JPH0213826B2 - - Google Patents
Info
- Publication number
- JPH0213826B2 JPH0213826B2 JP675679A JP675679A JPH0213826B2 JP H0213826 B2 JPH0213826 B2 JP H0213826B2 JP 675679 A JP675679 A JP 675679A JP 675679 A JP675679 A JP 675679A JP H0213826 B2 JPH0213826 B2 JP H0213826B2
- Authority
- JP
- Japan
- Prior art keywords
- gate
- electrode
- semiconductor layer
- type
- fet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 3
- 230000005669 field effect Effects 0.000 claims description 3
- 239000012535 impurity Substances 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 239000012050 conventional carrier Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP675679A JPS5598868A (en) | 1979-01-23 | 1979-01-23 | Insulated gate type field effect semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP675679A JPS5598868A (en) | 1979-01-23 | 1979-01-23 | Insulated gate type field effect semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5598868A JPS5598868A (en) | 1980-07-28 |
| JPH0213826B2 true JPH0213826B2 (cs) | 1990-04-05 |
Family
ID=11647023
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP675679A Granted JPS5598868A (en) | 1979-01-23 | 1979-01-23 | Insulated gate type field effect semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5598868A (cs) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5812365A (ja) * | 1981-07-15 | 1983-01-24 | Japan Electronic Ind Dev Assoc<Jeida> | 薄膜トランジスタ及びその製造方法 |
| US6294796B1 (en) | 1982-04-13 | 2001-09-25 | Seiko Epson Corporation | Thin film transistors and active matrices including same |
| US5698864A (en) * | 1982-04-13 | 1997-12-16 | Seiko Epson Corporation | Method of manufacturing a liquid crystal device having field effect transistors |
| US5736751A (en) * | 1982-04-13 | 1998-04-07 | Seiko Epson Corporation | Field effect transistor having thick source and drain regions |
| FR2527385B1 (fr) * | 1982-04-13 | 1987-05-22 | Suwa Seikosha Kk | Transistor a couche mince et panneau d'affichage a cristaux liquides utilisant ce type de transistor |
| CA2061796C (en) * | 1991-03-28 | 2002-12-24 | Kalluri R. Sarma | High mobility integrated drivers for active matrix displays |
-
1979
- 1979-01-23 JP JP675679A patent/JPS5598868A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5598868A (en) | 1980-07-28 |
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