IL287244B1 - Photodetector - Google Patents

Photodetector

Info

Publication number
IL287244B1
IL287244B1 IL287244A IL28724421A IL287244B1 IL 287244 B1 IL287244 B1 IL 287244B1 IL 287244 A IL287244 A IL 287244A IL 28724421 A IL28724421 A IL 28724421A IL 287244 B1 IL287244 B1 IL 287244B1
Authority
IL
Israel
Prior art keywords
photodetector
Prior art date
Application number
IL287244A
Other languages
English (en)
Hebrew (he)
Other versions
IL287244A (en
Original Assignee
Actlight S A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US16/387,011 external-priority patent/US10964837B2/en
Application filed by Actlight S A filed Critical Actlight S A
Publication of IL287244A publication Critical patent/IL287244A/en
Publication of IL287244B1 publication Critical patent/IL287244B1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H10F39/1847—Multispectral infrared image sensors having a stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
IL287244A 2019-04-17 2021-10-13 Photodetector IL287244B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/387,011 US10964837B2 (en) 2013-03-15 2019-04-17 Photo detector systems and methods of operating same
US16/429,158 US11114480B2 (en) 2013-03-15 2019-06-03 Photodetector
PCT/EP2020/060382 WO2020212303A1 (en) 2019-04-17 2020-04-14 Photodetector

Publications (2)

Publication Number Publication Date
IL287244A IL287244A (en) 2021-12-01
IL287244B1 true IL287244B1 (en) 2026-03-01

Family

ID=72837080

Family Applications (1)

Application Number Title Priority Date Filing Date
IL287244A IL287244B1 (en) 2019-04-17 2021-10-13 Photodetector

Country Status (7)

Country Link
US (2) US11114480B2 (https=)
EP (1) EP3956928A1 (https=)
JP (1) JP7651472B2 (https=)
KR (1) KR102613380B1 (https=)
CN (1) CN113841241B (https=)
IL (1) IL287244B1 (https=)
WO (1) WO2020212303A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11837669B2 (en) 2013-03-15 2023-12-05 ActLight SA Photo detector systems and methods of operating same
US11114480B2 (en) 2013-03-15 2021-09-07 ActLight SA Photodetector
CN110164948B (zh) * 2019-06-13 2021-12-28 京东方科技集团股份有限公司 一种像素界定层、制作方法和显示面板
US11239270B2 (en) 2019-08-20 2022-02-01 Hoon Kim TFT photodetector integrated on display panel
US11735677B2 (en) * 2020-07-20 2023-08-22 ActLight SA Photodetectors and photodetector arrays
US12474453B2 (en) 2022-01-20 2025-11-18 ActLight SA Control techniques for photodetector systems
KR20240113104A (ko) 2023-01-13 2024-07-22 국립강릉원주대학교산학협력단 이종접합 구조체 및 이의 제조방법, 이를 포함하는 광검출기
US12598374B2 (en) 2023-09-27 2026-04-07 ActLight SA Techniques for minimizing power consumption in photodetector measurements

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US20190067357A1 (en) * 2017-08-30 2019-02-28 Taiwan Semiconductor Manufacturing Co., Ltd. Increased optical path for long wavelength light by grating structure

Also Published As

Publication number Publication date
CN113841241B (zh) 2025-03-18
IL287244A (en) 2021-12-01
US20200373338A1 (en) 2020-11-26
US20210074748A1 (en) 2021-03-11
JP7651472B2 (ja) 2025-03-26
WO2020212303A1 (en) 2020-10-22
KR20220016821A (ko) 2022-02-10
JP2022528731A (ja) 2022-06-15
EP3956928A1 (en) 2022-02-23
US11587960B2 (en) 2023-02-21
CN113841241A (zh) 2021-12-24
KR102613380B1 (ko) 2023-12-12
US11114480B2 (en) 2021-09-07

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