JPH0160932B2 - - Google Patents

Info

Publication number
JPH0160932B2
JPH0160932B2 JP58200535A JP20053583A JPH0160932B2 JP H0160932 B2 JPH0160932 B2 JP H0160932B2 JP 58200535 A JP58200535 A JP 58200535A JP 20053583 A JP20053583 A JP 20053583A JP H0160932 B2 JPH0160932 B2 JP H0160932B2
Authority
JP
Japan
Prior art keywords
boron
diffusion
temperature
gas
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58200535A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6092611A (ja
Inventor
Takanori Hitomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP20053583A priority Critical patent/JPS6092611A/ja
Publication of JPS6092611A publication Critical patent/JPS6092611A/ja
Publication of JPH0160932B2 publication Critical patent/JPH0160932B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP20053583A 1983-10-26 1983-10-26 半導体素子の不純物拡散方法 Granted JPS6092611A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20053583A JPS6092611A (ja) 1983-10-26 1983-10-26 半導体素子の不純物拡散方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20053583A JPS6092611A (ja) 1983-10-26 1983-10-26 半導体素子の不純物拡散方法

Publications (2)

Publication Number Publication Date
JPS6092611A JPS6092611A (ja) 1985-05-24
JPH0160932B2 true JPH0160932B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-12-26

Family

ID=16425917

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20053583A Granted JPS6092611A (ja) 1983-10-26 1983-10-26 半導体素子の不純物拡散方法

Country Status (1)

Country Link
JP (1) JPS6092611A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01123417A (ja) * 1987-11-07 1989-05-16 Mitsubishi Electric Corp 半導体装置の製造方法
JP2583962B2 (ja) * 1988-05-10 1997-02-19 松下電子工業株式会社 半導体装置の製造方法
JPH0758698B2 (ja) * 1990-08-22 1995-06-21 信越半導体株式会社 半導体ウエーハヘのボロン拡散方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5338597A (en) * 1976-09-14 1978-04-08 Saito Shinichi Combination of arrangements of functions of culture ponds
JPS5674924A (en) * 1979-11-26 1981-06-20 Toshiba Corp Method of manufacturing semiconductor element

Also Published As

Publication number Publication date
JPS6092611A (ja) 1985-05-24

Similar Documents

Publication Publication Date Title
US6194327B1 (en) Rapid thermal etch and rapid thermal oxidation
JPH05182923A (ja) レーザーアニール方法
JP2001332602A (ja) 熱洗浄と熱処理との間のウェハ環境を制御するための装置および方法
JPS618931A (ja) 半導体装置の製造方法
US4857480A (en) Method for diffusing P-type material using boron disks
KR100273318B1 (ko) 반도체 기판의 열처리 장치 및 열처리 방법
JPH0160932B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US3183131A (en) Semiconductor diffusion method
JPH0228246B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS63129633A (ja) 半導体表面処理方法
JPH1126457A (ja) 半導体装置のシリコンオキシニトライド膜形成方法
JPS6362326A (ja) 半導体装置の製造方法
KR100309646B1 (ko) 반도체 기판 특성 개선방법
JPH0223023B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH06342757A (ja) レーザー処理装置
JP3089669B2 (ja) 半導体装置の製造方法
US4105476A (en) Method of manufacturing semiconductors
JPS58155721A (ja) 半導体への不純物拡散方法
JPH1012546A (ja) 半導体ウェハの加熱処理方法
JPH05152236A (ja) 半導体装置の製造方法
JPS5823927B2 (ja) ハンドウタイソウチノセイゾウホウホウ
JPH07130676A (ja) 半導体ウェーハのホウ素拡散方法
JPH0714827A (ja) 半導体装置の製造方法
JPH08264475A (ja) 半導体装置の製造方法
JPH01319943A (ja) 半導体酸化薄膜の形成方法