JPS58118272A - サ−マルプリントヘツド用タ−ゲツトの製造方法 - Google Patents
サ−マルプリントヘツド用タ−ゲツトの製造方法Info
- Publication number
- JPS58118272A JPS58118272A JP57000871A JP87182A JPS58118272A JP S58118272 A JPS58118272 A JP S58118272A JP 57000871 A JP57000871 A JP 57000871A JP 87182 A JP87182 A JP 87182A JP S58118272 A JPS58118272 A JP S58118272A
- Authority
- JP
- Japan
- Prior art keywords
- target
- print head
- thermal print
- manufacture
- normal pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000000034 method Methods 0.000 claims abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000005245 sintering Methods 0.000 claims abstract description 7
- 239000000843 powder Substances 0.000 claims abstract description 6
- 230000001590 oxidative effect Effects 0.000 claims abstract description 4
- 239000000203 mixture Substances 0.000 claims abstract 3
- 239000010409 thin film Substances 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 7
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 4
- 239000000377 silicon dioxide Substances 0.000 abstract description 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 239000010408 film Substances 0.000 description 5
- 239000000470 constituent Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 238000005299 abrasion Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electronic Switches (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57000871A JPS58118272A (ja) | 1982-01-08 | 1982-01-08 | サ−マルプリントヘツド用タ−ゲツトの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57000871A JPS58118272A (ja) | 1982-01-08 | 1982-01-08 | サ−マルプリントヘツド用タ−ゲツトの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58118272A true JPS58118272A (ja) | 1983-07-14 |
| JPH0126347B2 JPH0126347B2 (enrdf_load_stackoverflow) | 1989-05-23 |
Family
ID=11485728
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57000871A Granted JPS58118272A (ja) | 1982-01-08 | 1982-01-08 | サ−マルプリントヘツド用タ−ゲツトの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58118272A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016017225A (ja) * | 2014-07-11 | 2016-02-01 | 三菱マテリアル株式会社 | Ｔａ−Ｓｉ−Ｏ系薄膜形成用スパッタリングターゲット |
-
1982
- 1982-01-08 JP JP57000871A patent/JPS58118272A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016017225A (ja) * | 2014-07-11 | 2016-02-01 | 三菱マテリアル株式会社 | Ｔａ−Ｓｉ−Ｏ系薄膜形成用スパッタリングターゲット |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0126347B2 (enrdf_load_stackoverflow) | 1989-05-23 |
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