JPH0143400B2 - - Google Patents

Info

Publication number
JPH0143400B2
JPH0143400B2 JP14792180A JP14792180A JPH0143400B2 JP H0143400 B2 JPH0143400 B2 JP H0143400B2 JP 14792180 A JP14792180 A JP 14792180A JP 14792180 A JP14792180 A JP 14792180A JP H0143400 B2 JPH0143400 B2 JP H0143400B2
Authority
JP
Japan
Prior art keywords
floating gate
gate
series circuit
point
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP14792180A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5771587A (en
Inventor
Hiroshi Iwahashi
Masamichi Asano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP14792180A priority Critical patent/JPS5771587A/ja
Publication of JPS5771587A publication Critical patent/JPS5771587A/ja
Publication of JPH0143400B2 publication Critical patent/JPH0143400B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store

Landscapes

  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
JP14792180A 1980-10-22 1980-10-22 Semiconductor storing device Granted JPS5771587A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14792180A JPS5771587A (en) 1980-10-22 1980-10-22 Semiconductor storing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14792180A JPS5771587A (en) 1980-10-22 1980-10-22 Semiconductor storing device

Publications (2)

Publication Number Publication Date
JPS5771587A JPS5771587A (en) 1982-05-04
JPH0143400B2 true JPH0143400B2 (zh) 1989-09-20

Family

ID=15441098

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14792180A Granted JPS5771587A (en) 1980-10-22 1980-10-22 Semiconductor storing device

Country Status (1)

Country Link
JP (1) JPS5771587A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7064979B2 (en) 1993-08-27 2006-06-20 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and data programming method

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1213241B (it) * 1984-11-07 1989-12-14 Ates Componenti Elettron Matrice di memoria eprom con celle elementari simmetriche mos e suo metodo di scrittura.
JPS61186019A (ja) * 1985-02-13 1986-08-19 Toshiba Corp Ｅ↑２ｐｒｏｍ
JP2752616B2 (ja) * 1987-01-26 1998-05-18 日本電気株式会社 Ｍｏｓ型不揮発性半導体記憶装置
JPH0793014B2 (ja) * 1987-04-24 1995-10-09 株式会社東芝 半導体メモリ
JPH0644630B2 (ja) * 1987-04-24 1994-06-08 株式会社東芝 不揮発性半導体メモリ
US5313420A (en) * 1987-04-24 1994-05-17 Kabushiki Kaisha Toshiba Programmable semiconductor memory
US5245566A (en) * 1987-04-24 1993-09-14 Fujio Masuoka Programmable semiconductor
JPH0793013B2 (ja) * 1987-04-24 1995-10-09 株式会社東芝 半導体メモリ
US5719805A (en) * 1987-04-24 1998-02-17 Kabushiki Kaisha Toshiba Electrically programmable non-volatile semiconductor memory including series connected memory cells and decoder circuitry for applying a ground voltage to non-selected circuit units
US5008856A (en) * 1987-06-29 1991-04-16 Kabushiki Kaisha Toshiba Electrically programmable nonvolatile semiconductor memory device with NAND cell structure
US5448517A (en) 1987-06-29 1995-09-05 Kabushiki Kaisha Toshiba Electrically programmable nonvolatile semiconductor memory device with NAND cell structure
US5877981A (en) * 1987-06-29 1999-03-02 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device having a matrix of memory cells
US5270969A (en) * 1987-06-29 1993-12-14 Kabushiki Kaisha Toshiba Electrically programmable nonvolatile semiconductor memory device with nand cell structure
US6034899A (en) * 1987-06-29 2000-03-07 Kabushiki Kaisha Toshiba Memory cell of nonvolatile semiconductor memory device
JP2664682B2 (ja) * 1987-06-29 1997-10-15 株式会社東芝 不揮発性半導体記置装置
US6545913B2 (en) 1987-06-29 2003-04-08 Kabushiki Kaisha Toshiba Memory cell of nonvolatile semiconductor memory device
JP2635630B2 (ja) * 1987-11-18 1997-07-30 株式会社東芝 不揮発性半導体メモリ装置
JP2732601B2 (ja) * 1987-11-18 1998-03-30 株式会社東芝 不揮発性半導体メモリ装置
US5050125A (en) * 1987-11-18 1991-09-17 Kabushiki Kaisha Toshiba Electrically erasable programmable read-only memory with NAND cellstructure
US4939690A (en) * 1987-12-28 1990-07-03 Kabushiki Kaisha Toshiba Electrically erasable programmable read-only memory with NAND cell structure that suppresses memory cell threshold voltage variation
JP2728679B2 (ja) * 1988-06-27 1998-03-18 株式会社東芝 不揮発性半導体メモリ装置
US5295096A (en) * 1988-07-11 1994-03-15 Mitsubishi Denki Kabushiki Kaisha NAND type EEPROM and operating method therefor
JP3156966B2 (ja) * 1988-09-30 2001-04-16 株式会社東芝 不揮発性半導体メモリ装置
KR910007434B1 (ko) * 1988-12-15 1991-09-26 삼성전자 주식회사 전기적으로 소거 및 프로그램 가능한 반도체 메모리장치 및 그 소거 및 프로그램 방법
KR910004166B1 (ko) * 1988-12-27 1991-06-22 삼성전자주식회사 낸드쎌들을 가지는 전기적으로 소거 및 프로그램 가능한 반도체 메모리장치
JP2573464B2 (ja) * 1993-10-12 1997-01-22 株式会社東芝 不揮発性半導体記憶装置
JP2667626B2 (ja) * 1993-10-12 1997-10-27 株式会社東芝 不揮発性半導体記憶装置
JP3450467B2 (ja) * 1993-12-27 2003-09-22 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
JP2667654B2 (ja) * 1995-06-05 1997-10-27 株式会社東芝 不揮発性半導体記憶装置
JP2845843B2 (ja) * 1996-10-21 1999-01-13 株式会社東芝 不揮発性半導体記憶装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7064979B2 (en) 1993-08-27 2006-06-20 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and data programming method

Also Published As

Publication number Publication date
JPS5771587A (en) 1982-05-04

Similar Documents

Publication Publication Date Title
JPH0143400B2 (zh)
KR0169738B1 (ko) 집적된 sram과 비휘발성 회로를 갖는 nvram
US4999812A (en) Architecture for a flash erase EEPROM memory
US4710900A (en) Non-volatile semiconductor memory device having an improved write circuit
JPH02168497A (ja) 不揮発性半導体メモリシステム
JPS5833638B2 (ja) メモリ装置
US4635229A (en) Semiconductor memory device including non-volatile transistor for storing data in a bistable circuit
US5265061A (en) Apparatus for preventing glitch for semiconductor non-volatile memory device
EP0135699B1 (en) Fet read only memory cell with with word line augmented precharging of the bit line
EP0377840B1 (en) Nonvolatile semiconductor memory device having reference potential generating circuit
KR100254565B1 (ko) 분할된 워드 라인 구조를 갖는 플래시 메모리 장치의 행 디코더회로
KR930008413B1 (ko) 반도체기억장치
KR100445353B1 (ko) 반도체 집적회로
KR100490605B1 (ko) 비휘발성 반도체기억장치
JPH0516119B2 (zh)
JPS6027118B2 (ja) 半導体メモリ装置
EP0377841B1 (en) Semiconductor integrated circuit capable of preventing occurrence of erroneous operation due to noise
JPS60136996A (ja) 半導体記憶装置
US5719805A (en) Electrically programmable non-volatile semiconductor memory including series connected memory cells and decoder circuitry for applying a ground voltage to non-selected circuit units
JP2661187B2 (ja) センスアンプ回路
JPS596560Y2 (ja) 集積回路用ｆｅｔメモリのセンス増幅回路
JPS63108597A (ja) 半導体記憶装置
JP2553290B2 (ja) 半導体集積回路
CA1189972A (en) Self-refreshing memory cell
JPS5877094A (ja) メモリ