JPS6431966A - Alloy target material and its production - Google Patents
Alloy target material and its productionInfo
- Publication number
- JPS6431966A JPS6431966A JP18469987A JP18469987A JPS6431966A JP S6431966 A JPS6431966 A JP S6431966A JP 18469987 A JP18469987 A JP 18469987A JP 18469987 A JP18469987 A JP 18469987A JP S6431966 A JPS6431966 A JP S6431966A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- green compact
- low
- target material
- rare earth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To inexpensively manufacture a homogeneous large-diameter alloy target material of low oxygen content, by forming a green compact or preformed body by the use of a hardly oxidizable high-m.p. metal powder and then infiltrating an easily oxidizable low m.p. metal into the above in a nonoxidizing atmosphere in a bulk state. CONSTITUTION:A green compact is formed by using a high m.p. metal powder having a composition consisting of, by atom, <26% rare earth metal and the balance transition metal and this green compact is subjected, if necessary, to presintering in a reducing or neutral atmosphere, by which the green compact or a preformed body is formed. Then, a low m.p. metal consisting of >=26% rare earth metal and the balance transition metal is infiltrated into the above green compact or preformed body in a reducing or neutral atmosphere. As the above rare earth metal, one or more elements among Nd, Gd, Tb, Dy, Ho, Er and Tm are used. On the other hand, one or more elements among Fe, Co and Ni are suitably used as the transition metal. By this method, the large diameter target material in which element concentration in an alloy is uniformized and oxygen content is reduced to a value as low as <=1000ppm and which is free from blowholes and cracks and is desirably rich in ductility can be obtained in high yield.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18469987A JPS6431966A (en) | 1987-07-25 | 1987-07-25 | Alloy target material and its production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18469987A JPS6431966A (en) | 1987-07-25 | 1987-07-25 | Alloy target material and its production |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6431966A true JPS6431966A (en) | 1989-02-02 |
Family
ID=16157834
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18469987A Pending JPS6431966A (en) | 1987-07-25 | 1987-07-25 | Alloy target material and its production |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6431966A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06280006A (en) * | 1993-03-26 | 1994-10-04 | Agency Of Ind Science & Technol | Target for producing superconducting thin film, its production, and production of superconducting material using the target |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6158866A (en) * | 1984-08-30 | 1986-03-26 | 三菱マテリアル株式会社 | Manufacture of high melting point metal silicate base composite material |
| JPS6216481A (en) * | 1985-07-12 | 1987-01-24 | Eisai Co Ltd | Production of 4-cyanoquinuclidine |
| JPS62130235A (en) * | 1985-12-02 | 1987-06-12 | Mitsubishi Metal Corp | Production of target material |
| JPS62130236A (en) * | 1985-12-02 | 1987-06-12 | Mitsubishi Metal Corp | Production of target material |
| JPS6350471A (en) * | 1986-08-16 | 1988-03-03 | デメトロン・ゲゼルシヤフト・フユア・エレクトロニク−ヴエルクシユトツフエ・ミツト・ベシユレンクテル・ハフツング | Production of target |
-
1987
- 1987-07-25 JP JP18469987A patent/JPS6431966A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6158866A (en) * | 1984-08-30 | 1986-03-26 | 三菱マテリアル株式会社 | Manufacture of high melting point metal silicate base composite material |
| JPS6216481A (en) * | 1985-07-12 | 1987-01-24 | Eisai Co Ltd | Production of 4-cyanoquinuclidine |
| JPS62130235A (en) * | 1985-12-02 | 1987-06-12 | Mitsubishi Metal Corp | Production of target material |
| JPS62130236A (en) * | 1985-12-02 | 1987-06-12 | Mitsubishi Metal Corp | Production of target material |
| JPS6350471A (en) * | 1986-08-16 | 1988-03-03 | デメトロン・ゲゼルシヤフト・フユア・エレクトロニク−ヴエルクシユトツフエ・ミツト・ベシユレンクテル・ハフツング | Production of target |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06280006A (en) * | 1993-03-26 | 1994-10-04 | Agency Of Ind Science & Technol | Target for producing superconducting thin film, its production, and production of superconducting material using the target |
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