JPH0217934B2 - - Google Patents
Info
- Publication number
- JPH0217934B2 JPH0217934B2 JP22150484A JP22150484A JPH0217934B2 JP H0217934 B2 JPH0217934 B2 JP H0217934B2 JP 22150484 A JP22150484 A JP 22150484A JP 22150484 A JP22150484 A JP 22150484A JP H0217934 B2 JPH0217934 B2 JP H0217934B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gallium arsenide
- arsenide layer
- recess
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 37
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 37
- 238000005530 etching Methods 0.000 claims description 18
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 21
- 238000001312 dry etching Methods 0.000 description 7
- 239000010931 gold Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- PXBRQCKWGAHEHS-UHFFFAOYSA-N dichlorodifluoromethane Chemical compound FC(F)(Cl)Cl PXBRQCKWGAHEHS-UHFFFAOYSA-N 0.000 description 1
- 235000019404 dichlorodifluoromethane Nutrition 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22150484A JPS6199380A (ja) | 1984-10-22 | 1984-10-22 | 半導体装置およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22150484A JPS6199380A (ja) | 1984-10-22 | 1984-10-22 | 半導体装置およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6199380A JPS6199380A (ja) | 1986-05-17 |
| JPH0217934B2 true JPH0217934B2 (fr) | 1990-04-24 |
Family
ID=16767744
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22150484A Granted JPS6199380A (ja) | 1984-10-22 | 1984-10-22 | 半導体装置およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6199380A (fr) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3535002A1 (de) * | 1985-10-01 | 1987-04-02 | Telefunken Electronic Gmbh | Sperrschicht-feldeffekttransistor |
| US5181087A (en) * | 1986-02-28 | 1993-01-19 | Hitachi, Ltd. | Semiconductor device and method of producing the same |
| JP2612836B2 (ja) * | 1987-09-23 | 1997-05-21 | シーメンス、アクチエンゲゼルシヤフト | 自己整合ゲートを備えるｍｅｓｆｅｔの製造方法 |
| CA1301955C (fr) * | 1988-09-30 | 1992-05-26 | Masanori Nishiguchi | Mesfet a deux couches superposees |
| JP3027236B2 (ja) * | 1991-07-25 | 2000-03-27 | 沖電気工業株式会社 | 半導体素子およびその製造方法 |
| JPH06260507A (ja) * | 1993-03-05 | 1994-09-16 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
-
1984
- 1984-10-22 JP JP22150484A patent/JPS6199380A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6199380A (ja) | 1986-05-17 |
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