JP7651472B2 - フォトディテクタ - Google Patents

フォトディテクタ Download PDF

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Publication number
JP7651472B2
JP7651472B2 JP2021560086A JP2021560086A JP7651472B2 JP 7651472 B2 JP7651472 B2 JP 7651472B2 JP 2021560086 A JP2021560086 A JP 2021560086A JP 2021560086 A JP2021560086 A JP 2021560086A JP 7651472 B2 JP7651472 B2 JP 7651472B2
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Japan
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regions
contact
type
light absorbing
contact regions
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JP2021560086A
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Japanese (ja)
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JP2022528731A5 (https=
JP2022528731A (ja
Inventor
セルゲイ オクホニン，
マキシム グリーヴ，
デニス サリン，
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Actlight SA
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Actlight SA
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Priority claimed from US16/387,011 external-priority patent/US10964837B2/en
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Publication of JP2022528731A5 publication Critical patent/JP2022528731A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H10F39/1847—Multispectral infrared image sensors having a stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

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  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
JP2021560086A 2019-04-17 2020-04-14 フォトディテクタ Active JP7651472B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US16/387,011 US10964837B2 (en) 2013-03-15 2019-04-17 Photo detector systems and methods of operating same
US16/387,011 2019-04-17
US16/429,158 2019-06-03
US16/429,158 US11114480B2 (en) 2013-03-15 2019-06-03 Photodetector
PCT/EP2020/060382 WO2020212303A1 (en) 2019-04-17 2020-04-14 Photodetector

Publications (3)

Publication Number Publication Date
JP2022528731A JP2022528731A (ja) 2022-06-15
JP2022528731A5 JP2022528731A5 (https=) 2023-04-24
JP7651472B2 true JP7651472B2 (ja) 2025-03-26

Family

ID=72837080

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021560086A Active JP7651472B2 (ja) 2019-04-17 2020-04-14 フォトディテクタ

Country Status (7)

Country Link
US (2) US11114480B2 (https=)
EP (1) EP3956928A1 (https=)
JP (1) JP7651472B2 (https=)
KR (1) KR102613380B1 (https=)
CN (1) CN113841241B (https=)
IL (1) IL287244B1 (https=)
WO (1) WO2020212303A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11837669B2 (en) 2013-03-15 2023-12-05 ActLight SA Photo detector systems and methods of operating same
US11114480B2 (en) 2013-03-15 2021-09-07 ActLight SA Photodetector
CN110164948B (zh) * 2019-06-13 2021-12-28 京东方科技集团股份有限公司 一种像素界定层、制作方法和显示面板
US11239270B2 (en) 2019-08-20 2022-02-01 Hoon Kim TFT photodetector integrated on display panel
US11735677B2 (en) * 2020-07-20 2023-08-22 ActLight SA Photodetectors and photodetector arrays
US12474453B2 (en) 2022-01-20 2025-11-18 ActLight SA Control techniques for photodetector systems
KR20240113104A (ko) 2023-01-13 2024-07-22 국립강릉원주대학교산학협력단 이종접합 구조체 및 이의 제조방법, 이를 포함하는 광검출기
US12598374B2 (en) 2023-09-27 2026-04-07 ActLight SA Techniques for minimizing power consumption in photodetector measurements

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Also Published As

Publication number Publication date
CN113841241B (zh) 2025-03-18
IL287244A (en) 2021-12-01
US20200373338A1 (en) 2020-11-26
US20210074748A1 (en) 2021-03-11
WO2020212303A1 (en) 2020-10-22
IL287244B1 (en) 2026-03-01
KR20220016821A (ko) 2022-02-10
JP2022528731A (ja) 2022-06-15
EP3956928A1 (en) 2022-02-23
US11587960B2 (en) 2023-02-21
CN113841241A (zh) 2021-12-24
KR102613380B1 (ko) 2023-12-12
US11114480B2 (en) 2021-09-07

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