JP2007258713A - 集積受動デバイス基板 - Google Patents
集積受動デバイス基板 Download PDFInfo
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- JP2007258713A JP2007258713A JP2007067731A JP2007067731A JP2007258713A JP 2007258713 A JP2007258713 A JP 2007258713A JP 2007067731 A JP2007067731 A JP 2007067731A JP 2007067731 A JP2007067731 A JP 2007067731A JP 2007258713 A JP2007258713 A JP 2007258713A
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
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- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/13—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body combined with thin-film or thick-film passive components
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- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/10—Inductors
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05571—Disposition the external layer being disposed in a recess of the surface
- H01L2224/05572—Disposition the external layer being disposed in a recess of the surface the external layer extending out of an opening
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
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- H01L2924/19011—Structure including integrated passive components
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- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19102—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device
- H01L2924/19103—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device interposed between the semiconductor or solid-state device and the die mounting substrate, i.e. chip-on-passive
Abstract
【解決手段】シリコン表面にトラップ用中心を作ることによって、シリコン/酸化物界面における好ましくない蓄積電荷が不動にされる。トラップ用中心は、シリコン基板と酸化物層との間に挿入される多結晶シリコン層によって製造される。
【選択図】図1
Description
a.真性導電率(intrinsic conductivity)を有し、複数のIPDサイトを有するシリコンウェハ基板を設ける工程と、
b.該シリコンウェハ基板上に多結晶シリコン層を形成する工程と、
c.該多結晶シリコン層上に絶縁層を形成する工程と、
d.前記IPDサイト上に少なくとも1つの薄膜受動デバイスを形成する工程と
を含む、IPDを製造する方法である。
シリコンウェハ基板の抵抗率は、0.1キロオームcmより大きいのは、好ましい。多結晶シリコン層の抵抗率は、0.1キロオームcmより大きいのは好ましい。多結晶シリコン層の厚さは、0.1μmより厚いのは好ましい。多結晶シリコン層は、CVDを使用して前記シリコンウェハ上に蒸着されるのは好ましい。
シリコンウェハ基板の抵抗率は、1.0キロオームcmより大きいのは好ましい。
単結晶シリコンウェハの直径は、少なくとも191mm(8インチ)であるのは好ましい。
薄膜受動デバイスは、1つ又は複数の誘導子を備えるのは好ましい。
また、本発明は集積受動デバイス(IPD)であって、
a.真性導電率を有し、複数のIPDサイトを有するシリコンウェハ基板と、
b.該シリコンウェハ基板上の多結晶シリコン層と、
c.該多結晶シリコン層上の絶縁層と、
d.前記IPDサイト上の少なくとも1つの薄膜受動デバイスとを備えるIPDである。
シリコンウェハ基板の抵抗率は、0.1キロオームcmより大きいのは好ましい。多結晶シリコン層の抵抗率は、0.1キロオームcmより大きいのは好ましい。多結晶シリコン層の厚さは、0.1μmより厚いのは好ましい。
シリコンウェハ基板の抵抗率は、1.0キロオームcmより大きいのは好ましい。
単結晶シリコンウェハの直径は、少なくとも191mm(8インチ)であるのは好ましい。
薄膜受動デバイスは、1つ又は複数の誘導子を備えるのは好ましい。
複数の誘導子及び複数の受動抵抗及び/又はコンデンサデバイスを備えるのは好ましい。
さらに本発明は、平面シリコンウェハと、該ウェハ上の多結晶シリコンの平面層と、該多結晶シリコン層上の絶縁層とを備える基板である。
改良された基板は、真性シリコン基板と表面酸化物との間に追加された多結晶シリコン層を有する。当該技術分野で知られているように、典型的なシリコン基板は、少なくとも低濃度でドープされている。市販のシリコン材料によれば、標準的なシリコンウェハは、約5〜30オームcmの抵抗率を有するであろう。本発明に関して、真性シリコン材料への言及は、500オームcmより大きい、好ましくは、1000オームcmより大きい抵抗率を有するシリコンを意味することが意図される。4000オームcm以上の抵抗率の値もまた考えられる。表面酸化物は、好ましくは、二酸化シリコンであるが、酸化タンタル、酸化チタン等のような他の酸化物が使用されてもよい。多結晶シリコン層は、多結晶シリコン層内に多数の結晶欠陥があるために、高密度の安定した電荷キャリアトラップを含む。Si/SiO2界面で蓄積する電荷は、これらのトラップによって、可動電荷から固定電荷に変換される。
Claims (17)
- 集積受動デバイス(IPD)を製造するための方法であって、
a.真性導電率(intrinsic conductivity)を有し、複数のIPDサイトを有するシリコンウェハ基板を設ける工程と、
b.該シリコンウェハ基板上に多結晶シリコン層を形成する工程と、
c.該多結晶シリコン層上に絶縁層を形成する工程と、
d.前記IPDサイト上に少なくとも1つの薄膜受動デバイスを形成する工程と
を含む、IPDを製造する方法。 - 前記シリコンウェハ基板の抵抗率は、0.1キロオームcmより大きい、請求項1に記載のIPDを製造する方法。
- 前記多結晶シリコン層の抵抗率は、0.1キロオームcmより大きい、請求項1に記載のIPDを製造する方法。
- 前記多結晶シリコン層の厚さは、0.1μmより厚い、請求項3に記載のIPDを製造する方法。
- 前記多結晶シリコン層は、CVDを使用して前記シリコンウェハ上に蒸着される、請求項4に記載のIPDを製造する方法。
- 前記シリコンウェハ基板の抵抗率は、1.0キロオームcmより大きい、請求項1に記載のIPDを製造する方法。
- 前記単結晶シリコンウェハの直径は、少なくとも191mm(8インチ)である、請求項3に記載のIPDを製造する方法。
- 前記薄膜受動デバイスは、1つ又は複数の誘導子を備える、請求項1に記載のIPDを製造する方法。
- 集積受動デバイス(IPD)であって、
a.真性導電率を有し、複数のIPDサイトを有するシリコンウェハ基板と、
b.該シリコンウェハ基板上の多結晶シリコン層と、
c.該多結晶シリコン層上の絶縁層と、
d.前記IPDサイト上の少なくとも1つの薄膜受動デバイスとを備えるIPD。 - 前記シリコンウェハ基板の抵抗率は、0.1キロオームcmより大きい、請求項9に記載のIPD。
- 前記多結晶シリコン層の抵抗率は、0.1キロオームcmより大きい、請求項10に記載のIPD。
- 前記多結晶シリコン層の厚さは、0.1μmより厚い、請求項11に記載のIPD。
- 前記シリコンウェハ基板の抵抗率は、1.0キロオームcmより大きい、請求項9に記載のIPD。
- 前記単結晶シリコンウェハの直径は、少なくとも191mm(8インチ)である、請求項9に記載のIPD。
- 前記薄膜受動デバイスは、1つ又は複数の誘導子を備える、請求項9に記載のIPD。
- 複数の誘導子及び複数の受動抵抗及び/又はコンデンサデバイスを備える、請求項9に記載のIPD。
- 平面シリコンウェハと、該ウェハ上の多結晶シリコンの平面層と、該多結晶シリコン層上の絶縁層とを備える基板。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/378,106 US7936043B2 (en) | 2006-03-17 | 2006-03-17 | Integrated passive device substrates |
Publications (1)
Publication Number | Publication Date |
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JP2007258713A true JP2007258713A (ja) | 2007-10-04 |
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ID=38078375
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JP2007067731A Pending JP2007258713A (ja) | 2006-03-17 | 2007-03-16 | 集積受動デバイス基板 |
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---|---|
US (1) | US7936043B2 (ja) |
EP (1) | EP1835536A3 (ja) |
JP (1) | JP2007258713A (ja) |
CN (1) | CN101118880B (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009120407A2 (en) * | 2008-03-24 | 2009-10-01 | Freescale Semiconductor Inc. | Integrated passive device and method with low cost substrate |
JP2016541118A (ja) * | 2013-11-26 | 2016-12-28 | オクメティック オーユーイー | 高周波集積パッシブデバイス用の高周波損失を低下させた高抵抗シリコン基材 |
US20210384070A1 (en) * | 2014-11-18 | 2021-12-09 | Globalwafers Co., Ltd. | High resistivity semiconductor-on-insulator wafer and a method of manufacture |
WO2022239719A1 (ja) * | 2021-05-10 | 2022-11-17 | 株式会社村田製作所 | 受動電子部品用の支持基板、受動電子部品、半導体装置、マッチング回路及びフィルタ回路 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7935607B2 (en) * | 2007-04-09 | 2011-05-03 | Freescale Semiconductor, Inc. | Integrated passive device with a high resistivity substrate and method for forming the same |
US7868419B1 (en) * | 2007-10-18 | 2011-01-11 | Rf Micro Devices, Inc. | Linearity improvements of semiconductor substrate based radio frequency devices |
US8344503B2 (en) | 2008-11-25 | 2013-01-01 | Freescale Semiconductor, Inc. | 3-D circuits with integrated passive devices |
CN101834156A (zh) * | 2010-05-12 | 2010-09-15 | 上海宏力半导体制造有限公司 | 一种提高电感器衬底电阻的方法 |
JP6024400B2 (ja) * | 2012-11-07 | 2016-11-16 | ソニー株式会社 | 半導体装置、半導体装置の製造方法、及びアンテナスイッチモジュール |
FR3021807B1 (fr) * | 2014-05-27 | 2017-09-29 | Commissariat A L Energie Atomique Et Aux Energies Alternatives | Matrice de photodiodes mesa a ftm amelioree |
CN105226045B (zh) | 2014-05-30 | 2018-07-27 | 日月光半导体制造股份有限公司 | 半导体装置及其制造方法 |
CN106876378A (zh) * | 2017-01-24 | 2017-06-20 | 中国电子科技集团公司第五十五研究所 | 一种多层薄膜集成无源器件及其制造方法 |
CN111968995B (zh) * | 2020-07-13 | 2024-02-09 | 深圳市汇芯通信技术有限公司 | 一种集成无源器件及其制作方法和集成电路 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6154651A (ja) * | 1984-07-30 | 1986-03-18 | ゼネラル・エレクトリツク・カンパニイ | 低損失の多レベルのシリコン回路板 |
JPH08316420A (ja) * | 1995-05-23 | 1996-11-29 | Hitachi Ltd | 半導体装置 |
JPH10284694A (ja) * | 1997-04-03 | 1998-10-23 | Lucent Technol Inc | 無線周波数以上で動作する電子回路をサポートするシリコン製基板を有する物品 |
JP2000068714A (ja) * | 1998-08-19 | 2000-03-03 | Sharp Corp | ミリ波用整合回路および通信モジュール |
JP2005093828A (ja) * | 2003-09-18 | 2005-04-07 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置および製造方法 |
JP2005317979A (ja) * | 2004-04-29 | 2005-11-10 | Sychip Inc | 集積受動デバイス |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5559349A (en) * | 1995-03-07 | 1996-09-24 | Northrop Grumman Corporation | Silicon integrated circuit with passive devices over high resistivity silicon substrate portion, and active devices formed in lower resistivity silicon layer over the substrate |
US6075691A (en) | 1997-03-06 | 2000-06-13 | Lucent Technologies Inc. | Thin film capacitors and process for making them |
US6005197A (en) | 1997-08-25 | 1999-12-21 | Lucent Technologies Inc. | Embedded thin film passive components |
JP4005762B2 (ja) * | 1999-06-30 | 2007-11-14 | 株式会社東芝 | 集積回路装置及びその製造方法 |
CN100446196C (zh) * | 2001-06-22 | 2008-12-24 | Memc电子材料有限公司 | 通过离子注入产生具有本征吸除的绝缘体衬底硅结构的方法 |
JP2003188268A (ja) * | 2001-12-21 | 2003-07-04 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US7154974B2 (en) * | 2002-02-12 | 2006-12-26 | Broadcom Corporation | Data recovery system and applications thereof in radio receivers |
US6777774B2 (en) * | 2002-04-17 | 2004-08-17 | Chartered Semiconductor Manufacturing Limited | Low noise inductor using electrically floating high resistive and grounded low resistive patterned shield |
JP4016340B2 (ja) * | 2003-06-13 | 2007-12-05 | ソニー株式会社 | 半導体装置及びその実装構造、並びにその製造方法 |
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2006
- 2006-03-17 US US11/378,106 patent/US7936043B2/en not_active Expired - Fee Related
-
2007
- 2007-03-09 EP EP07250982A patent/EP1835536A3/en not_active Withdrawn
- 2007-03-16 JP JP2007067731A patent/JP2007258713A/ja active Pending
- 2007-03-16 CN CN2007100857895A patent/CN101118880B/zh not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6154651A (ja) * | 1984-07-30 | 1986-03-18 | ゼネラル・エレクトリツク・カンパニイ | 低損失の多レベルのシリコン回路板 |
JPH08316420A (ja) * | 1995-05-23 | 1996-11-29 | Hitachi Ltd | 半導体装置 |
JPH10284694A (ja) * | 1997-04-03 | 1998-10-23 | Lucent Technol Inc | 無線周波数以上で動作する電子回路をサポートするシリコン製基板を有する物品 |
JP2000068714A (ja) * | 1998-08-19 | 2000-03-03 | Sharp Corp | ミリ波用整合回路および通信モジュール |
JP2005093828A (ja) * | 2003-09-18 | 2005-04-07 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置および製造方法 |
JP2005317979A (ja) * | 2004-04-29 | 2005-11-10 | Sychip Inc | 集積受動デバイス |
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WO2009120407A2 (en) * | 2008-03-24 | 2009-10-01 | Freescale Semiconductor Inc. | Integrated passive device and method with low cost substrate |
WO2009120407A3 (en) * | 2008-03-24 | 2009-11-19 | Freescale Semiconductor Inc. | Integrated passive device and method with low cost substrate |
JP2016541118A (ja) * | 2013-11-26 | 2016-12-28 | オクメティック オーユーイー | 高周波集積パッシブデバイス用の高周波損失を低下させた高抵抗シリコン基材 |
US20210384070A1 (en) * | 2014-11-18 | 2021-12-09 | Globalwafers Co., Ltd. | High resistivity semiconductor-on-insulator wafer and a method of manufacture |
US11699615B2 (en) * | 2014-11-18 | 2023-07-11 | Globalwafers Co., Ltd. | High resistivity semiconductor-on-insulator wafer and a method of manufacture |
WO2022239719A1 (ja) * | 2021-05-10 | 2022-11-17 | 株式会社村田製作所 | 受動電子部品用の支持基板、受動電子部品、半導体装置、マッチング回路及びフィルタ回路 |
Also Published As
Publication number | Publication date |
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CN101118880A (zh) | 2008-02-06 |
US20070215976A1 (en) | 2007-09-20 |
EP1835536A3 (en) | 2010-07-14 |
CN101118880B (zh) | 2010-12-22 |
US7936043B2 (en) | 2011-05-03 |
EP1835536A2 (en) | 2007-09-19 |
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