JPH02126677A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPH02126677A
JPH02126677A JP63280931A JP28093188A JPH02126677A JP H02126677 A JPH02126677 A JP H02126677A JP 63280931 A JP63280931 A JP 63280931A JP 28093188 A JP28093188 A JP 28093188A JP H02126677 A JPH02126677 A JP H02126677A
Authority
JP
Japan
Prior art keywords
region
voltage
electrode
gate
zener diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63280931A
Other languages
English (en)
Japanese (ja)
Other versions
JPH055382B2 (en, 2012
Inventor
Shinjiro Yano
矢野　慎次郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP63280931A priority Critical patent/JPH02126677A/ja
Priority to DE68923789T priority patent/DE68923789T2/de
Priority to US07/536,563 priority patent/US5138415A/en
Priority to KR1019890016101A priority patent/KR920010314B1/ko
Priority to EP89912137A priority patent/EP0400153B1/en
Priority to PCT/JP1989/001139 priority patent/WO1990005383A1/ja
Publication of JPH02126677A publication Critical patent/JPH02126677A/ja
Publication of JPH055382B2 publication Critical patent/JPH055382B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors

Landscapes

  • Thyristors (AREA)
  • Light Receiving Elements (AREA)
  • Electronic Switches (AREA)
JP63280931A 1988-11-07 1988-11-07 半導体装置 Granted JPH02126677A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP63280931A JPH02126677A (ja) 1988-11-07 1988-11-07 半導体装置
DE68923789T DE68923789T2 (de) 1988-11-07 1989-11-07 Optische halbleitervorrichtung mit einer nulldurchgangsfunktion.
US07/536,563 US5138415A (en) 1988-11-07 1989-11-07 Photo-semiconductor device with a zero-cross function
KR1019890016101A KR920010314B1 (ko) 1988-11-07 1989-11-07 반도체 장치
EP89912137A EP0400153B1 (en) 1988-11-07 1989-11-07 Optical semiconductor device having a zero-crossing function
PCT/JP1989/001139 WO1990005383A1 (fr) 1988-11-07 1989-11-07 Dispositif optique a semi-conducteurs possedant une fonction de passage par zero

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63280931A JPH02126677A (ja) 1988-11-07 1988-11-07 半導体装置

Publications (2)

Publication Number Publication Date
JPH02126677A true JPH02126677A (ja) 1990-05-15
JPH055382B2 JPH055382B2 (en, 2012) 1993-01-22

Family

ID=17631925

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63280931A Granted JPH02126677A (ja) 1988-11-07 1988-11-07 半導体装置

Country Status (6)

Country Link
US (1) US5138415A (en, 2012)
EP (1) EP0400153B1 (en, 2012)
JP (1) JPH02126677A (en, 2012)
KR (1) KR920010314B1 (en, 2012)
DE (1) DE68923789T2 (en, 2012)
WO (1) WO1990005383A1 (en, 2012)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3111576B2 (ja) * 1992-01-06 2000-11-27 富士電機株式会社 半導体装置
US6166768A (en) * 1994-01-28 2000-12-26 California Institute Of Technology Active pixel sensor array with simple floating gate pixels
FR2734429B1 (fr) * 1995-05-19 1997-08-01 Sgs Thomson Microelectronics Module interrupteur et d'alimentation-application au demarrage d'un tube fluorescent
JP3495847B2 (ja) * 1995-09-11 2004-02-09 シャープ株式会社 サイリスタを備える半導体集積回路
US5686857A (en) * 1996-02-06 1997-11-11 Motorola, Inc. Zero-crossing triac and method
US6008713A (en) * 1996-02-29 1999-12-28 Texas Instruments Incorporated Monolithic inductor
US6154477A (en) * 1997-05-13 2000-11-28 Berkeley Research Associates, Inc. On-board laser-triggered multi-layer semiconductor power switch
TW374246B (en) * 1998-02-07 1999-11-11 United Microelectronics Corp Flash memory cell structure and method for manufacturing the same
US6140715A (en) * 1998-11-06 2000-10-31 Asea Brown Boveri Ab Electric switching device and a method for performing electric disconnection of a load
TW484235B (en) * 1999-02-25 2002-04-21 Canon Kk Light-receiving element and photoelectric conversion device
GB0108123D0 (en) * 2001-03-30 2001-05-23 Avia Medica Ltd Method and device for provinding theraputic lower leg, calf muscle, ankle, foot and toe exercise for reducing the risk of deep vien thrombosis
US8093652B2 (en) * 2002-08-28 2012-01-10 Ixys Corporation Breakdown voltage for power devices
US20040164321A1 (en) * 2003-02-26 2004-08-26 Dialog Semiconductor Vertical charge transfer active pixel sensor
EP1722423B1 (en) * 2005-05-12 2016-07-06 Ixys Corporation Stable diodes for low and high frequency applications
DE102007006827B3 (de) * 2007-02-07 2008-03-06 Oliver Bartels Halbleiterschalter für Hochspannungen
WO2017094362A1 (ja) * 2015-12-03 2017-06-08 ソニー株式会社 固体撮像素子および撮像装置
DE102017114289A1 (de) 2017-06-27 2018-12-27 Healthfactories GmbH Halbleiterschalter für Hochspannungen mit neuartiger resonanter Übertragerkette
JP7182930B2 (ja) * 2018-07-24 2022-12-05 キヤノン株式会社 放射線検出器
CN111627996B (zh) * 2020-06-08 2023-05-23 无锡光磊电子科技有限公司 一种采用电压驱动的可控硅
TWI876860B (zh) * 2024-01-30 2025-03-11 台亞半導體股份有限公司 光感應零點觸發雙向晶閘體電路及零點觸發電路

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
US4396932A (en) * 1978-06-16 1983-08-02 Motorola, Inc. Method for making a light-activated line-operable zero-crossing switch including two lateral transistors, the emitter of one lying between the emitter and collector of the other
US4295058A (en) * 1979-06-07 1981-10-13 Eaton Corporation Radiant energy activated semiconductor switch
JPS5718358A (en) * 1980-07-08 1982-01-30 Hitachi Ltd Photodriven type thyristor
JPS5737873A (en) * 1980-08-18 1982-03-02 Mitsubishi Electric Corp Semiconductor device
JPS58105572A (ja) * 1981-12-18 1983-06-23 Sanken Electric Co Ltd ゼロクロス光サイリスタ
US4535251A (en) * 1982-12-21 1985-08-13 International Rectifier Corporation A.C. Solid state relay circuit and structure
JPS6035571A (ja) * 1983-08-08 1985-02-23 Sanken Electric Co Ltd 半導体装置
US4779126A (en) * 1983-11-25 1988-10-18 International Rectifier Corporation Optically triggered lateral thyristor with auxiliary region
JPH0635571A (ja) * 1992-05-20 1994-02-10 Funai Electric Co Ltd コンピュータ制御電子機器

Also Published As

Publication number Publication date
US5138415A (en) 1992-08-11
EP0400153B1 (en) 1995-08-09
KR900008703A (ko) 1990-06-03
JPH055382B2 (en, 2012) 1993-01-22
EP0400153A4 (en) 1991-04-10
EP0400153A1 (en) 1990-12-05
WO1990005383A1 (fr) 1990-05-17
KR920010314B1 (ko) 1992-11-26
DE68923789D1 (de) 1995-09-14
DE68923789T2 (de) 1996-02-22

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees