JPH0138080B2 - - Google Patents

Info

Publication number
JPH0138080B2
JPH0138080B2 JP58246512A JP24651283A JPH0138080B2 JP H0138080 B2 JPH0138080 B2 JP H0138080B2 JP 58246512 A JP58246512 A JP 58246512A JP 24651283 A JP24651283 A JP 24651283A JP H0138080 B2 JPH0138080 B2 JP H0138080B2
Authority
JP
Japan
Prior art keywords
silicon carbide
substrate
single crystal
type silicon
carbide single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58246512A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60145992A (ja
Inventor
Akira Suzuki
Masaki Furukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP58246512A priority Critical patent/JPS60145992A/ja
Priority to US06/683,651 priority patent/US5037502A/en
Priority to DE19843446956 priority patent/DE3446956A1/de
Publication of JPS60145992A publication Critical patent/JPS60145992A/ja
Publication of JPH0138080B2 publication Critical patent/JPH0138080B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
JP58246512A 1983-12-29 1983-12-29 炭化珪素単結晶基板の製造方法 Granted JPS60145992A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP58246512A JPS60145992A (ja) 1983-12-29 1983-12-29 炭化珪素単結晶基板の製造方法
US06/683,651 US5037502A (en) 1983-12-29 1984-12-19 Process for producing a single-crystal substrate of silicon carbide
DE19843446956 DE3446956A1 (de) 1983-12-29 1984-12-21 Verfahren zum herstellen eines einkristall-substrates aus siliciumcarbid

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58246512A JPS60145992A (ja) 1983-12-29 1983-12-29 炭化珪素単結晶基板の製造方法

Publications (2)

Publication Number Publication Date
JPS60145992A JPS60145992A (ja) 1985-08-01
JPH0138080B2 true JPH0138080B2 (en, 2012) 1989-08-10

Family

ID=17149491

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58246512A Granted JPS60145992A (ja) 1983-12-29 1983-12-29 炭化珪素単結晶基板の製造方法

Country Status (3)

Country Link
US (1) US5037502A (en, 2012)
JP (1) JPS60145992A (en, 2012)
DE (1) DE3446956A1 (en, 2012)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09263497A (ja) * 1996-03-29 1997-10-07 Denso Corp 炭化珪素単結晶の製造方法
US9212305B2 (en) * 2009-03-02 2015-12-15 Nalco Company Compositions for inhibiting the formation of hydrate agglomerates

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61243000A (ja) * 1985-04-18 1986-10-29 Sharp Corp 炭化珪素単結晶基板の製造方法
US5319220A (en) * 1988-01-20 1994-06-07 Sharp Kabushiki Kaisha Silicon carbide semiconductor device
DE4109005C1 (en, 2012) * 1991-03-19 1992-09-10 Cs Halbleiter- Und Solartechnologie Gmbh, 8000 Muenchen, De
JPH04292499A (ja) * 1991-03-22 1992-10-16 Sharp Corp 炭化珪素単結晶の製造方法
DE4121798A1 (de) * 1991-07-02 1993-01-14 Daimler Benz Ag Mehrschichtige, monokristallines siliziumkarbid enthaltene zusammensetzung
JP3214868B2 (ja) * 1991-07-19 2001-10-02 ローム株式会社 ヘテロ接合バイポーラトランジスタの製造方法
US5433167A (en) * 1992-02-04 1995-07-18 Sharp Kabushiki Kaisha Method of producing silicon-carbide single crystals by sublimation recrystallization process using a seed crystal
DE4234508C2 (de) * 1992-10-13 1994-12-22 Cs Halbleiter Solartech Verfahren zur Herstellung eines Wafers mit einer monokristallinen Siliciumcarbidschicht
TW337513B (en) * 1992-11-23 1998-08-01 Cvd Inc Chemical vapor deposition-produced silicon carbide having improved properties and preparation process thereof
CA2113336C (en) * 1993-01-25 2001-10-23 David J. Larkin Compound semi-conductors and controlled doping thereof
SE9502288D0 (sv) † 1995-06-26 1995-06-26 Abb Research Ltd A device and a method for epitaxially growing objects by CVD
SE9503428D0 (sv) † 1995-10-04 1995-10-04 Abb Research Ltd A method for epitaxially growing objects and a device for such a growth
US5944890A (en) * 1996-03-29 1999-08-31 Denso Corporation Method of producing single crystals and a seed crystal used in the method
US6110279A (en) * 1996-03-29 2000-08-29 Denso Corporation Method of producing single-crystal silicon carbide
JP3524679B2 (ja) * 1996-06-21 2004-05-10 東芝セラミックス株式会社 高純度ＣＶＤ−ＳｉＣ質の半導体熱処理用部材及びその製造方法
US6217662B1 (en) * 1997-03-24 2001-04-17 Cree, Inc. Susceptor designs for silicon carbide thin films
KR20000068834A (ko) 1997-08-27 2000-11-25 모리시타 요이찌 탄화규소기판 및 그 제조방법, 및 탄화규소기판을 사용한 반도체소자
JP2891978B1 (ja) * 1998-02-17 1999-05-17 日本ピラー工業株式会社 炭化珪素質構造体
US6706114B2 (en) * 2001-05-21 2004-03-16 Cree, Inc. Methods of fabricating silicon carbide crystals
JP3978494B2 (ja) * 2003-06-12 2007-09-19 国立大学法人東北大学 Ｓｉ薄膜の作製方法
TWD104755S1 (zh) * 2003-11-04 2005-05-21 東京威力科創股份有限公司 半導體製造裝置之處理管
TWD105531S1 (zh) * 2003-11-04 2005-07-11 東京威力科創股份有限公司 半導體製造裝置之處理管
USD520467S1 (en) * 2003-11-04 2006-05-09 Tokyo Electron Limited Process tube for semiconductor device manufacturing apparatus
CN101517028B (zh) 2006-09-27 2013-07-17 H.B.富勒公司 包含植物蜡的热熔融压敏粘合剂组合物以及包含其的制品
TWD125601S (zh) * 2007-05-08 2008-10-21 東京威力科創股份有限公司 半導體製造用加工處理管
USD724551S1 (en) * 2011-11-18 2015-03-17 Tokyo Electron Limited Inner tube for process tube for manufacturing semiconductor wafers
USD720308S1 (en) * 2011-11-18 2014-12-30 Tokyo Electron Limited Inner tube for process tube for manufacturing semiconductor wafers
USD725053S1 (en) * 2011-11-18 2015-03-24 Tokyo Electron Limited Outer tube for process tube for manufacturing semiconductor wafers
FR3103962B1 (fr) * 2019-11-29 2021-11-05 Soitec Silicon On Insulator Procede de fabrication d’une structure composite comprenant une couche mince en sic monocristallin sur un substrat support en sic cristallin

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6814915A (en, 2012) * 1968-10-18 1970-04-21
JPS5213656B2 (en, 2012) * 1972-09-20 1977-04-15
DE2364989C3 (de) * 1973-12-28 1979-10-18 Consortium Fuer Elektrochemische Industrie Gmbh, 8000 Muenchen Verfahren zur Herstellung von Schichten aus Siliciumcarbid auf einem Siliciumsubstrat
US3956032A (en) * 1974-09-24 1976-05-11 The United States Of America As Represented By The United States National Aeronautics And Space Administration Process for fabricating SiC semiconductor devices
US4455385A (en) * 1975-06-30 1984-06-19 General Electric Company Silicon carbide sintered body
JPS5443200A (en) * 1977-09-13 1979-04-05 Sharp Corp Production of silicon carbide substrate
JPS6045159B2 (ja) * 1978-02-03 1985-10-08 シャープ株式会社 炭化珪素結晶層の製造方法
DE3002671C2 (de) * 1979-01-25 1983-04-21 Sharp K.K., Osaka Verfahren zur Herstellung eines Siliciumcarbidsubstrats
JPS5812238B2 (ja) * 1979-02-27 1983-03-07 シャープ株式会社 炭化珪素結晶層の製造方法
JPS56140021A (en) * 1980-03-31 1981-11-02 Mitsubishi Electric Corp Manufacture of silicon carbide thin film
US4512825A (en) * 1983-04-12 1985-04-23 The United States Of America As Represented By The Secretary Of The Navy Recovery of fragile layers produced on substrates by chemical vapor deposition
JPS59203799A (ja) * 1983-04-28 1984-11-17 Sharp Corp 炭化珪素単結晶基板の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09263497A (ja) * 1996-03-29 1997-10-07 Denso Corp 炭化珪素単結晶の製造方法
US9212305B2 (en) * 2009-03-02 2015-12-15 Nalco Company Compositions for inhibiting the formation of hydrate agglomerates

Also Published As

Publication number Publication date
DE3446956A1 (de) 1985-07-11
JPS60145992A (ja) 1985-08-01
US5037502A (en) 1991-08-06
DE3446956C2 (en, 2012) 1992-09-24

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