JPH0216561B2 - - Google Patents
Info
- Publication number
- JPH0216561B2 JPH0216561B2 JP57000873A JP87382A JPH0216561B2 JP H0216561 B2 JPH0216561 B2 JP H0216561B2 JP 57000873 A JP57000873 A JP 57000873A JP 87382 A JP87382 A JP 87382A JP H0216561 B2 JPH0216561 B2 JP H0216561B2
- Authority
- JP
- Japan
- Prior art keywords
- sio
- target
- film
- cold
- mixed powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 11
- 238000001816 cooling Methods 0.000 claims description 9
- 239000011812 mixed powder Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000010408 film Substances 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000005056 compaction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Non-Adjustable Resistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57000873A JPS58119605A (ja) | 1982-01-08 | 1982-01-08 | 抵抗膜用タ−ゲツトの製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57000873A JPS58119605A (ja) | 1982-01-08 | 1982-01-08 | 抵抗膜用タ−ゲツトの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58119605A JPS58119605A (ja) | 1983-07-16 |
JPH0216561B2 true JPH0216561B2 (enrdf_load_stackoverflow) | 1990-04-17 |
Family
ID=11485783
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57000873A Granted JPS58119605A (ja) | 1982-01-08 | 1982-01-08 | 抵抗膜用タ−ゲツトの製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58119605A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7033873B2 (ja) * | 2017-09-20 | 2022-03-11 | Jx金属株式会社 | スパッタリングターゲット組立品及びその製造方法 |
-
1982
- 1982-01-08 JP JP57000873A patent/JPS58119605A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS58119605A (ja) | 1983-07-16 |
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