JPH01282153A - 炭化珪素質反応管 - Google Patents

炭化珪素質反応管

Info

Publication number
JPH01282153A
JPH01282153A JP63109212A JP10921288A JPH01282153A JP H01282153 A JPH01282153 A JP H01282153A JP 63109212 A JP63109212 A JP 63109212A JP 10921288 A JP10921288 A JP 10921288A JP H01282153 A JPH01282153 A JP H01282153A
Authority
JP
Japan
Prior art keywords
silicon carbide
reaction tube
layer
reaction
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63109212A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0585502B2 (cg-RX-API-DMAC10.html
Inventor
Fukuji Matsumoto
松本　福二
Norio Hayashi
典夫 林
Yoshio Tawara
俵　好夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin-Etsu Chemical Co Ltd
Original Assignee
Shin-Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin-Etsu Chemical Co Ltd filed Critical Shin-Etsu Chemical Co Ltd
Priority to JP63109212A priority Critical patent/JPH01282153A/ja
Priority to US07/346,736 priority patent/US4999228A/en
Priority to EP89108265A priority patent/EP0340802B1/en
Priority to DE89108265T priority patent/DE68909481T2/de
Publication of JPH01282153A publication Critical patent/JPH01282153A/ja
Publication of JPH0585502B2 publication Critical patent/JPH0585502B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Ceramic Products (AREA)
JP63109212A 1988-05-06 1988-05-06 炭化珪素質反応管 Granted JPH01282153A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP63109212A JPH01282153A (ja) 1988-05-06 1988-05-06 炭化珪素質反応管
US07/346,736 US4999228A (en) 1988-05-06 1989-05-03 Silicon carbide diffusion tube for semi-conductor
EP89108265A EP0340802B1 (en) 1988-05-06 1989-05-08 Silicon carbide diffusion tube for semi-conductor
DE89108265T DE68909481T2 (de) 1988-05-06 1989-05-08 Siliciumcarbid-Diffusionsrohr für Halbleiter.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63109212A JPH01282153A (ja) 1988-05-06 1988-05-06 炭化珪素質反応管

Publications (2)

Publication Number Publication Date
JPH01282153A true JPH01282153A (ja) 1989-11-14
JPH0585502B2 JPH0585502B2 (cg-RX-API-DMAC10.html) 1993-12-07

Family

ID=14504437

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63109212A Granted JPH01282153A (ja) 1988-05-06 1988-05-06 炭化珪素質反応管

Country Status (1)

Country Link
JP (1) JPH01282153A (cg-RX-API-DMAC10.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5179049A (en) * 1990-11-20 1993-01-12 Asahi Glass Company Ltd. Heat treating apparatuses for semiconductors and high purity silicon carbide parts for the apparatuses and a method of making thereof
JPH05279123A (ja) * 1992-02-04 1993-10-26 Shin Etsu Chem Co Ltd 半導体製造用炭化珪素質部材
JPH06206718A (ja) * 1992-07-31 1994-07-26 Cvd Inc 超高純度炭化ケイ素とそれによって作製した高温半導体加工用器具
JPH1045476A (ja) * 1996-08-01 1998-02-17 Toshiba Ceramics Co Ltd 半導体ウエハ処理具

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59189622A (ja) * 1983-04-13 1984-10-27 Toshiba Ceramics Co Ltd 半導体用拡散炉プロセスチユ−ブ
JPS6311589A (ja) * 1986-07-01 1988-01-19 イビデン株式会社 耐熱性治具及びその製造方法
JPS6335452A (ja) * 1986-07-31 1988-02-16 東芝セラミツクス株式会社 半導体拡散炉用構成部材の製造方法
JPS6385075A (ja) * 1986-09-26 1988-04-15 宇部興産株式会社 半導体用拡散炉プロセスチユ−ブ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59189622A (ja) * 1983-04-13 1984-10-27 Toshiba Ceramics Co Ltd 半導体用拡散炉プロセスチユ−ブ
JPS6311589A (ja) * 1986-07-01 1988-01-19 イビデン株式会社 耐熱性治具及びその製造方法
JPS6335452A (ja) * 1986-07-31 1988-02-16 東芝セラミツクス株式会社 半導体拡散炉用構成部材の製造方法
JPS6385075A (ja) * 1986-09-26 1988-04-15 宇部興産株式会社 半導体用拡散炉プロセスチユ−ブ

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5179049A (en) * 1990-11-20 1993-01-12 Asahi Glass Company Ltd. Heat treating apparatuses for semiconductors and high purity silicon carbide parts for the apparatuses and a method of making thereof
JPH05279123A (ja) * 1992-02-04 1993-10-26 Shin Etsu Chem Co Ltd 半導体製造用炭化珪素質部材
JPH06206718A (ja) * 1992-07-31 1994-07-26 Cvd Inc 超高純度炭化ケイ素とそれによって作製した高温半導体加工用器具
JPH1045476A (ja) * 1996-08-01 1998-02-17 Toshiba Ceramics Co Ltd 半導体ウエハ処理具

Also Published As

Publication number Publication date
JPH0585502B2 (cg-RX-API-DMAC10.html) 1993-12-07

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