KR102613380B1 - 광검출기 - Google Patents

광검출기 Download PDF

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Publication number
KR102613380B1
KR102613380B1 KR1020217037497A KR20217037497A KR102613380B1 KR 102613380 B1 KR102613380 B1 KR 102613380B1 KR 1020217037497 A KR1020217037497 A KR 1020217037497A KR 20217037497 A KR20217037497 A KR 20217037497A KR 102613380 B1 KR102613380 B1 KR 102613380B1
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light absorbing
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Korean (ko)
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KR20220016821A (ko
Inventor
세르게이 오크호닌
맥심 구리브
데니스 살린
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액트라이트 에스 에이
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Priority claimed from US16/387,011 external-priority patent/US10964837B2/en
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    • H01L27/14647—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H01L27/14652—
    • H01L27/14683—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H10F39/1847—Multispectral infrared image sensors having a stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

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  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
KR1020217037497A 2019-04-17 2020-04-14 광검출기 Active KR102613380B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US16/387,011 US10964837B2 (en) 2013-03-15 2019-04-17 Photo detector systems and methods of operating same
US16/387,011 2019-04-17
US16/429,158 2019-06-03
US16/429,158 US11114480B2 (en) 2013-03-15 2019-06-03 Photodetector
PCT/EP2020/060382 WO2020212303A1 (en) 2019-04-17 2020-04-14 Photodetector

Publications (2)

Publication Number Publication Date
KR20220016821A KR20220016821A (ko) 2022-02-10
KR102613380B1 true KR102613380B1 (ko) 2023-12-12

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217037497A Active KR102613380B1 (ko) 2019-04-17 2020-04-14 광검출기

Country Status (7)

Country Link
US (2) US11114480B2 (https=)
EP (1) EP3956928A1 (https=)
JP (1) JP7651472B2 (https=)
KR (1) KR102613380B1 (https=)
CN (1) CN113841241B (https=)
IL (1) IL287244B1 (https=)
WO (1) WO2020212303A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240113104A (ko) 2023-01-13 2024-07-22 국립강릉원주대학교산학협력단 이종접합 구조체 및 이의 제조방법, 이를 포함하는 광검출기

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11837669B2 (en) 2013-03-15 2023-12-05 ActLight SA Photo detector systems and methods of operating same
US11114480B2 (en) 2013-03-15 2021-09-07 ActLight SA Photodetector
CN110164948B (zh) * 2019-06-13 2021-12-28 京东方科技集团股份有限公司 一种像素界定层、制作方法和显示面板
US11239270B2 (en) 2019-08-20 2022-02-01 Hoon Kim TFT photodetector integrated on display panel
US11735677B2 (en) * 2020-07-20 2023-08-22 ActLight SA Photodetectors and photodetector arrays
US12474453B2 (en) 2022-01-20 2025-11-18 ActLight SA Control techniques for photodetector systems
US12598374B2 (en) 2023-09-27 2026-04-07 ActLight SA Techniques for minimizing power consumption in photodetector measurements

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180247968A1 (en) * 2015-11-06 2018-08-30 Artilux Corporation High-speed light sensing apparatus iii

Family Cites Families (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2396419A1 (fr) * 1977-06-27 1979-01-26 Thomson Csf Diode capable de fonctionner en emetteur et detecteur de lumiere de la meme longueur d'onde alternativement
US4484210A (en) 1980-09-05 1984-11-20 Nippon Electric Co., Ltd. Solid-state imaging device having a reduced image lag
US4833346A (en) * 1985-08-22 1989-05-23 International Business Machines Corporation Switched threshold comparator for a fiber-optic receiver
JPH05110056A (ja) * 1991-10-15 1993-04-30 Fuji Xerox Co Ltd イメージセンサ
JPH07142761A (ja) * 1993-11-18 1995-06-02 Mitsubishi Electric Corp 受光素子ならびに受光素子アレイおよび画像検出装置ならびに画像検出方法
WO1995015583A1 (en) * 1993-12-03 1995-06-08 Interuniversitair Micro-Elektronica Centrum Vzw Fast electrical complete turn-off optical device
JPH07302928A (ja) * 1994-05-09 1995-11-14 Mitsubishi Electric Corp 半導体受光素子ならびに半導体受光素子アレイおよび画像処理装置ならびに画像処理方法
US6359293B1 (en) * 1999-08-17 2002-03-19 Agere Systems Guardian Corp. Integrated optoelectronic device with an avalanche photodetector and method of making the same using commercial CMOS processes
US6992698B1 (en) * 1999-08-31 2006-01-31 Micron Technology, Inc. Integrated field emission array sensor, display, and transmitter, and apparatus including same
US6906793B2 (en) 2000-12-11 2005-06-14 Canesta, Inc. Methods and devices for charge management for three-dimensional sensing
US6642503B2 (en) * 2001-06-13 2003-11-04 Texas Instruments Incorporated Time domain sensing technique and system architecture for image sensor
US7386207B2 (en) * 2001-12-27 2008-06-10 Kotura, Inc. In-line light sensor
JP2003244074A (ja) 2002-02-20 2003-08-29 Ntt Electornics Corp 光受信器
CN100435343C (zh) * 2002-06-27 2008-11-19 佳能株式会社 固体摄象装置和用固体摄象装置的摄象机系统
US6808957B1 (en) * 2003-07-31 2004-10-26 Chunghwa Telecom Co., Ltd. Method for improving a high-speed edge-coupled photodetector
WO2005078801A1 (en) 2004-02-17 2005-08-25 Nanyang Technological University Method and device for wavelength-sensitive photo-sensing
JP4280822B2 (ja) 2004-02-18 2009-06-17 国立大学法人静岡大学 光飛行時間型距離センサ
JP4345693B2 (ja) 2004-03-17 2009-10-14 パナソニック電工株式会社 光検出素子および光検出素子の制御方法
US9117726B2 (en) 2006-03-19 2015-08-25 Shimon Maimon Application of reduced dark current photodetector
GB2451202B (en) * 2006-03-21 2011-12-21 Shimon Maimon Reduced dark current photodetector
US7560784B2 (en) 2007-02-01 2009-07-14 International Business Machines Corporation Fin PIN diode
US7651883B2 (en) 2007-05-09 2010-01-26 Sharp Laboratories Of America, Inc. High energy implant photodiode stack
KR100879013B1 (ko) 2007-05-22 2009-01-19 (주)실리콘화일 매립형 컬렉터를 구비하는 포토트랜지스터
KR20100098658A (ko) * 2007-12-25 2010-09-08 세이코 인스트루 가부시키가이샤 광 검출 장치, 및 화상 표시 장치
JP2011192966A (ja) * 2010-02-17 2011-09-29 Sony Corp 光電変換素子、光電変換装置及び固体撮像装置
US8519379B2 (en) 2009-12-08 2013-08-27 Zena Technologies, Inc. Nanowire structured photodiode with a surrounding epitaxially grown P or N layer
US8274096B2 (en) 2009-02-13 2012-09-25 University Of Rochester Semiconductor device and method
US8953149B2 (en) 2009-02-17 2015-02-10 Microsoft Corporation CMOS three-dimensional image sensor detectors having reduced inter-gate capacitance, and enhanced modulation contrast
IT1393781B1 (it) 2009-04-23 2012-05-08 St Microelectronics Rousset Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile ad effetto jfet, schiera di fotodiodi e relativo procedimento di fabbricazione
WO2010134993A1 (en) 2009-05-18 2010-11-25 Sarnoff Corporation Slab scintillator with integrated double-sided photoreceiver
JP2011007622A (ja) 2009-06-25 2011-01-13 Sharp Corp センサ装置、携帯電話およびデジタルカメラ
US8319262B2 (en) 2009-07-31 2012-11-27 Sri International Substrate bias for CMOS imagers
US8487357B2 (en) * 2010-03-12 2013-07-16 Unisantis Electronics Singapore Pte Ltd. Solid state imaging device having high sensitivity and high pixel density
IT1399075B1 (it) 2010-03-23 2013-04-05 St Microelectronics Srl Metodo di rilevazione di posizioni di fotoni che impingono su un fotodiodo a valanga geiger-mode, relativi fotodiodi a valanga geiger-mode e processo di fabbricazione
CN101969074B (zh) * 2010-10-28 2012-07-04 电子科技大学 一种高压ldmos器件
EP2466649A1 (en) * 2010-12-16 2012-06-20 Alcatel Lucent A double-collector uni-travelling-carrier photodiode
US9735304B1 (en) 2013-03-15 2017-08-15 Actlight, S.A. Photo detector systems and methods of operating same
US9431566B2 (en) 2011-06-10 2016-08-30 ActLight S.A. Photo detector and methods of manufacturing and operating same
US9012960B2 (en) 2011-06-10 2015-04-21 Actlight, S.A. Photo detector and methods of manufacturing and operating same
US9236520B2 (en) 2011-06-10 2016-01-12 ActLight S.A. Proximity sensor systems and methods of operating same
EP2549536B1 (de) * 2011-07-22 2020-08-19 Espros Photonics AG Halbleiterstruktur zur Photonendetektion
US8866064B2 (en) 2011-07-26 2014-10-21 Avago Technologies General Ip (Singapore) Pte. Ltd. Multi-directional proximity sensor
US8569806B2 (en) 2011-09-02 2013-10-29 Hoon Kim Unit pixel of image sensor and photo detector thereof
US8536617B2 (en) 2011-12-16 2013-09-17 General Electric Company Optically triggered semiconductor device and method for making the same
CN103384916A (zh) 2012-02-20 2013-11-06 新加坡优尼山帝斯电子私人有限公司 固体摄像器件
CN103515465B (zh) * 2012-06-29 2016-03-30 英飞凌科技股份有限公司 光电探测器及其制造方法
US9142692B2 (en) 2012-07-23 2015-09-22 Bae Systems Information And Electronic Systems Integration Inc. Thyristor-based, dual-polarity blocking photo-conductive semiconductor switch (PCSS) for short pulse switching and methods
US10269855B2 (en) 2013-03-15 2019-04-23 ActLight SA Photo detector systems and methods of operating same
US11114480B2 (en) 2013-03-15 2021-09-07 ActLight SA Photodetector
US10964837B2 (en) 2013-03-15 2021-03-30 ActLight SA Photo detector systems and methods of operating same
EP3341970B1 (en) * 2015-08-27 2020-10-07 Artilux Inc. Wide spectrum optical sensor
US10872987B2 (en) 2015-12-10 2020-12-22 California Institute Of Technology Enhanced quantum efficiency barrier infrared detectors
ITUA20164571A1 (it) 2016-06-21 2017-12-21 St Microelectronics Srl Dispositivo optoelettronico multibanda per applicazioni colorimetriche e relativo metodo di fabbricazione
US10504952B2 (en) 2017-08-30 2019-12-10 Taiwan Semiconductor Manufacturing Co., Ltd. Increased optical path for long wavelength light by grating structure
FR3089684A1 (fr) 2018-12-07 2020-06-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Photodiode de type SPAD
US11251217B2 (en) 2019-04-17 2022-02-15 ActLight SA Photodetector sensor arrays

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180247968A1 (en) * 2015-11-06 2018-08-30 Artilux Corporation High-speed light sensing apparatus iii

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240113104A (ko) 2023-01-13 2024-07-22 국립강릉원주대학교산학협력단 이종접합 구조체 및 이의 제조방법, 이를 포함하는 광검출기

Also Published As

Publication number Publication date
CN113841241B (zh) 2025-03-18
IL287244A (en) 2021-12-01
US20200373338A1 (en) 2020-11-26
US20210074748A1 (en) 2021-03-11
JP7651472B2 (ja) 2025-03-26
WO2020212303A1 (en) 2020-10-22
IL287244B1 (en) 2026-03-01
KR20220016821A (ko) 2022-02-10
JP2022528731A (ja) 2022-06-15
EP3956928A1 (en) 2022-02-23
US11587960B2 (en) 2023-02-21
CN113841241A (zh) 2021-12-24
US11114480B2 (en) 2021-09-07

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