JPH0126347B2 - - Google Patents
Info
- Publication number
- JPH0126347B2 JPH0126347B2 JP57000871A JP87182A JPH0126347B2 JP H0126347 B2 JPH0126347 B2 JP H0126347B2 JP 57000871 A JP57000871 A JP 57000871A JP 87182 A JP87182 A JP 87182A JP H0126347 B2 JPH0126347 B2 JP H0126347B2
- Authority
- JP
- Japan
- Prior art keywords
- target
- thin film
- sputtering
- sio
- sintered body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 15
- 239000010409 thin film Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 238000001272 pressureless sintering Methods 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- 238000005245 sintering Methods 0.000 description 7
- 239000000470 constituent Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 238000005299 abrasion Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electronic Switches (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57000871A JPS58118272A (ja) | 1982-01-08 | 1982-01-08 | サ−マルプリントヘツド用タ−ゲツトの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57000871A JPS58118272A (ja) | 1982-01-08 | 1982-01-08 | サ−マルプリントヘツド用タ−ゲツトの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58118272A JPS58118272A (ja) | 1983-07-14 |
| JPH0126347B2 true JPH0126347B2 (enrdf_load_stackoverflow) | 1989-05-23 |
Family
ID=11485728
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57000871A Granted JPS58118272A (ja) | 1982-01-08 | 1982-01-08 | サ−マルプリントヘツド用タ−ゲツトの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58118272A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6311928B2 (ja) * | 2014-07-11 | 2018-04-18 | 三菱マテリアル株式会社 | Ｔａ−Ｓｉ−Ｏ系薄膜形成用スパッタリングターゲット |
-
1982
- 1982-01-08 JP JP57000871A patent/JPS58118272A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58118272A (ja) | 1983-07-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB2072100A (en) | Thermal printhead | |
| JPH0126347B2 (enrdf_load_stackoverflow) | ||
| US5530467A (en) | Sputtering target, film resistor and thermal printer head | |
| JP2002043102A (ja) | 薄膜抵抗とその製法 | |
| US4709243A (en) | Thermal head and method for manufacture thereof | |
| JPH0219961B2 (enrdf_load_stackoverflow) | ||
| JPS62167056A (ja) | サ−マルヘツド | |
| JP2870692B2 (ja) | 薄膜型サーマルヘッド | |
| US4862195A (en) | Overcoating layer for thermal printing head | |
| EP0471080B1 (en) | Sputtering target, film resistor formed with the use thereof, and thermal printer head and associated methods of production | |
| JPS62202753A (ja) | 薄膜型サ−マルヘツド | |
| JPS6038006B2 (ja) | サ−マルヘツド | |
| JPS62202756A (ja) | 薄膜型サ−マルヘツド | |
| JPH0712691B2 (ja) | 薄膜型サ−マルヘツド | |
| JPH0712690B2 (ja) | 薄膜型サ−マルヘツド | |
| JPS6145543B2 (enrdf_load_stackoverflow) | ||
| JPH0782921B2 (ja) | サーマルヘッドの製造方法 | |
| JPH067522B2 (ja) | サ−マルヘツド | |
| JPS6145544B2 (enrdf_load_stackoverflow) | ||
| JPH0216561B2 (enrdf_load_stackoverflow) | ||
| JPS60229B2 (ja) | サ−マルヘツド | |
| JPS62201262A (ja) | 薄膜型サ−マルヘツド | |
| JPH07113164A (ja) | スパッタリングターゲット、それを用いて形成した膜抵抗体およびサーマルプリンタヘッド | |
| JPS62201265A (ja) | 薄膜型サ−マルヘツド | |
| JPH0931636A (ja) | スパッタリングターゲットとその製造方法、それを用いて形成した膜抵抗体およびサーマルプリンタヘッド |