JPH0141028B2 - - Google Patents

Info

Publication number
JPH0141028B2
JPH0141028B2 JP57169392A JP16939282A JPH0141028B2 JP H0141028 B2 JPH0141028 B2 JP H0141028B2 JP 57169392 A JP57169392 A JP 57169392A JP 16939282 A JP16939282 A JP 16939282A JP H0141028 B2 JPH0141028 B2 JP H0141028B2
Authority
JP
Japan
Prior art keywords
copper
wire
lead frame
iron
group alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57169392A
Other languages
English (en)
Other versions
JPS5958833A (ja
Inventor
Tomio Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinkawa Ltd
Original Assignee
Shinkawa Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinkawa Ltd filed Critical Shinkawa Ltd
Priority to JP57169392A priority Critical patent/JPS5958833A/ja
Publication of JPS5958833A publication Critical patent/JPS5958833A/ja
Publication of JPH0141028B2 publication Critical patent/JPH0141028B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45647—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Description

【発明の詳細な説明】 本発明は半導体装置に関する。
半導体装置は、図に示すように、リードフレー
ム１に半導体ペレツト２が取付けられ、リードフ
レーム１のリードと半導体ペレツト２の電極とを
ワイヤ３で接続してなる。
前記リードフレーム１は、一般には銅、コバー
ル材の表面に金又は銀メツキ処理を施し、ワイヤ
３との接続を良好にしている。しかしながら、リ
ードフレーム１に金又は銀メツキを施すことは、
金又は銀が高価であるので、半導体装置がコスト
高になる。
そこで最近、特開昭56−93338号公報に示すよ
うに、銅又は銅合金よりなるリードフレームに直
接、即ち表面処理を行わない状態で半導体ペレツ
ト及びワイヤのボンデイングを行うことが行われ
ている。しかしながら、銅又は銅合金材だけでは
表面が硬く、また表面が黒ずんで酸化膜ができる
ので、ワイヤの接続が弱く、ボンデイングされた
ワイヤがはがれることが時々発生する。
本発明は上記従来技術の欠点に鑑みなされたも
ので、品質の優れた半導体装置を提供することを
目的とする。
本発明は銅又は銅系合金もしくは鉄又は鉄系合
金のリードフレームの表面に銅メツキ処理を施し
たことを特徴とする。
銅又は銅系合金（例えば銅−錫合金、銅−錫−
燐合金）もしくは鉄又は鉄系合金（例えば鉄−ニ
ツケル合金、鉄−ニツケル−コバルト合金）の基
材そのものの表面は硬いが、この表面に銅メツキ
処理を施すことにより、リードフレームの表面は
軟質材になる。そこで、ワイヤはこの軟質材より
なる銅メツキ部分に接続されるので、接続の強度
が増加し、ワイヤのはがれがなくなる。またリー
ドフレームは銅メツキされているので、表面の酸
化が防止され、この点からもワイヤの接続が強固
になる。
なお、前記銅メツキ処理はリードフレームの全
面に行つてもよいが、少なくともワイヤが接続さ
れるリードのみに施せば十分である。またワイヤ
の接続は、従来と同様に窒素ガス等の不活性ガス
雰囲気中で行うことにより、更に良好なボンデイ
ングが行えることは勿論である。
以上の説明から明らかな如く、本発明によれ
ば、銅又は銅系合金もしくは鉄又は鉄系合金より
なるリードフレームの表面に銅メツキ処理が施し
てなるので、ワイヤ接続の強度が増大し、ワイヤ
はがれがなくなり、品質が向上する。
【図面の簡単な説明】
図は半導体装置の概略断面図である。 １……リードフレーム、２……半導体ペレツ
ト、３……ワイヤ。

Claims (1)

    【特許請求の範囲】
  1. １ リードフレームに半導体ペレツトが取付けら
    れ、リードフレームのリードと半導体ペレツトの
    電極とをワイヤで接続してなる半導体装置におい
    て、前記リードフレームは銅又は銅系合金もしく
    は鉄又は鉄系合金よりなり、少なくともワイヤが
    接続されるリードの表面に銅メツキ処理を施して
    なることを特徴とする半導体装置。
JP57169392A 1982-09-28 1982-09-28 半導体装置 Granted JPS5958833A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57169392A JPS5958833A (ja) 1982-09-28 1982-09-28 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57169392A JPS5958833A (ja) 1982-09-28 1982-09-28 半導体装置

Publications (2)

Publication Number Publication Date
JPS5958833A JPS5958833A (ja) 1984-04-04
JPH0141028B2 true JPH0141028B2 (ja) 1989-09-01

Family

ID=15885744

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57169392A Granted JPS5958833A (ja) 1982-09-28 1982-09-28 半導体装置

Country Status (1)

Country Link
JP (1) JPS5958833A (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60225450A (ja) * 1984-04-24 1985-11-09 Furukawa Electric Co Ltd:The 半導体装置の製造法
JPS60240149A (ja) * 1984-05-15 1985-11-29 Sharp Corp 半導体装置
JPH0612796B2 (ja) * 1984-06-04 1994-02-16 株式会社日立製作所 半導体装置
JPS6180844A (ja) * 1984-09-28 1986-04-24 Furukawa Electric Co Ltd:The 半導体リ−ドフレ−ム用条材
JPH07116573B2 (ja) * 1985-03-05 1995-12-13 古河電気工業株式会社 リードフレーム用Ｃｕ系条材の製造方法
JPS62213269A (ja) * 1986-03-14 1987-09-19 Hitachi Cable Ltd 半導体用リ−ドフレ−ム
US4800178A (en) * 1987-09-16 1989-01-24 National Semiconductor Corporation Method of electroplating a copper lead frame with copper
JP2528765B2 (ja) * 1992-03-14 1996-08-28 九州日立マクセル株式会社 半導体装置のリ―ドフレ―ム

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55138246A (en) * 1979-04-13 1980-10-28 Toshiba Corp Manufacture of semicondoctor device
JPS57109350A (en) * 1980-12-26 1982-07-07 Toshiba Corp Semiconductor device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5678357U (ja) * 1979-11-09 1981-06-25

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55138246A (en) * 1979-04-13 1980-10-28 Toshiba Corp Manufacture of semicondoctor device
JPS57109350A (en) * 1980-12-26 1982-07-07 Toshiba Corp Semiconductor device

Also Published As

Publication number Publication date
JPS5958833A (ja) 1984-04-04

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