JPH0214312B2 - - Google Patents
Info
- Publication number
- JPH0214312B2 JPH0214312B2 JP58213478A JP21347883A JPH0214312B2 JP H0214312 B2 JPH0214312 B2 JP H0214312B2 JP 58213478 A JP58213478 A JP 58213478A JP 21347883 A JP21347883 A JP 21347883A JP H0214312 B2 JPH0214312 B2 JP H0214312B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- sintering
- sintered body
- target material
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Ceramic Products (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58213478A JPS60108370A (ja) | 1983-11-14 | 1983-11-14 | 高純度炭化けい素スパッタリング用ターゲット材の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58213478A JPS60108370A (ja) | 1983-11-14 | 1983-11-14 | 高純度炭化けい素スパッタリング用ターゲット材の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60108370A JPS60108370A (ja) | 1985-06-13 |
| JPH0214312B2 true JPH0214312B2 (enExample) | 1990-04-06 |
Family
ID=16639861
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58213478A Granted JPS60108370A (ja) | 1983-11-14 | 1983-11-14 | 高純度炭化けい素スパッタリング用ターゲット材の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60108370A (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100487262B1 (ko) * | 1996-02-29 | 2005-09-02 | 가부시키가이샤 브리지스톤 | 탄화규소 소결체 및 그의 제조방법 |
| US6090733A (en) | 1997-08-27 | 2000-07-18 | Bridgestone Corporation | Sintered silicon carbide and method for producing the same |
| JP5466087B2 (ja) * | 2010-06-07 | 2014-04-09 | 株式会社ブリヂストン | 炭化ケイ素焼結体の製造方法 |
-
1983
- 1983-11-14 JP JP58213478A patent/JPS60108370A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60108370A (ja) | 1985-06-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4040849A (en) | Polycrystalline silicon articles by sintering | |
| EP0149044A1 (en) | Boron nitride containing titanium nitride, method of producing the same and composite ceramics produced therefrom | |
| JPS643948B2 (enExample) | ||
| US4070444A (en) | Low cost, high volume silicon purification process | |
| CN113417002A (zh) | 一种厘米尺寸六方氮化硼单晶的生长方法 | |
| US4040848A (en) | Polycrystalline silicon articles containing boron by sintering | |
| US4762810A (en) | Method for the preparation of a sintered body of silicon carbide | |
| JPH1012692A (ja) | ダミーウエハ | |
| JPS5913442B2 (ja) | 高純度の型窒化珪素の製造法 | |
| JP4595153B2 (ja) | 炭化ケイ素体およびその製造方法 | |
| US5011639A (en) | Method for the preparation of a sintered body of silicon carbide | |
| JP2001220122A (ja) | 酸化珪素粉末の製造方法 | |
| JP3233160B2 (ja) | 炭化珪素スパッタリング用ターゲット及びその製造方法 | |
| JP2721678B2 (ja) | β−炭化珪素成形体及びその製造法 | |
| JPS60108370A (ja) | 高純度炭化けい素スパッタリング用ターゲット材の製造方法 | |
| JPH0688866B2 (ja) | 窒化ホウ素被覆ルツボおよびその製造方法 | |
| CN1255170A (zh) | 由c70生长钻石的方法 | |
| JP2614870B2 (ja) | 多結晶質ダイヤモンド焼結体の製造法 | |
| JPH0455142B2 (enExample) | ||
| JPS5930645B2 (ja) | 高純度α型窒化珪素の製造法 | |
| CN103060907A (zh) | 一种在绝缘材料上制备单晶石墨烯的方法 | |
| JPS61168567A (ja) | 炭化珪素焼結体の製造方法 | |
| JPS5921577A (ja) | 炭化珪素粉末成形体の焼結方法 | |
| JP3482480B2 (ja) | 耐酸化性に優れた黒鉛−炭化珪素複合体及びその製造方法 | |
| KR102265623B1 (ko) | 증착공정에서 발생되는 탄화규소 부산물의 재생 방법 |