JPH0126171B2 - - Google Patents
Info
- Publication number
- JPH0126171B2 JPH0126171B2 JP12902981A JP12902981A JPH0126171B2 JP H0126171 B2 JPH0126171 B2 JP H0126171B2 JP 12902981 A JP12902981 A JP 12902981A JP 12902981 A JP12902981 A JP 12902981A JP H0126171 B2 JPH0126171 B2 JP H0126171B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film
- impurity
- manufacturing
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 54
- 239000012535 impurity Substances 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 15
- 238000009792 diffusion process Methods 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 13
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 12
- 239000010408 film Substances 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 229910052733 gallium Inorganic materials 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 150000002500 ions Chemical class 0.000 description 5
- 238000010586 diagram Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000010581 sealed tube method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12902981A JPS5831519A (ja) | 1981-08-18 | 1981-08-18 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12902981A JPS5831519A (ja) | 1981-08-18 | 1981-08-18 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5831519A JPS5831519A (ja) | 1983-02-24 |
| JPH0126171B2 true JPH0126171B2 (en, 2012) | 1989-05-22 |
Family
ID=14999362
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12902981A Granted JPS5831519A (ja) | 1981-08-18 | 1981-08-18 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5831519A (en, 2012) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6393153A (ja) * | 1986-10-07 | 1988-04-23 | Toshiba Corp | 半導体装置の製造方法 |
| JP3015717B2 (ja) * | 1994-09-14 | 2000-03-06 | 三洋電機株式会社 | 半導体装置の製造方法および半導体装置 |
| US6268657B1 (en) | 1995-09-14 | 2001-07-31 | Sanyo Electric Co., Ltd. | Semiconductor devices and an insulating layer with an impurity |
| US6288438B1 (en) | 1996-09-06 | 2001-09-11 | Sanyo Electric Co., Ltd. | Semiconductor device including insulation film and fabrication method thereof |
| JP3015767B2 (ja) * | 1996-12-25 | 2000-03-06 | 三洋電機株式会社 | 半導体装置の製造方法及び半導体装置 |
| US6690084B1 (en) | 1997-09-26 | 2004-02-10 | Sanyo Electric Co., Ltd. | Semiconductor device including insulation film and fabrication method thereof |
| JP2975934B2 (ja) | 1997-09-26 | 1999-11-10 | 三洋電機株式会社 | 半導体装置の製造方法及び半導体装置 |
| US6794283B2 (en) | 1998-05-29 | 2004-09-21 | Sanyo Electric Co., Ltd. | Semiconductor device and fabrication method thereof |
| FR2823596B1 (fr) | 2001-04-13 | 2004-08-20 | Commissariat Energie Atomique | Substrat ou structure demontable et procede de realisation |
| US6917110B2 (en) | 2001-12-07 | 2005-07-12 | Sanyo Electric Co., Ltd. | Semiconductor device comprising an interconnect structure with a modified low dielectric insulation layer |
| FR2899378B1 (fr) * | 2006-03-29 | 2008-06-27 | Commissariat Energie Atomique | Procede de detachement d'un film mince par fusion de precipites |
-
1981
- 1981-08-18 JP JP12902981A patent/JPS5831519A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5831519A (ja) | 1983-02-24 |
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