JPH0212010B2 - - Google Patents
Info
- Publication number
- JPH0212010B2 JPH0212010B2 JP16700183A JP16700183A JPH0212010B2 JP H0212010 B2 JPH0212010 B2 JP H0212010B2 JP 16700183 A JP16700183 A JP 16700183A JP 16700183 A JP16700183 A JP 16700183A JP H0212010 B2 JPH0212010 B2 JP H0212010B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- silicon substrate
- tungsten
- tungsten film
- fluoride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 29
- 229910052710 silicon Inorganic materials 0.000 claims description 29
- 239000010703 silicon Substances 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 17
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 17
- 229910052721 tungsten Inorganic materials 0.000 claims description 17
- 239000010937 tungsten Substances 0.000 claims description 17
- 238000006467 substitution reaction Methods 0.000 claims description 8
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 claims description 6
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16700183A JPS6057925A (ja) | 1983-09-09 | 1983-09-09 | シリコン上へのタングステン膜の形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16700183A JPS6057925A (ja) | 1983-09-09 | 1983-09-09 | シリコン上へのタングステン膜の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6057925A JPS6057925A (ja) | 1985-04-03 |
| JPH0212010B2 true JPH0212010B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1990-03-16 |
Family
ID=15841536
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16700183A Granted JPS6057925A (ja) | 1983-09-09 | 1983-09-09 | シリコン上へのタングステン膜の形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6057925A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4968644A (en) * | 1986-06-16 | 1990-11-06 | At&T Bell Laboratories | Method for fabricating devices and devices formed thereby |
| JPS6347364A (ja) * | 1986-08-15 | 1988-02-29 | Nippon Telegr & Teleph Corp <Ntt> | 化学的気相成長法およびその装置 |
| JP2657488B2 (ja) * | 1987-04-07 | 1997-09-24 | 日本真空技術 株式会社 | 金属薄膜形成方法 |
| ES2015776A6 (es) * | 1988-10-07 | 1990-09-01 | American Telephone & Telegraph | Metodo de fabricacion de dispositivos semiconductores. |
| RU2712681C1 (ru) * | 2016-10-27 | 2020-01-30 | Общество с ограниченной ответственностью научно-производственное предприятие "ЭФОМ" | Способ нанесения тонких металлических покрытий |
-
1983
- 1983-09-09 JP JP16700183A patent/JPS6057925A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6057925A (ja) | 1985-04-03 |
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