescens Nutrition 0.000 description 1
- 241000473391 Archosargus rhomboidalis Species 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000001272 pressureless sintering Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Non-Adjustable Resistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57000874A JPS58119606A (ja) | 1982-01-08 | 1982-01-08 | 抵抗膜用タ−ゲツトの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57000874A JPS58119606A (ja) | 1982-01-08 | 1982-01-08 | 抵抗膜用タ−ゲツトの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58119606A true JPS58119606A (ja) | 1983-07-16 |
| JPH0219961B2 JPH0219961B2 (enrdf_load_stackoverflow) | 1990-05-07 |
Family
ID=11485811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57000874A Granted JPS58119606A (ja) | 1982-01-08 | 1982-01-08 | 抵抗膜用タ−ゲツトの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58119606A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016017225A (ja) * | 2014-07-11 | 2016-02-01 | 三菱マテリアル株式会社 | Ｔａ−Ｓｉ−Ｏ系薄膜形成用スパッタリングターゲット |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69428672T2 (de) * | 1993-07-27 | 2002-07-11 | Kabushiki Kaisha Toshiba, Kawasaki | Verfahren zur herstellung eines hochschmelzenden metallischen silizidtargets |
-
1982
- 1982-01-08 JP JP57000874A patent/JPS58119606A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016017225A (ja) * | 2014-07-11 | 2016-02-01 | 三菱マテリアル株式会社 | Ｔａ−Ｓｉ−Ｏ系薄膜形成用スパッタリングターゲット |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0219961B2 (enrdf_load_stackoverflow) | 1990-05-07 |
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