JP2005317979A - 集積受動デバイス - Google Patents
集積受動デバイス Download PDFInfo
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- JP2005317979A JP2005317979A JP2005131277A JP2005131277A JP2005317979A JP 2005317979 A JP2005317979 A JP 2005317979A JP 2005131277 A JP2005131277 A JP 2005131277A JP 2005131277 A JP2005131277 A JP 2005131277A JP 2005317979 A JP2005317979 A JP 2005317979A
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- polycrystalline silicon
- wafer
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- ipd
- single crystal
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 75
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 238000000034 method Methods 0.000 claims abstract description 40
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 claims abstract description 22
- 239000013078 crystal Substances 0.000 claims abstract description 15
- 239000010409 thin film Substances 0.000 claims description 17
- 239000003990 capacitor Substances 0.000 claims description 8
- 238000005498 polishing Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052710 silicon Inorganic materials 0.000 abstract description 11
- 239000010703 silicon Substances 0.000 abstract description 11
- 229920005591 polysilicon Polymers 0.000 abstract 3
- 235000012431 wafers Nutrition 0.000 description 76
- 238000005516 engineering process Methods 0.000 description 14
- 239000002131 composite material Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000012545 processing Methods 0.000 description 5
- 239000000047 product Substances 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000011982 device technology Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 238000007790 scraping Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 208000024875 Infantile dystonia-parkinsonism Diseases 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000012770 industrial material Substances 0.000 description 1
- 208000001543 infantile parkinsonism-dystonia Diseases 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 150000003071 polychlorinated biphenyls Chemical class 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
- H01L27/016—Thin-film circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/10—Inductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
- Weting (AREA)
Abstract
【解決手段】 本明細書には、多結晶シリコン基板に形成される集積受動デバイス(IPD)が記述されている。IPDを製造するための方法が開示されており、単結晶ハンドル・ウェハから始まって、開始ウェハの一方の面もしくは両面への分厚い多結晶シリコン基板層の蒸着、複数の多結晶シリコン基板層のうちの1つへのIPDの形成およびハンドル・ウェハの除去によって多結晶シリコン基板が製造される。好ましい実施形態では、単結晶シリコン・ハンドル・ウェハは、単結晶シリコン・ウェハ製造ラインから廃棄されるシリコン・ウェハである。
【選択図】図5
Description
現況技術における無線周波数(RF)電気回路には、大量の受動デバイスが使用されている。これらの回路の多くは、ハンド・ヘルド無線製品に使用されており、したがってRFデバイス技術においては、受動デバイスおよび受動デバイス回路の小型化が重要な目標である。
当業者には、本発明に対する様々な追加改変が可能であろう。技術が進歩を遂げた原理およびそれらの等価物を基本的に利用している本明細書の特定の教示からのすべての逸脱は、上で説明した本発明および特許請求の範囲の各請求項の範囲内として正当に見なされる。
Claims (22)
- 集積受動デバイス(IPD)を製造するための方法であって、
a.複数のIPDサイトを有する多結晶シリコン・ウェハ基板を提供する工程と、
b.前記IPDサイトに少なくとも1つの薄膜受動デバイスを形成する工程と
を含む方法。 - 前記多結晶シリコン・ウェハ基板の抵抗率が0.1キロオームcmより大きい、請求項1に記載の方法。
- 前記多結晶シリコン・ウェハ基板が、単結晶シリコン・ウェハ上に多結晶シリコン基板層を備えた、請求項1に記載の方法。
- 前記多結晶シリコン・ウェハ基板が、間に単結晶ウェハを備えた2つの多結晶シリコン層を備えた、請求項1に記載の方法。
- 前記多結晶シリコン基板層の厚さが75ミクロンより厚い、請求項3に記載の方法。
- 前記多結晶シリコン基板層が前記単結晶シリコン・ウェハ上に蒸着された、請求項3に記載の方法。
- 前記多結晶シリコン基板層がCVDを使用して前記単結晶シリコン・ウェハ上に蒸着された、請求項6に記載の方法。
- 前記単結晶シリコン・ウェハが拒絶ウェハである、請求項3に記載の方法。
- 前記単結晶シリコン・ウェハの直径が少なくとも8インチである、請求項8に記載の方法。
- 前記IPDの頂部に能動ICチップを実装する工程をさらに含む、請求項1に記載の方法。
- 前記薄膜受動デバイスが1つまたは複数の誘導子を備えた、請求項1に記載の方法。
- 工程bに続いて前記単結晶シリコン・ウェハが除去される、請求項3に記載の方法。
- 前記単結晶シリコン・ウェハが化学機械研磨によって除去される、請求項12に記載の方法。
- 多結晶シリコン基板と、
前記多結晶シリコン基板上の少なくとも1つの薄膜受動デバイスとを備えた集積受動デバイス(IPD)。 - 前記多結晶シリコン基板の抵抗率が0.1キロオームcmより大きい、請求項14に記載のデバイス。
- 前記多結晶シリコン基板の厚さが75ミクロンより厚い、請求項14に記載のデバイス。
- 前記IPDが、複数の誘導子および複数の受動抵抗および/またはコンデンサ・デバイスを備えた、請求項14に記載のデバイス。
- 前記複数の誘導子が、前記多結晶シリコン基板の第1の部分に物理的にまとめてグループ化され、前記複数の受動抵抗および/またはコンデンサ・デバイスが、前記多結晶シリコン基板の第2の部分にまとめてグループ化された、請求項17に記載のデバイス。
- 前記IPD上に実装された能動ICチップをさらに備えた、請求項14に記載のデバイス。
- 前記多結晶シリコン基板の前記第2の部分に実装された能動ICチップをさらに備えた、請求項18に記載のデバイス。
- 平らな単結晶シリコン・ウェハを備え、かつ、前記ウェハの一方の面に平らな多結晶シリコン層を備えた基板。
- 平らな単結晶シリコン・ウェハを備え、前記ウェハの一方の面に平らな多結晶シリコン層を備え、かつ、前記ウェハのもう一方の面に平らな多結晶シリコン層を備えた基板。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/835,338 US7259077B2 (en) | 2004-04-29 | 2004-04-29 | Integrated passive devices |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2005317979A true JP2005317979A (ja) | 2005-11-10 |
Family
ID=34941067
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005131277A Pending JP2005317979A (ja) | 2004-04-29 | 2005-04-28 | 集積受動デバイス |
Country Status (6)
Country | Link |
---|---|
US (3) | US7259077B2 (ja) |
EP (1) | EP1592047A3 (ja) |
JP (1) | JP2005317979A (ja) |
KR (1) | KR20060047662A (ja) |
CN (1) | CN1776895B (ja) |
TW (1) | TW200625400A (ja) |
Cited By (1)
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JP2007258713A (ja) * | 2006-03-17 | 2007-10-04 | Sychip Inc | 集積受動デバイス基板 |
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US8791006B2 (en) * | 2005-10-29 | 2014-07-29 | Stats Chippac, Ltd. | Semiconductor device and method of forming an inductor on polymer matrix composite substrate |
US8158510B2 (en) | 2009-11-19 | 2012-04-17 | Stats Chippac, Ltd. | Semiconductor device and method of forming IPD on molded substrate |
US8669637B2 (en) * | 2005-10-29 | 2014-03-11 | Stats Chippac Ltd. | Integrated passive device system |
US7851257B2 (en) * | 2005-10-29 | 2010-12-14 | Stats Chippac Ltd. | Integrated circuit stacking system with integrated passive components |
US8409970B2 (en) | 2005-10-29 | 2013-04-02 | Stats Chippac, Ltd. | Semiconductor device and method of making integrated passive devices |
US8188590B2 (en) * | 2006-03-30 | 2012-05-29 | Stats Chippac Ltd. | Integrated circuit package system with post-passivation interconnection and integration |
JP2009537980A (ja) * | 2006-05-18 | 2009-10-29 | エヌエックスピー ビー ヴィ | 半導体装置におけるインダクタの品質係数を向上する方法 |
US8234773B2 (en) * | 2006-06-05 | 2012-08-07 | The United States Of America As Represented By The Secretary Of The Army | Apparatus and method for forming electronic devices |
US8124490B2 (en) * | 2006-12-21 | 2012-02-28 | Stats Chippac, Ltd. | Semiconductor device and method of forming passive devices |
US7935607B2 (en) * | 2007-04-09 | 2011-05-03 | Freescale Semiconductor, Inc. | Integrated passive device with a high resistivity substrate and method for forming the same |
US7790503B2 (en) * | 2007-12-18 | 2010-09-07 | Stats Chippac, Ltd. | Semiconductor device and method of forming integrated passive device module |
US7759212B2 (en) * | 2007-12-26 | 2010-07-20 | Stats Chippac, Ltd. | System-in-package having integrated passive devices and method therefor |
US7749814B2 (en) * | 2008-03-13 | 2010-07-06 | Stats Chippac, Ltd. | Semiconductor device with integrated passive circuit and method of making the same using sacrificial substrate |
US8269308B2 (en) * | 2008-03-19 | 2012-09-18 | Stats Chippac, Ltd. | Semiconductor device with cross-talk isolation using M-cap and method thereof |
US8236428B2 (en) * | 2008-07-10 | 2012-08-07 | Jx Nippon Mining & Metals Corporation | Hybrid silicon wafer and method for manufacturing same |
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US20100327406A1 (en) * | 2009-06-26 | 2010-12-30 | Stats Chippac, Ltd. | Semiconductor Device and Method of Forming Inductor Over Insulating Material Filled Trench In Substrate |
US8018027B2 (en) * | 2009-10-30 | 2011-09-13 | Murata Manufacturing Co., Ltd. | Flip-bonded dual-substrate inductor, flip-bonded dual-substrate inductor, and integrated passive device including a flip-bonded dual-substrate inductor |
KR101101490B1 (ko) * | 2009-11-24 | 2012-01-03 | 삼성전기주식회사 | 차폐 기능을 갖는 무선 장치 |
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US8252422B2 (en) | 2010-07-08 | 2012-08-28 | Jx Nippon Mining & Metals Corporation | Hybrid silicon wafer and method of producing the same |
US8647747B2 (en) * | 2010-07-08 | 2014-02-11 | Jx Nippon Mining & Metals Corporation | Hybrid silicon wafer and method of producing the same |
KR101101430B1 (ko) | 2010-08-19 | 2012-01-02 | 삼성전기주식회사 | 공유 esd 보호 회로를 갖는 파워 증폭 모듈 |
US8853819B2 (en) | 2011-01-07 | 2014-10-07 | Advanced Semiconductor Engineering, Inc. | Semiconductor structure with passive element network and manufacturing method thereof |
US9219059B2 (en) | 2012-09-26 | 2015-12-22 | International Business Machines Corporation | Semiconductor structure with integrated passive structures |
US10129979B2 (en) | 2016-09-23 | 2018-11-13 | Apple Inc. | PCB assembly with molded matrix core |
US11296190B2 (en) * | 2020-01-15 | 2022-04-05 | Globalfoundries U.S. Inc. | Field effect transistors with back gate contact and buried high resistivity layer |
CN112234143B (zh) * | 2020-12-14 | 2021-04-20 | 成都嘉纳海威科技有限责任公司 | 片上集成ipd封装结构及其封装方法、三维封装结构 |
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-
2004
- 2004-04-29 US US10/835,338 patent/US7259077B2/en not_active Expired - Fee Related
-
2005
- 2005-04-27 EP EP05252629A patent/EP1592047A3/en not_active Withdrawn
- 2005-04-28 TW TW094113598A patent/TW200625400A/zh unknown
- 2005-04-28 JP JP2005131277A patent/JP2005317979A/ja active Pending
- 2005-04-29 KR KR1020050036399A patent/KR20060047662A/ko active IP Right Grant
- 2005-04-29 CN CN2005100914009A patent/CN1776895B/zh not_active Expired - Fee Related
-
2007
- 2007-07-18 US US11/879,632 patent/US20070262418A1/en not_active Abandoned
-
2009
- 2009-05-06 US US12/387,706 patent/US20090218655A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05144745A (ja) * | 1991-11-18 | 1993-06-11 | Sanyo Electric Co Ltd | 半導体基板の製造方法 |
JPH1097960A (ja) * | 1996-09-19 | 1998-04-14 | Toyo Tanso Kk | 炭化ケイ素質ダミーウェハ |
JPH10284694A (ja) * | 1997-04-03 | 1998-10-23 | Lucent Technol Inc | 無線周波数以上で動作する電子回路をサポートするシリコン製基板を有する物品 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007258713A (ja) * | 2006-03-17 | 2007-10-04 | Sychip Inc | 集積受動デバイス基板 |
Also Published As
Publication number | Publication date |
---|---|
KR20060047662A (ko) | 2006-05-18 |
US20070262418A1 (en) | 2007-11-15 |
US7259077B2 (en) | 2007-08-21 |
US20090218655A1 (en) | 2009-09-03 |
EP1592047A2 (en) | 2005-11-02 |
US20050253255A1 (en) | 2005-11-17 |
EP1592047A3 (en) | 2009-04-01 |
TW200625400A (en) | 2006-07-16 |
CN1776895A (zh) | 2006-05-24 |
CN1776895B (zh) | 2010-11-03 |
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