JP7786823B2 - 光電変換装置及び光電変換システム - Google Patents
光電変換装置及び光電変換システムInfo
- Publication number
- JP7786823B2 JP7786823B2 JP2022000008A JP2022000008A JP7786823B2 JP 7786823 B2 JP7786823 B2 JP 7786823B2 JP 2022000008 A JP2022000008 A JP 2022000008A JP 2022000008 A JP2022000008 A JP 2022000008A JP 7786823 B2 JP7786823 B2 JP 7786823B2
- Authority
- JP
- Japan
- Prior art keywords
- conductive portion
- photoelectric conversion
- conversion device
- potential
- wiring layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8057—Optical shielding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/807—Pixel isolation structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/809—Constructional details of image sensors of hybrid image sensors
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022000008A JP7786823B2 (ja) | 2022-01-01 | 2022-01-01 | 光電変換装置及び光電変換システム |
| US18/145,076 US12495635B2 (en) | 2022-01-01 | 2022-12-22 | Photoelectric conversion apparatus and photoelectric conversion system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022000008A JP7786823B2 (ja) | 2022-01-01 | 2022-01-01 | 光電変換装置及び光電変換システム |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2023099381A JP2023099381A (ja) | 2023-07-13 |
| JP2023099381A5 JP2023099381A5 (enExample) | 2024-11-29 |
| JP7786823B2 true JP7786823B2 (ja) | 2025-12-16 |
Family
ID=86990991
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022000008A Active JP7786823B2 (ja) | 2022-01-01 | 2022-01-01 | 光電変換装置及び光電変換システム |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US12495635B2 (enExample) |
| JP (1) | JP7786823B2 (enExample) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019033136A (ja) | 2017-08-04 | 2019-02-28 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子 |
| US20200227582A1 (en) | 2017-09-29 | 2020-07-16 | Taiwan Semiconductor Manufacturing Company Ltd. | Spad image sensor and associated fabricating method |
| WO2020189082A1 (ja) | 2019-03-19 | 2020-09-24 | ソニーセミコンダクタソリューションズ株式会社 | センサチップ、電子機器、及び測距装置 |
| JP2021027277A (ja) | 2019-08-08 | 2021-02-22 | キヤノン株式会社 | 光電変換装置、光電変換システム |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5723094B2 (ja) | 2009-12-11 | 2015-05-27 | キヤノン株式会社 | 固体撮像装置およびカメラ |
| JP2012109540A (ja) | 2010-10-26 | 2012-06-07 | Canon Inc | 固体撮像装置の製造方法 |
| KR102180102B1 (ko) | 2014-03-07 | 2020-11-17 | 삼성전자주식회사 | 이미지 센서 및 그 제조방법 |
| US9979916B2 (en) | 2014-11-21 | 2018-05-22 | Canon Kabushiki Kaisha | Imaging apparatus and imaging system |
| JP2016154166A (ja) | 2015-02-20 | 2016-08-25 | キヤノン株式会社 | 光電変換装置及びその製造方法 |
| TWI692859B (zh) | 2015-05-15 | 2020-05-01 | 日商新力股份有限公司 | 固體攝像裝置及其製造方法、以及電子機器 |
| JP6541523B2 (ja) | 2015-09-11 | 2019-07-10 | キヤノン株式会社 | 撮像装置、撮像システム、および、撮像装置の制御方法 |
| US10205894B2 (en) | 2015-09-11 | 2019-02-12 | Canon Kabushiki Kaisha | Imaging device and imaging system |
| JP2017195215A (ja) | 2016-04-18 | 2017-10-26 | キヤノン株式会社 | 撮像素子及びその製造方法 |
| JP6776011B2 (ja) | 2016-06-10 | 2020-10-28 | キヤノン株式会社 | 撮像装置及び撮像システム |
| JP7058479B2 (ja) | 2016-10-18 | 2022-04-22 | ソニーセミコンダクタソリューションズ株式会社 | 光検出器 |
| JP2018092976A (ja) | 2016-11-30 | 2018-06-14 | キヤノン株式会社 | 撮像装置 |
| JP6957157B2 (ja) | 2017-01-26 | 2021-11-02 | キヤノン株式会社 | 固体撮像装置、撮像システム、および固体撮像装置の製造方法 |
| US10818715B2 (en) | 2017-06-26 | 2020-10-27 | Canon Kabushiki Kaisha | Solid state imaging device and manufacturing method thereof |
| JP6987562B2 (ja) | 2017-07-28 | 2022-01-05 | キヤノン株式会社 | 固体撮像素子 |
| JP7158846B2 (ja) | 2017-11-30 | 2022-10-24 | キヤノン株式会社 | 半導体装置および機器 |
| JP7066392B2 (ja) | 2017-12-14 | 2022-05-13 | キヤノン株式会社 | 撮像装置 |
| JP7108421B2 (ja) | 2018-02-15 | 2022-07-28 | キヤノン株式会社 | 撮像装置及び撮像システム |
| JP7361452B2 (ja) | 2018-02-19 | 2023-10-16 | キヤノン株式会社 | 撮像装置およびカメラ |
| US10833207B2 (en) | 2018-04-24 | 2020-11-10 | Canon Kabushiki Kaisha | Photo-detection device, photo-detection system, and mobile apparatus |
| KR102646903B1 (ko) * | 2018-09-04 | 2024-03-12 | 삼성전자주식회사 | 이미지 센서 |
| US11244978B2 (en) * | 2018-10-17 | 2022-02-08 | Canon Kabushiki Kaisha | Photoelectric conversion apparatus and equipment including the same |
| US11393870B2 (en) | 2018-12-18 | 2022-07-19 | Canon Kabushiki Kaisha | Photoelectric conversion device, imaging system, and mobile apparatus |
| JP7237622B2 (ja) | 2019-02-05 | 2023-03-13 | キヤノン株式会社 | 光電変換装置 |
| JP7555703B2 (ja) | 2019-02-25 | 2024-09-25 | キヤノン株式会社 | 光電変換装置、撮像システム及び移動体 |
| JP7517804B2 (ja) | 2019-11-06 | 2024-07-17 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子および測距装置 |
| JP7652543B2 (ja) | 2020-07-29 | 2025-03-27 | キヤノン株式会社 | 光電変換装置 |
| JP7534902B2 (ja) | 2020-09-23 | 2024-08-15 | キヤノン株式会社 | 光電変換装置、撮像装置、半導体装置及び光電変換システム |
| US12119334B2 (en) | 2020-10-14 | 2024-10-15 | Canon Kabushiki Kaisha | Photoelectric conversion apparatus, photo-detection system, and movable body |
| JP2023023218A (ja) | 2021-08-04 | 2023-02-16 | キヤノン株式会社 | 光電変換装置 |
| JP7510396B2 (ja) | 2021-08-17 | 2024-07-03 | キヤノン株式会社 | 光電変換装置、その製造方法及び機器 |
-
2022
- 2022-01-01 JP JP2022000008A patent/JP7786823B2/ja active Active
- 2022-12-22 US US18/145,076 patent/US12495635B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019033136A (ja) | 2017-08-04 | 2019-02-28 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子 |
| US20200227582A1 (en) | 2017-09-29 | 2020-07-16 | Taiwan Semiconductor Manufacturing Company Ltd. | Spad image sensor and associated fabricating method |
| WO2020189082A1 (ja) | 2019-03-19 | 2020-09-24 | ソニーセミコンダクタソリューションズ株式会社 | センサチップ、電子機器、及び測距装置 |
| JP2021027277A (ja) | 2019-08-08 | 2021-02-22 | キヤノン株式会社 | 光電変換装置、光電変換システム |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2023099381A (ja) | 2023-07-13 |
| US20230215899A1 (en) | 2023-07-06 |
| US12495635B2 (en) | 2025-12-09 |
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