JP7635834B2 - 受動電子部品用の支持基板、受動電子部品、半導体装置、マッチング回路及びフィルタ回路 - Google Patents
受動電子部品用の支持基板、受動電子部品、半導体装置、マッチング回路及びフィルタ回路 Download PDFInfo
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- JP7635834B2 JP7635834B2 JP2023521006A JP2023521006A JP7635834B2 JP 7635834 B2 JP7635834 B2 JP 7635834B2 JP 2023521006 A JP2023521006 A JP 2023521006A JP 2023521006 A JP2023521006 A JP 2023521006A JP 7635834 B2 JP7635834 B2 JP 7635834B2
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/38—Impedance-matching networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02125—Means for compensation or elimination of undesirable effects of parasitic elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02952—Means for compensation or elimination of undesirable effects of parasitic capacitance
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021079850 | 2021-05-10 | ||
| JP2021079850 | 2021-05-10 | ||
| PCT/JP2022/019621 WO2022239719A1 (ja) | 2021-05-10 | 2022-05-09 | 受動電子部品用の支持基板、受動電子部品、半導体装置、マッチング回路及びフィルタ回路 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022239719A1 JPWO2022239719A1 (https=) | 2022-11-17 |
| JPWO2022239719A5 JPWO2022239719A5 (https=) | 2024-02-13 |
| JP7635834B2 true JP7635834B2 (ja) | 2025-02-26 |
Family
ID=84029622
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023521006A Active JP7635834B2 (ja) | 2021-05-10 | 2022-05-09 | 受動電子部品用の支持基板、受動電子部品、半導体装置、マッチング回路及びフィルタ回路 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20240063224A1 (https=) |
| JP (1) | JP7635834B2 (https=) |
| CN (1) | CN117397030A (https=) |
| WO (1) | WO2022239719A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2024252872A1 (https=) * | 2023-06-07 | 2024-12-12 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002530868A (ja) | 1998-11-13 | 2002-09-17 | テレフオンアクチーボラゲツト エル エム エリクソン（パブル） | ポリシリコンレジスタおよびそれを生産する方法 |
| JP2007258713A (ja) | 2006-03-17 | 2007-10-04 | Sychip Inc | 集積受動デバイス基板 |
| JP2020170782A (ja) | 2019-04-03 | 2020-10-15 | 株式会社村田製作所 | キャパシタ |
| JP2020188091A (ja) | 2019-05-13 | 2020-11-19 | 株式会社村田製作所 | キャパシタ |
-
2022
- 2022-05-09 JP JP2023521006A patent/JP7635834B2/ja active Active
- 2022-05-09 WO PCT/JP2022/019621 patent/WO2022239719A1/ja not_active Ceased
- 2022-05-09 CN CN202280033513.5A patent/CN117397030A/zh active Pending
-
2023
- 2023-10-30 US US18/497,020 patent/US20240063224A1/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002530868A (ja) | 1998-11-13 | 2002-09-17 | テレフオンアクチーボラゲツト エル エム エリクソン（パブル） | ポリシリコンレジスタおよびそれを生産する方法 |
| JP2007258713A (ja) | 2006-03-17 | 2007-10-04 | Sychip Inc | 集積受動デバイス基板 |
| JP2020170782A (ja) | 2019-04-03 | 2020-10-15 | 株式会社村田製作所 | キャパシタ |
| JP2020188091A (ja) | 2019-05-13 | 2020-11-19 | 株式会社村田製作所 | キャパシタ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2022239719A1 (https=) | 2022-11-17 |
| US20240063224A1 (en) | 2024-02-22 |
| CN117397030A (zh) | 2024-01-12 |
| WO2022239719A1 (ja) | 2022-11-17 |
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