JPH0139222B2 - - Google Patents

Info

Publication number
JPH0139222B2
JPH0139222B2 JP56134196A JP13419681A JPH0139222B2 JP H0139222 B2 JPH0139222 B2 JP H0139222B2 JP 56134196 A JP56134196 A JP 56134196A JP 13419681 A JP13419681 A JP 13419681A JP H0139222 B2 JPH0139222 B2 JP H0139222B2
Authority
JP
Japan
Prior art keywords
layer
titanium
metal
electrode
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56134196A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5835919A (ja
Inventor
Yoshiki Wada
Yasuhiro Kawasaki
Shuichi Kanamori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP13419681A priority Critical patent/JPS5835919A/ja
Publication of JPS5835919A publication Critical patent/JPS5835919A/ja
Publication of JPH0139222B2 publication Critical patent/JPH0139222B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
JP13419681A 1981-08-28 1981-08-28 金属半導体接合電極の製造方法 Granted JPS5835919A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13419681A JPS5835919A (ja) 1981-08-28 1981-08-28 金属半導体接合電極の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13419681A JPS5835919A (ja) 1981-08-28 1981-08-28 金属半導体接合電極の製造方法

Publications (2)

Publication Number Publication Date
JPS5835919A JPS5835919A (ja) 1983-03-02
JPH0139222B2 true JPH0139222B2 (enrdf_load_html_response) 1989-08-18

Family

ID=15122672

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13419681A Granted JPS5835919A (ja) 1981-08-28 1981-08-28 金属半導体接合電極の製造方法

Country Status (1)

Country Link
JP (1) JPS5835919A (enrdf_load_html_response)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH061774B2 (ja) * 1985-03-29 1994-01-05 株式会社東芝 半導体装置
US5278099A (en) * 1985-05-13 1994-01-11 Kabushiki Kaisha Toshiba Method for manufacturing a semiconductor device having wiring electrodes
JPH0732146B2 (ja) * 1988-01-05 1995-04-10 日本電気株式会社 化合物半導体装置の電極形成方法
US4935805A (en) * 1988-05-16 1990-06-19 Eaton Corporation T-type undercut electrical contact on a semiconductor substrate
US4923827A (en) * 1988-05-16 1990-05-08 Eaton Corporation T-type undercut electrical contact process on a semiconductor substrate
US5036023A (en) * 1989-08-16 1991-07-30 At&T Bell Laboratories Rapid thermal processing method of making a semiconductor device
JPH0463480A (ja) * 1990-07-02 1992-02-28 Sharp Corp ３―ｖ族化合物半導体装置
US6204560B1 (en) * 1998-04-20 2001-03-20 Uniphase Laser Enterprise Ag Titanium nitride diffusion barrier for use in non-silicon technologies and method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55120132A (en) * 1979-11-30 1980-09-16 Sumitomo Electric Ind Ltd Manufacture of semiconductor element

Also Published As

Publication number Publication date
JPS5835919A (ja) 1983-03-02

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