JP2009537980A - 半導体装置におけるインダクタの品質係数を向上する方法 - Google Patents
半導体装置におけるインダクタの品質係数を向上する方法 Download PDFInfo
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- JP2009537980A JP2009537980A JP2009510601A JP2009510601A JP2009537980A JP 2009537980 A JP2009537980 A JP 2009537980A JP 2009510601 A JP2009510601 A JP 2009510601A JP 2009510601 A JP2009510601 A JP 2009510601A JP 2009537980 A JP2009537980 A JP 2009537980A
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- inductor
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- 238000000034 method Methods 0.000 title claims description 47
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 239000000758 substrate Substances 0.000 claims abstract description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 33
- 239000010703 silicon Substances 0.000 claims abstract description 33
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 26
- 229920005591 polysilicon Polymers 0.000 claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 claims abstract description 17
- 229910052786 argon Inorganic materials 0.000 claims abstract description 14
- 239000003990 capacitor Substances 0.000 claims description 18
- 150000002500 ions Chemical class 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 238000005468 ion implantation Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 2
- 238000002513 implantation Methods 0.000 abstract description 12
- 230000000873 masking effect Effects 0.000 abstract description 3
- 230000002411 adverse Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000001465 metallisation Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005338 heat storage Methods 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- -1 nitrogen Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/10—Inductors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (12)
- 少なくとも1個の受動コンポーネントを担持した集積回路を作製する方法において、この方法は、受動コンポーネントをその上に形成することができる半導体基板を設けるステップと、この基板上に導電材料の層を堆積するステップと、前記基板上にパターン形成したレジスト層を設け、かつこのレジスト層をエッチングするステップと、イオン注入ステップであって、前記エッチングしたポリシリコン層で被覆されていないエリア上にアモルファス層を形成する該イオン注入ステップと、およびこのイオン注入ステップ後に前記レジスト層を除去するステップと、を備えたことを特徴とする集積回路の作製方法。
- 請求項1に記載の方法において、前記イオン注入ステップは、重イオンにより実行する方法。
- 請求項2に記載の方法において、前記重イオンは、アルゴンを有する方法。
- 請求項1に記載の方法において、前記受動コンポーネントは、マルチターンインダクタを有し、このマルチターンインダクタは、前記基板上に形成した金属螺旋体とした方法。
- 請求項1に記載の方法において、前記集積回路は、少なくとも1個の他の受動コンポーネントを担持することを特徴とする方法。
- 請求項5に記載の方法において、前記少なくとも1個の他の受動コンポーネントは、平坦キャパシタ、ピットキャパシタまたは抵抗器とした方法。
- 請求項1に記載の方法において、前記少なくとも1個の他の受動コンポーネントを、誘電体層によって前記半導体基板から絶縁分離した方法。
- 請求項7に記載の方法において、前記誘電体層は、二酸化ケイ素により構成し、前記基板はシリコン基板により構成した方法。
- 請求項1に記載の方法において、前記導電材料は、半導体材料とした方法。
- 請求項1または9に記載の方法において、前記導電材料を、シリコンとした方法。
- 請求項9に記載の方法において、前記半導体材料は、多結晶組織を有するものとした方法。
- 請求項1に記載の方法によって作製した少なくとも1個の受動コンポーネントを担持した集積回路。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP06300487 | 2006-05-18 | ||
PCT/IB2007/051835 WO2007135620A1 (en) | 2006-05-18 | 2007-05-15 | Method of increasing the quality factor of an inductor in a semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2009537980A true JP2009537980A (ja) | 2009-10-29 |
Family
ID=38537538
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009510601A Pending JP2009537980A (ja) | 2006-05-18 | 2007-05-15 | 半導体装置におけるインダクタの品質係数を向上する方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20090267182A1 (ja) |
EP (1) | EP2024990B1 (ja) |
JP (1) | JP2009537980A (ja) |
CN (1) | CN101449362B (ja) |
AT (1) | ATE515059T1 (ja) |
WO (1) | WO2007135620A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101101686B1 (ko) * | 2010-01-07 | 2011-12-30 | 삼성전기주식회사 | 고주파 반도체 소자 및 그 제조방법 |
US8735986B2 (en) | 2011-12-06 | 2014-05-27 | International Business Machines Corporation | Forming structures on resistive substrates |
CN105163941B (zh) * | 2013-07-12 | 2017-10-24 | 惠普发展公司,有限责任合伙企业 | 具有非晶金属电阻器的热喷墨打印头堆叠件 |
CN103426729A (zh) * | 2013-08-29 | 2013-12-04 | 上海宏力半导体制造有限公司 | 提高整合被动器件电感器q值的方法 |
CN104517803A (zh) * | 2013-09-27 | 2015-04-15 | 中芯国际集成电路制造(上海)有限公司 | 一种集成无源器件中去耦合电容结构及其制备方法 |
CN103956362A (zh) * | 2014-05-20 | 2014-07-30 | 中国工程物理研究院电子工程研究所 | 基于图形化高能离子注入的低衬底损耗硅基集成电路及其制作方法 |
CN103972053A (zh) * | 2014-05-29 | 2014-08-06 | 中国工程物理研究院电子工程研究所 | 一种图形化高能重离子注入的低损耗硅基射频无源器件的制作方法 |
US11501908B2 (en) | 2016-10-04 | 2022-11-15 | Nanohenry, Inc. | Miniature inductors and related circuit components and methods of making same |
EP3327806B1 (en) | 2016-11-24 | 2021-07-21 | Murata Integrated Passive Solutions | Integrated electronic component suitable for broadband biasing |
US11289474B2 (en) | 2020-04-20 | 2022-03-29 | Globalfoundries U.S. Inc. | Passive devices over polycrystalline semiconductor fins |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
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US4356041A (en) * | 1979-10-01 | 1982-10-26 | Hitachi, Ltd. | Method of fabricating a mis-type device by using a gate electrode and selectively implanted nitride layer |
JPH0358430A (ja) * | 1989-07-27 | 1991-03-13 | Toshiba Corp | 半導体装置及びその製造方法 |
JPH10150195A (ja) * | 1996-10-25 | 1998-06-02 | Lg Semicon Co Ltd | Mosfet及びその製造方法 |
JPH11102961A (ja) * | 1997-09-29 | 1999-04-13 | Nec Corp | 半導体装置の製造方法 |
JPH11204741A (ja) * | 1997-12-29 | 1999-07-30 | Ind Technol Res Inst | 半導体基体上に局部的半絶縁領域を形成するプロセス |
JP2003078136A (ja) * | 2001-09-05 | 2003-03-14 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
JP2004221570A (ja) * | 2002-12-27 | 2004-08-05 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
US20050051870A1 (en) * | 2002-12-27 | 2005-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and a method of manufacturing the same |
WO2005109636A1 (en) * | 2004-05-06 | 2005-11-17 | Koninklijke Philips Electronics N.V. | Electronic device |
JP2005340731A (ja) * | 2004-05-31 | 2005-12-08 | Nec Corp | インダクタ |
Family Cites Families (6)
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US5514902A (en) * | 1993-09-16 | 1996-05-07 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having MOS transistor |
US6093936A (en) * | 1995-06-07 | 2000-07-25 | Lsi Logic Corporation | Integrated circuit with isolation of field oxidation by noble gas implantation |
KR100232206B1 (ko) * | 1996-12-26 | 1999-12-01 | 김영환 | 반도체 소자의 제조방법 |
US6258688B1 (en) * | 2000-03-15 | 2001-07-10 | Taiwan Semiconductor Manufacturing Company | Method to form a high Q inductor |
US6534406B1 (en) * | 2000-09-22 | 2003-03-18 | Newport Fab, Llc | Method for increasing inductance of on-chip inductors and related structure |
US7259077B2 (en) * | 2004-04-29 | 2007-08-21 | Sychip Inc. | Integrated passive devices |
-
2007
- 2007-05-15 JP JP2009510601A patent/JP2009537980A/ja active Pending
- 2007-05-15 US US12/301,405 patent/US20090267182A1/en not_active Abandoned
- 2007-05-15 WO PCT/IB2007/051835 patent/WO2007135620A1/en active Application Filing
- 2007-05-15 EP EP07735905A patent/EP2024990B1/en active Active
- 2007-05-15 CN CN2007800179109A patent/CN101449362B/zh active Active
- 2007-05-15 AT AT07735905T patent/ATE515059T1/de not_active IP Right Cessation
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4356041A (en) * | 1979-10-01 | 1982-10-26 | Hitachi, Ltd. | Method of fabricating a mis-type device by using a gate electrode and selectively implanted nitride layer |
JPH0358430A (ja) * | 1989-07-27 | 1991-03-13 | Toshiba Corp | 半導体装置及びその製造方法 |
JPH10150195A (ja) * | 1996-10-25 | 1998-06-02 | Lg Semicon Co Ltd | Mosfet及びその製造方法 |
JPH11102961A (ja) * | 1997-09-29 | 1999-04-13 | Nec Corp | 半導体装置の製造方法 |
JPH11204741A (ja) * | 1997-12-29 | 1999-07-30 | Ind Technol Res Inst | 半導体基体上に局部的半絶縁領域を形成するプロセス |
JP2003078136A (ja) * | 2001-09-05 | 2003-03-14 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
JP2004221570A (ja) * | 2002-12-27 | 2004-08-05 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
US20050051870A1 (en) * | 2002-12-27 | 2005-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and a method of manufacturing the same |
WO2005109636A1 (en) * | 2004-05-06 | 2005-11-17 | Koninklijke Philips Electronics N.V. | Electronic device |
JP2007536759A (ja) * | 2004-05-06 | 2007-12-13 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 電子装置 |
JP2005340731A (ja) * | 2004-05-31 | 2005-12-08 | Nec Corp | インダクタ |
Also Published As
Publication number | Publication date |
---|---|
CN101449362A (zh) | 2009-06-03 |
EP2024990A1 (en) | 2009-02-18 |
EP2024990B1 (en) | 2011-06-29 |
WO2007135620A1 (en) | 2007-11-29 |
ATE515059T1 (de) | 2011-07-15 |
CN101449362B (zh) | 2012-03-28 |
US20090267182A1 (en) | 2009-10-29 |
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