JP7845191B2 - 半導体装置を製造する方法 - Google Patents

半導体装置を製造する方法

Info

Publication number
JP7845191B2
JP7845191B2 JP2022567012A JP2022567012A JP7845191B2 JP 7845191 B2 JP7845191 B2 JP 7845191B2 JP 2022567012 A JP2022567012 A JP 2022567012A JP 2022567012 A JP2022567012 A JP 2022567012A JP 7845191 B2 JP7845191 B2 JP 7845191B2
Authority
JP
Japan
Prior art keywords
curable resin
resin film
carrier
layer
protective layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022567012A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2022118971A1 (https=
Inventor
省吾 祖父江
紗瑛子 小川
大助 池田
奎佑 大河原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Showa Denko Materials Co Ltd
Resonac Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd, Showa Denko Materials Co Ltd, Resonac Corp filed Critical Hitachi Chemical Co Ltd
Publication of JPWO2022118971A1 publication Critical patent/JPWO2022118971A1/ja
Application granted granted Critical
Publication of JP7845191B2 publication Critical patent/JP7845191B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • H10W74/019Manufacture or treatment using temporary auxiliary substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00Cutting or separating of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00Arrangements for protection of devices
    • H10W42/121Arrangements for protection of devices protecting against mechanical damage
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00Marks applied to devices, e.g. for alignment or identification
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • H10W74/014Manufacture or treatment using batch processing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H10W74/117Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations the substrate having spherical bumps for external connection
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7424Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self-supporting substrates

Landscapes

  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Laminated Bodies (AREA)
JP2022567012A 2020-12-04 2021-12-03 半導体装置を製造する方法 Active JP7845191B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPPCT/JP2020/045336 2020-12-04
JP2020045336 2020-12-04
PCT/JP2021/044561 WO2022118971A1 (ja) 2020-12-04 2021-12-03 半導体装置を製造する方法

Publications (2)

Publication Number Publication Date
JPWO2022118971A1 JPWO2022118971A1 (https=) 2022-06-09
JP7845191B2 true JP7845191B2 (ja) 2026-04-14

Family

ID=81853336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022567012A Active JP7845191B2 (ja) 2020-12-04 2021-12-03 半導体装置を製造する方法

Country Status (5)

Country Link
US (1) US20240006192A1 (https=)
JP (1) JP7845191B2 (https=)
KR (1) KR20230113759A (https=)
CN (1) CN116547800A (https=)
WO (1) WO2022118971A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11996384B2 (en) 2020-12-15 2024-05-28 Pulseforge, Inc. Method and apparatus for debonding temporarily bonded wafers in wafer-level packaging applications
CN116888714A (zh) * 2021-02-01 2023-10-13 长濑化成株式会社 电子部件安装基板的密封方法及热固化性片材
WO2025061255A1 (de) * 2023-09-18 2025-03-27 Erich Thallner Substratstapel, modifiziertes schichtsystem, verfahren zum handhaben des substratstapels und vorrichtung für ein solches verfahren
CN121816100A (zh) * 2026-03-11 2026-04-07 北京升宇科技有限公司 微型高可靠封装结构及其制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3853247B2 (ja) 2002-04-16 2006-12-06 日東電工株式会社 電子部品用加熱剥離型粘着シートおよび電子部品の加工方法並びに電子部品
JP2006222164A (ja) * 2005-02-08 2006-08-24 Shinko Electric Ind Co Ltd 半導体装置及びその製造方法
KR101058621B1 (ko) * 2009-07-23 2011-08-22 삼성전기주식회사 반도체 패키지 및 이의 제조 방법
JP2013074184A (ja) * 2011-09-28 2013-04-22 Nitto Denko Corp 半導体装置の製造方法
JP2016048729A (ja) * 2014-08-27 2016-04-07 株式会社東芝 仮接着用支持基板及び半導体デバイスの製造方法
JP2016139754A (ja) * 2015-01-29 2016-08-04 日立化成株式会社 半導体装置の製造方法
JP6859729B2 (ja) * 2016-07-05 2021-04-14 昭和電工マテリアルズ株式会社 仮固定用樹脂組成物、仮固定用樹脂フィルム、仮固定用樹脂フィルムシート及び半導体装置の製造方法
JP7221046B2 (ja) * 2018-12-26 2023-02-13 東京応化工業株式会社 接着剤組成物、積層体、積層体の製造方法、及び電子部品の製造方法

Also Published As

Publication number Publication date
KR20230113759A (ko) 2023-08-01
TW202230613A (zh) 2022-08-01
JPWO2022118971A1 (https=) 2022-06-09
CN116547800A (zh) 2023-08-04
WO2022118971A1 (ja) 2022-06-09
US20240006192A1 (en) 2024-01-04

Similar Documents

Publication Publication Date Title
JP7845191B2 (ja) 半導体装置を製造する方法
CN102002323B (zh) 带有切割片的胶粘薄膜及其制造方法
TWI454552B (zh) 晶片接合薄膜、切割-晶片接合薄膜及半導體裝置
JP5544766B2 (ja) 半導体加工用接着フィルム積層体
EP2341529A1 (en) Method for manufacturing semiconductor device and semiconductor device
JP2012124466A (ja) 半導体装置用接着フィルム、及び、半導体装置
KR101485660B1 (ko) 반도체 장치 제조용 접착 시트 및 반도체 장치의 제조 방법
TW201510158A (zh) 保護膜形成薄膜、保護膜形成用片以及檢查方法
KR20110019408A (ko) 열경화형 다이본드 필름
JP7226664B2 (ja) 半導体装置の製造方法
JP2016119493A (ja) ダイボンドフィルム、ダイシング・ダイボンドフィルム、ダイボンドフィルムの製造方法、及び、ダイボンドフィルムを有する半導体装置
TW201533132A (zh) 保護膜形成用組成物、保護膜形成用薄片、及附有保護膜的晶片
KR20170113552A (ko) 필름상 접착제, 그것을 사용한 반도체 장치
JP3617639B2 (ja) 半導体加工用シート、並びに、それを用いた半導体装置の製造方法及び半導体装置
JP7845190B2 (ja) 硬化性樹脂フィルム、半導体装置製造用フィルム材、半導体装置製造用硬化性樹脂組成物、及び、半導体装置を製造する方法
TWI918789B (zh) 製造半導體裝置之方法
JP7226669B2 (ja) 半導体装置の製造方法
CN102136432A (zh) 利用耐热胶粘片制造半导体器件的方法
TWI906490B (zh) 保護膜形成膜、保護膜形成用片、保護膜形成用複合片及裝置的製造方法
JP6550894B2 (ja) 積層体の製造方法
CN103715124A (zh) 利用响应于能量射线的耐热粘合片制造半导体器件的方法
JP7344779B2 (ja) 半導体背面密着フィルム
TWI849223B (zh) 保護膜形成用膜以及保護膜形成用複合片
JP2025030776A (ja) 硬化性樹脂フィルム複合シート及び硬化封止体の製造方法
CN121079379A (zh) 热固性黏合剂组合物及其紫外线照射物、层叠膜、以及连接体及其制造方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20241105

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250916

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20251117

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20260303

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20260316

R150 Certificate of patent or registration of utility model

Ref document number: 7845191

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150