JPS6337072B2 - - Google Patents

Info

Publication number
JPS6337072B2
JPS6337072B2 JP59181553A JP18155384A JPS6337072B2 JP S6337072 B2 JPS6337072 B2 JP S6337072B2 JP 59181553 A JP59181553 A JP 59181553A JP 18155384 A JP18155384 A JP 18155384A JP S6337072 B2 JPS6337072 B2 JP S6337072B2
Authority
JP
Japan
Prior art keywords
oxygen content
calcined body
melting point
point metal
high melting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59181553A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6158866A (ja
Inventor
Kenichi Hijikata
Tadashi Sugihara
Masashi Komabayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP59181553A priority Critical patent/JPS6158866A/ja
Priority to US06/769,935 priority patent/US4619697A/en
Priority to DE19853531085 priority patent/DE3531085A1/de
Priority to GB08521604A priority patent/GB2166160B/en
Publication of JPS6158866A publication Critical patent/JPS6158866A/ja
Publication of JPS6337072B2 publication Critical patent/JPS6337072B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Ceramic Products (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP59181553A 1984-08-30 1984-08-30 高融点金属珪化物基複合材料の製造法 Granted JPS6158866A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP59181553A JPS6158866A (ja) 1984-08-30 1984-08-30 高融点金属珪化物基複合材料の製造法
US06/769,935 US4619697A (en) 1984-08-30 1985-08-27 Sputtering target material and process for producing the same
DE19853531085 DE3531085A1 (de) 1984-08-30 1985-08-30 Sputter-quellenmaterial und verfahren zu seiner herstellung
GB08521604A GB2166160B (en) 1984-08-30 1985-08-30 Sputtering target material and process for producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59181553A JPS6158866A (ja) 1984-08-30 1984-08-30 高融点金属珪化物基複合材料の製造法

Publications (2)

Publication Number Publication Date
JPS6158866A JPS6158866A (ja) 1986-03-26
JPS6337072B2 true JPS6337072B2 (enrdf_load_stackoverflow) 1988-07-22

Family

ID=16102795

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59181553A Granted JPS6158866A (ja) 1984-08-30 1984-08-30 高融点金属珪化物基複合材料の製造法

Country Status (1)

Country Link
JP (1) JPS6158866A (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62171911A (ja) * 1986-01-27 1987-07-28 Nippon Mining Co Ltd モリプデン或いはタングステンシリサイドの製造方法
DE3627775A1 (de) * 1986-08-16 1988-02-18 Demetron Verfahren zur herstellung von targets
JPS6350468A (ja) * 1986-08-20 1988-03-03 Mitsubishi Metal Corp スパツタリング用タ−ゲツト材の製造方法
JPH0791636B2 (ja) * 1987-03-09 1995-10-04 日立金属株式会社 スパツタリングタ−ゲツトおよびその製造方法
JP2590091B2 (ja) * 1987-03-26 1997-03-12 株式会社東芝 高融点金属シリサイドターゲットとその製造方法
JPS63303017A (ja) * 1987-06-02 1988-12-09 Nippon Mining Co Ltd タ−ゲツト及びその製造方法
JPS6431966A (en) * 1987-07-25 1989-02-02 Tokin Corp Alloy target material and its production
US5294321A (en) * 1988-12-21 1994-03-15 Kabushiki Kaisha Toshiba Sputtering target
JPH0666288B2 (ja) * 1988-12-21 1994-08-24 日立金属株式会社 スパッタリング装置用ターゲット
KR930004295B1 (ko) * 1988-12-24 1993-05-22 삼성전자 주식회사 Vlsi 장치의 n+ 및 p+ 저항영역에 저저항 접속방법

Also Published As

Publication number Publication date
JPS6158866A (ja) 1986-03-26

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