CN105163941B - 具有非晶金属电阻器的热喷墨打印头堆叠件 - Google Patents
具有非晶金属电阻器的热喷墨打印头堆叠件 Download PDFInfo
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- CN105163941B CN105163941B CN201380076125.6A CN201380076125A CN105163941B CN 105163941 B CN105163941 B CN 105163941B CN 201380076125 A CN201380076125 A CN 201380076125A CN 105163941 B CN105163941 B CN 105163941B
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- metal
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- amorphous film
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- 239000005300 metallic glass Substances 0.000 title claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 128
- 239000002184 metal Substances 0.000 claims abstract description 128
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 24
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 24
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052752 metalloid Inorganic materials 0.000 claims abstract description 22
- 150000002738 metalloids Chemical class 0.000 claims abstract description 22
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 19
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 13
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 13
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 13
- 239000011651 chromium Substances 0.000 claims abstract description 13
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 13
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052741 iridium Inorganic materials 0.000 claims abstract description 13
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 13
- 239000011733 molybdenum Substances 0.000 claims abstract description 13
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 13
- 239000010955 niobium Substances 0.000 claims abstract description 13
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052703 rhodium Inorganic materials 0.000 claims abstract description 13
- 239000010948 rhodium Substances 0.000 claims abstract description 13
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims abstract description 13
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 13
- 239000010937 tungsten Substances 0.000 claims abstract description 13
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 13
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 13
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 12
- 239000010941 cobalt Substances 0.000 claims abstract description 12
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 12
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 12
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 12
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- 229910052796 boron Inorganic materials 0.000 claims abstract description 6
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 5
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims abstract 9
- 239000010410 layer Substances 0.000 claims description 22
- 239000004020 conductor Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 17
- 238000002161 passivation Methods 0.000 claims description 14
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 12
- 229910052719 titanium Inorganic materials 0.000 claims description 12
- 239000010936 titanium Substances 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 11
- 239000002019 doping agent Substances 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 10
- 238000009413 insulation Methods 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 230000001590 oxidative effect Effects 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000007641 inkjet printing Methods 0.000 claims description 2
- 239000007921 spray Substances 0.000 claims description 2
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- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 239000011241 protective layer Substances 0.000 claims 1
- 239000000976 ink Substances 0.000 description 20
- 239000000463 material Substances 0.000 description 19
- 239000013078 crystal Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 6
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- 239000011248 coating agent Substances 0.000 description 5
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
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- 238000005516 engineering process Methods 0.000 description 4
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- 150000002739 metals Chemical class 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 229910004490 TaAl Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000003708 ampul Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010020741 Hyperpyrexia Diseases 0.000 description 1
- 229910015629 MoNiSi Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- RVSGESPTHDDNTH-UHFFFAOYSA-N alumane;tantalum Chemical compound [AlH3].[Ta] RVSGESPTHDDNTH-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000002144 chemical decomposition reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
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- 238000005260 corrosion Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
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- 230000035515 penetration Effects 0.000 description 1
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- 238000007639 printing Methods 0.000 description 1
- 230000004224 protection Effects 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- -1 some top coats Chemical compound 0.000 description 1
- 238000000391 spectroscopic ellipsometry Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14016—Structure of bubble jet print heads
- B41J2/14088—Structure of heating means
- B41J2/14112—Resistive element
- B41J2/14129—Layer structure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14016—Structure of bubble jet print heads
- B41J2/14088—Structure of heating means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14016—Structure of bubble jet print heads
- B41J2/14088—Structure of heating means
- B41J2/14112—Resistive element
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1601—Production of bubble jet print heads
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1642—Manufacturing processes thin film formation thin film formation by CVD [chemical vapor deposition]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1646—Manufacturing processes thin film formation thin film formation by sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
- H01C1/148—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors the terminals embracing or surrounding the resistive element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
- H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
- H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
- H01C17/0652—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component containing carbon or carbides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
- H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
- H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
- H01C17/06526—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of metals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/006—Thin film resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14016—Structure of bubble jet print heads
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
- B41J2202/01—Embodiments of or processes related to ink-jet heads
- B41J2202/03—Specific materials used
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
- B41J2202/01—Embodiments of or processes related to ink-jet heads
- B41J2202/11—Embodiments of or processes related to ink-jet heads characterised by specific geometrical characteristics
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Abstract
本公开内容涉及具有非晶金属电阻器的热喷墨打印头堆叠件,其包括绝缘基底和应用至绝缘基底的电阻器。电阻器可以包括从5原子%至90原子%的类金属碳、硅或者硼;和分别从5原子%至90原子%的第一和第二金属钛、钒、铬、钴、镍、锆、铌、钼、铑、钯、铪、钽、钨、铱或者铂,其中第二金属不同于第一金属。类金属、第一金属和第二金属可以占非晶薄金属膜的至少70原子%。
Description
背景技术
薄金属膜可被用于各种应用,比如电子半导体装置、光学涂层以及打印技术。因此,一旦被沉积,薄金属膜可遭遇严酷的环境。这种薄膜可能遭受高热、腐蚀化学品等等。
例如,在典型的喷墨打印系统中,喷墨打印头喷射流体(例如,油墨)液滴通过多个喷嘴朝向打印介质(比如一张纸),以便将图像打印至打印介质上。喷嘴通常被布置为一个或多个列,使得随着打印头和打印介质相对于彼此移动从喷嘴适当地顺序喷射油墨引起字符或者其他图形被打印在打印介质上。
遗憾地,因为在打印过程中每秒数千次地重复喷射过程,崩塌的蒸气泡也具有损坏加热元件的不利影响。蒸气泡的重复崩塌导致对涂布加热元件的表面材料的气蚀损坏(cavitation damage)。数百万的崩塌事件中的每一个使涂层材料脱落。一旦油墨渗透涂布加热元件的表面材料并且接触热的、高电压电阻器表面,很快发生电阻器的快速腐蚀和物理破坏,使得加热元件失效。在喷墨领域之外,还存在系统的其他实例,其中结构可经历与严酷环境的接触。因此,在各种应用中使用的薄金属膜的领域内继续可以提供改善的性能的研究和开发。
附图说明
由之后的、连同附图考虑的详细描述,本公开内容的另外的特征和优势将是显而易见的,附图和详细描述通过实例的方式一起说明了本发明技术的特征。
图1是根据本公开内容的一个实例的三组分非晶薄金属膜的元素分布的示意性横截面视图的图;
图2是根据本公开内容的一个实例的三组分非晶薄金属膜的晶格结构的图;
图3是根据本公开内容的一个实例的四组分非晶薄金属膜的元素分布的示意性横截面视图的图;
图4是根据本公开内容的一个实例的四组分非晶薄金属膜的晶格结构的图;
图5是根据本公开内容的实例的热喷墨打印头堆叠件(stack)的一部分的横截面示意图;
图6是根据本公开内容的可选实例的热喷墨打印头堆叠件的一部分的横截面示意图;和
图7是根据本公开内容的可选实例的热喷墨打印头堆叠件的一部分的横截面示意图。
现在参考图解的示例性实施方式,并且本文将使用特定的语言描述示例性实施方式。无论如何应理解不意图因此限制公开内容的范围。
具体实施方式
在公开和描述本发明的技术之前,应当理解该公开内容不限于具体的工艺步骤和本文公开的材料,因为这些工艺步骤和材料可稍微变化。也应当理解使用本文使用的术语仅仅是为了描述具体实例的目的。术语并非意欲是限制性的,因为本发明技术的范围意欲仅由所附权利要求及其等价物限定。
已经认识到开发稳定的、具有稳健的化学、热和机械性质的非晶薄金属膜将是有利的。具体而言,已经认识到许多薄金属膜通常具有拥有晶界和粗糙表面的晶体结构。显而易见地,这种特性妨碍薄金属膜的化学、热和机械性质。然而,薄金属膜可由提供稳定的和非晶结构的三组分系统制成,该系统具有优异的化学、热和机械性质。
据此,本公开内容涉及热喷墨打印头堆叠件,其包括绝缘基底和电阻器。该电阻器可被施加至绝缘基底。电阻器可以包括如下的非晶层:从5原子%至90原子%的类金属碳、硅或者硼;从5原子%至90原子%的第一金属钛、钒、铬、钴、镍、锆、铌、钼、铑、钯、铪、钽、钨、铱或者铂;和从5原子%至90原子%的第二金属钛、钒、铬、钴、镍、锆、铌、钼、铑、钯、铪、钽、钨、铱或者铂。在该实例中第二金属不同于第一金属。类金属、第一金属和第二金属可以占非晶薄金属膜的至少70原子%。可选地,类金属、第一金属和第二金属中的两个组分可以占非晶薄金属膜的至少70原子%。在又另一实例中,类金属、第一金属和第二金属可以占电阻器的至少90原子%或者甚至100原子%。此外,在上述范围的每一个中,例如,对于类金属、第一金属和/或第二金属,范围的下端可被独立地修改为10原子%或者20原子%。同样地,这些范围的上端可被独立地修改为85原子%、80原子%或者70原子%。
制造热喷墨打印头堆叠件的方法可以包括施加非晶薄金属电阻器至绝缘基底,施加与非晶薄金属电阻器电连通的导体对,并且施加钝化层至导体对。非晶薄金属电阻器可以具有与以上描述的相同的材料,例如,类金属、第一金属和第二金属作为非晶膜的一部分。施加非晶薄金属电阻器至绝缘基底的步骤可以包括溅射、原子层沉积、化学气相沉积、电子束蒸发或者热蒸发。在一个实例中,施加非晶薄金属电阻器至绝缘基底的步骤包括溅射包含指定原子的掺合物的靶至绝缘基底上。具体地参考溅射,例如,这可以在5至15毫托以5至10nm/min的沉积速率执行,靶距离静止的基底大约4英寸。可以使用其他沉积条件,并且可以实现其他沉积速率,这取决于变量,比如靶尺寸、使用的电功率、压力、溅射气体、靶至基底间隔和各种其他沉积系统相关变量。在另一方面,沉积可以在存在掺杂剂的情况下进行,掺杂剂被并入薄膜中。在另一具体方面,掺杂剂可为氧和/或氮。
在仍另一实例中,热喷墨打印的方法可以包括使用加热电阻器从喷墨打印头热喷墨喷墨油墨的液滴。加热电阻器也可以具有与以上描述的相同的材料,例如,类金属、第一金属和第二金属作为非晶膜的一部分。
在这些实例的每一个中,从5原子%至85原子%的第三金属也可以存在,并且可以包括金属,比如钛、钒、铬、钴、镍、锆、铌、钼、铑、钯、铪、钽、钨、铱或者铂。在该实例中,第三金属不同于第一金属和第二金属。类金属、第一金属和第二金属的该范围在下端可以同样地被独立修改为10原子%或者20原子%,和/或在上端修改为80原子%或者70原子%。此外,在一个实例中,类金属、第一金属、第二金属和第三金属可以占电阻器的至少80原子%、至少90原子%或者甚至100原子%。
热打印头堆叠件也可以包括与电阻器电连接的导体对。在该实例中,导体对也可以分别包括施加至导体对的顶表面而非至电阻器的钝化层。在另一实例中,尽管电阻器材料抵抗许多喷墨油墨的腐蚀性质,但是在一个实例中,电绝缘膜也可被施加至电阻器。当两个导体均涂布有介电层(钝化层和电绝缘膜)时,可以使用常见的钝化或者电绝缘膜,或者可以使用单独的材料涂布层。
具体参考制备电阻器使用的材料,可以制备三或者四(或者更多)组分非晶掺合物。如所提及的,组分之一可以是类金属,并且另外两种或者三种组分可以是IV、V、VI、IX或者X(4、5、6、9或者10)族金属。这些三四组分的元素混合物可以以使得当施加至基底时混合物是均质的方式并且大量混合。如所提及的,使用如所提及的若干沉积技术中的任一种,混合物可被施加至合适的基底。通过以足够高的浓度使用这些三或者四(或者更多)组分,尺寸和性质的“混淆”不利于晶格结构的形成,这在单一组分或者甚至二组分系统中更加典型。选择具有合适尺寸差异的组分可以有助于最小化结构的结晶。例如,在两种元素之间非晶薄金属膜可具有至少12%的原子分散度。在另一方面,在三种元素之间——例如类金属、第一金属和第二金属,非晶薄金属膜可具有至少12%的原子分散度。如本文所用,“原子分散度”指的是两个原子的半径之间的尺寸的差异。在一个实例中,原子分散度可以为至少15%,并且在一个方面,可以为至少20%。组分之间的原子分散度可以有助于本发明的膜的期望性质,包括热稳定性、氧化稳定性、化学稳定性和表面粗糙度,这些是一些其他薄金属膜未实现的。如本文讨论的,可以通过非晶薄金属膜的氧化温度和/或氧化物生长速率测量氧化稳定性。
在许多薄膜堆叠件中,通常使用钽(Ta),比如用于某些顶涂层,因为其化学地耐受许多油墨并且也抵抗来自气泡崩塌的机械气蚀力。然而,在多数薄膜应用中,钽和其他金属以晶体形式被沉积。这导致晶界和固有地粗糙表面。晶体材料中的氧化物生长通常沿着这些晶界,并且由于氧化的膜消耗是用结晶金属覆盖的喷墨电阻器膜堆叠件的一个主要失效方式。此外,晶界可以促进裂纹扩展并且限制机械鲁棒性。因此,已经认识到可以使用非晶金属膜——比如本文描述的那些,其非常耐热和化学品,并且因此可以在没有其他保护涂层或者仅具有薄的绝缘保护涂层的情况下使用。因此,在一些实例中典型的钽顶涂层可被完全移除。
关于电阻器本身,本公开内容的材料可以提供合适的钽和铝合金的替代物,因为它们耐受由喷墨油墨引起的化学侵蚀,并且固有地在机械上耐受由于缺少晶界引起的断裂。这些材料在通常用于利用水性喷墨油墨的热喷墨成像的温度范围内是热稳定的。此外,可以利用更少的能量,因为可以没有额外的涂层或者仅利用如前所述的相对薄的介电涂层形成和使用电阻器。例如,在典型的热喷墨油墨系统中,堆叠件可以包括2500埃钝化层和5000埃钽层。通过移除钽层并且减小钝化层的厚度(或者完全消除它),可以实现喷射油墨滴所需的能量的量的显著减小。通过减少发射所需的能量,也可以实现发射频率的改善。
现在转向图1和3,本发明的薄金属膜(分别为三和四组分膜)可以具有的组分分布带有期望的原子分散度。显著地,本发明的薄金属膜一般可以为非晶的,具有光滑的、无晶粒(grain-free)结构。现在转向图2和4,呈现了本发明的非晶薄金属膜的晶格结构,其为非晶的。更多的晶体结构趋于具有更多的限定的晶界,这对于化学品耐受性可以是较不期望的,尤其在喷墨热电阻器系统中,该系统同时经历高温度(为了喷射)和化学侵蚀(来自油墨)二者。注意到在理论上呈现图1-4。三和四组分系统之间的相似之处并不意欲推断相同的一般结构、结合点、结合长度等等。因此,应当理解这些图本质上仅是示意性的,并且为了描绘各种结构的一般非晶性质的目的而进行呈现,而不是为了推断两种具体非晶膜之间的相似之处。
如本文所讨论的,本发明的非晶薄金属膜可以具有优异的性质,包括用于热喷墨应用的热稳定性、氧化稳定性、低表面粗糙度和合适的电阻率。在一个实例中,本发明的薄金属膜可具有小于1nm的均方根(RMS)粗糙度。在一个方面,RMS粗糙度可以小于0.5nm。在另一方面,RMS粗糙度可以小于0.1nm。测量RMS粗糙度的一个方法包括在100nm乘100nm区域上测量原子力显微镜(AFM)。在其他方面,AFM可以在10nm乘10nm区域、50nm乘50nm区域或者1微米乘1微米区域上进行测量。也可使用其他光散射技术,比如x-射线反射法或者光谱椭圆偏振法(spectroscopic ellipsometry)。
在另一实例中,非晶薄金属膜可以具有至少400℃的热稳定性。在一个方面,热稳定性可为至少800℃。在另一方面,热稳定性可为至少900℃。如本文所用,“热稳定性”指的是非晶薄金属膜可被加热而同时保持非晶结构的最高温度。测量热稳定性的一个方法包括在石英管中密封非晶薄金属膜,加热管至一定温度,并且使用x-射线衍射评价原子结构和原子排序的程度。
在又另一实例中,非晶薄金属膜可以具有至少700℃的氧化温度。在一个方面,氧化温度可为至少800℃,并且在另一方面,至少1000℃。如本文所用,氧化温度为在由于部分或者完全氧化的薄膜的应力产生和脆化引起的薄膜失效之前非晶薄金属膜可被暴露的最高温度。测量氧化温度的一个方法是以逐步升高的温度在空气中加热非晶薄金属膜直到薄膜破裂并且脱离基底。
在另一实例中,非晶薄金属膜可以具有小于0.05nm/min的氧化物生长速率。在一个方面,氧化物生长速率可以小于0.04nm/min,或者在另一方面,小于0.03nm/min。测量氧化物生长速率的一个方法是在空气下(20%氧)在300℃的温度下加热非晶薄金属膜,使用光谱椭圆偏振法周期性地测量非晶薄金属膜上氧化的量,并且将数据平均以提供nm/min速率。取决于组分和制造的方法,非晶薄金属膜可具有宽范围的电阻率,包括在从100μΩ·cm至10000μΩ·cm、150μΩ·cm至4500μΩ·cm、150μΩ·cm至2000μΩ·cm或者200μΩ·cm至1000μΩ·cm的范围内。也可实现该范围之外的电阻率。
一般地,非晶薄金属膜可具有混合负热(negative heat)。如本文所讨论的,本发明的薄金属膜一般地包括类金属、第一金属和第二金属,其中第一和第二金属可以包括选自元素周期表IV、V、VI、IX和X(4、5、6、9和10)族的元素。在一个实例中,非晶薄金属膜可以包括选自钛、钒、铬、锆、铌、钼、铑、铪、钽、钨和铱的难熔金属。在一个方面,第一和/或第二金属可以以范围从20at%至90at%的量存在于薄膜中。在另一方面,第一和/或第二金属可以以范围从20at%至40at%的量存在于薄膜中。
此外,非晶薄金属膜可以进一步包括掺杂剂。在一个实例中,掺杂剂可以包括氮、氧及其混合物。掺杂剂一般可以以范围从0.1at%至15at%的量存在于非晶薄金属膜中。在一个实例中,掺杂剂可以以范围从0.1at%至5at%的量存在。也可以存在较小量的掺杂剂,但是以这种低浓度,它们将通常被认为是杂质。此外,在一个方面,非晶薄金属膜可以不含铝、银和金。
一般地,非晶薄金属膜可以具有范围从10埃至1微米的厚度。在一个实例中,厚度可以从10埃至0.5微米。在一个方面,厚度可以从0.02微米至0.3微米。
现在转向图5-7,示出了三个实例结构,其将适合于热喷墨打印头中使用的薄膜堆叠件。具体而言,示出硅晶片110具有施加至其的电绝缘层120。在该实例中,具有电绝缘层的硅晶片组成本文所述的“绝缘基底”,因为表面与半导体硅基底是绝缘的。因此,术语“绝缘基底”意思是其中施加电阻器的基底的表面是绝缘的。也就是说,任何绝缘基底都可被用于本领域中已知的任何布置。电绝缘层的合适的平均厚度可以从0.5微米至2微米。
将非晶的电阻器130施加至绝缘层120。包括类金属(Si、C或者B)和IV、V、VI、IX和X族的两种或多种金属的任何本文所述的材料可被选择用于电阻器。电阻器的合适的平均厚度可以从0.02微米至0.3微米,尽管也可以使用该范围之外的厚度。此外,如本文所述的电阻器可以用适合实现期望的电学性质的任何材料进行掺杂,电学性质包括但不限于电阻率。电阻器同样也与置于电阻器的任一侧上的导体对140电连通。这些导体可以充当电阻器的电极。在该实例中,导体也被施加至绝缘层,尽管该布置仅仅是示例性的。导体可以具有本领域中已知的任何材料,但是在一个实例中,导体可以是铝或者铝和铜的合金。
此外,将也是绝缘的钝化层150施加至导体以防止油墨160和导体之间的接触。例如,导体的合适的平均厚度可以从0.1微米至2微米,并且钝化层的合适的平均厚度可以从0.05微米至1微米。再者,在一些实例中也可以使用这些范围之外的厚度。任选地,尽管电阻器130关于其耐油墨性和热稳定性性质是高度有效的,但是电绝缘膜170同样可被施加至电阻器,这在图6和7中被示出。该膜可以相对地薄至相对地厚,例如,从50埃至5000埃、从50埃至2500埃、从100埃至1000埃、从100埃至500埃、从100埃至200埃等等。即使在2500埃,许多目前工艺水平的系统在一些地方通常使用5000埃数量级的钽和其他涂层覆盖作为最顶层(一个或多个)以防止化学退化,并且因此,使用与典型的介电涂层厚度相比减小厚度的绝缘涂层的能力是本领域中的进步。也就是说,如图7中所示,因为在该领域是典型的,顶部金属涂层180也可与新的本文所述的电阻器材料一起使用以改善与目前工艺水平的电阻器相比的效果。
可被用于电绝缘层120、钝化层150、薄电绝缘膜170或者任何其他绝缘层的绝缘材料可以是SiN、SiO2、HfO2、ZrO2、Al2O3或者其他常用的介电材料。例如,薄电绝缘膜可由非晶金属膜的热氧化或者电绝缘薄膜的沉积形成。同样地,应注意薄电绝缘膜可以用与钝化层150相同的材料集成或者具有与钝化层150相同的材料。也可以使用其它层,如在考虑本公开内容之后本领域技术人员将认识到的。
应注意,如在本说明书和所附权利要求中所用,单数形式“一种”、“一个”和“该(所述,the)”包括复数指代物,除非上下文明确另外指出。
如本文所用,“不含”指的是大量地而非痕量地缺少材料,比如杂质。
如本文所用,为了方便起见可以以共同的列表呈现多个项目、结构要素、组成要素和/或材料。然而,这些列表应当被解释为如同列表的每个要素被单独地确定为单独的且独特的要素。因此,在没有相反指示的情况下,该列表中的单个要素不应仅仅基于它们在共同列表中的呈现被理解为相同列表的任何其他要素的实际上的等价物。
在本文可以以范围的形式表示或者呈现浓度、量和其他数值。应当了解的是使用这种范围的形式仅仅是为了方便和简洁,并且因此其应被灵活地理解不仅包括明确地描绘为范围的极限的数值,而且包括包含在该范围内的所有的单个数值或者子区间,如同明确地描绘每一个数值和子区间一样。作为例证,数值范围“大约1at%至大约5at%”应被理解为不仅包括明确描绘的值大约1at%至大约5at%,而且还包括该指出的范围内的单个值和子区间。因此,该数值范围内包括的是单个值,比如2、3.5和4,以及子区间比如从1-3、从2-4和从3-5等等。该相同的原理应用于仅描绘一个数值的范围。此外,不论范围的宽度或者所描述的特征如何,这种理解均应适用。
实施例
以下实施例说明了目前已知的公开内容的实施方式。因此,这些实施例不应被认为公开内容的限制,而仅仅是为了教导如何制造目前已知的热喷墨打印头。因此,在本文公开了代表性的数个组合物、非晶薄膜堆叠件及其制造方法。
实施例1–薄金属膜
通过DC和RF(RF在50W至100W,DC在35W至55W)溅射在5毫托至15毫托在氩气下在硅晶片上制备各种薄金属膜。所得膜厚度在100nm至500nm的范围内。在表1中列出具体组分和量。
表1
*由原子%计算重量比并且四舍五入至最接近的整数
实施例2–薄金属膜
通过DC和RF(RF在50W至100W,DC在35W至55W)溅射在5毫托至15毫托在氩气下在硅晶片上制备各种薄金属膜。所得膜厚度在100nm至500nm的范围内。在表2中列出具体组分和量。
表2
薄膜组合物 | 比例 | 比例* |
(原子%) | (重量%) | |
TaCoB | 60:30:10 | 85:14:1 |
NbWB | 50:40:10 | 38:61:1 |
MoPtC | 40:50:10 | 28:71:1 |
WTiC | 30:40:30 | 71:25:5 |
MoNiSi | 45:40:5 | 63:35:2 |
TaWNiB | 35:35:10:20 | 47:47:4:2 |
*由原子%计算重量比并且四舍五入至最接近的整数
实施例3–薄金属膜性质
测试实施例1的非晶薄金属膜的电阻率、热稳定性、化学稳定性、氧化温度、氧化物生长速率。在表3中列出结果。所有的膜具有小于1nm的表面RMS粗糙度。
通过原子力显微镜(AFM)测量表面RMS粗糙度。通过不同沉积条件的共线四点探针测量电阻率,其提供表3中列出的范围。通过在大约50毫托在石英管中密封非晶薄金属膜并且退火直至用非晶状态的x-射线确认报道的温度测量热稳定性,其中x-射线衍射图表示了布拉格反射的证据。通过在55℃将非晶薄金属膜浸没在Hewlett Packard商品油墨CH602SERIES、卷筒印刷机的HP粘合剂;CH585SERIES、卷筒印刷机的HP粘合剂;和CH598SERIES、卷筒印刷机的HP黑色油墨中;并且检查2和4周测量化学稳定性。利用薄膜当其表示无可视的物理变化或者分层时呈现适当的化学稳定性,由“是”在表3中表明。测量氧化温度为在由于部分或者完全氧化的薄膜的应力产生和脆化引起的薄膜失效之前非晶薄金属膜可被暴露的最高温度。通过在300℃的温度在空气(20%氧)下加热非晶薄金属膜,使用光谱椭圆偏振法周期性地经过15、30、45、60、90和120分钟的时间段并且然后在12小时测量非晶薄金属膜上的氧化量,并且将数据平均以提供nm/min速率来测量氧化物生长速率。
表3
*显示在大约60分钟后钝化的证据(降低的生长速率)
实施例4–电阻率比较
为了比较,将在喷墨油墨打印头中用作电阻器的典型的钽-铝合金与特定的TaWSi合金(比如在以上表3中阐述的一种)的电阻率进行比较。在喷墨打印头中可用的TaAl合金的特定的电阻率为~220μΩ·cm。作为对比制备的TaWSi合金的特定的电阻率为~230μΩ·cm,其电阻率与已知的TaAl电阻器非常具有可比性。
尽管已经参考特定实施方式描述了公开内容,但是本领域技术人员将理解在不背离本公开内容的精神的情况下可以进行各种改进、变化、省略和替换。因此,期望的是本公开内容仅由权利要求书的范围限定。
Claims (14)
1.一种具有非晶金属电阻器的热喷墨打印头堆叠件,包括:
绝缘基底;
应用至所述绝缘基底的电阻器,所述电阻器包括如下的非晶膜:
5原子%至90原子%的类金属,其中所述类金属是碳、硅或者硼,
5原子%至90原子%的第一金属,其中所述第一金属是钛、钒、铬、钴、镍、锆、铌、钼、铑、钯、铪、钽、钨、铱或者铂,和
5原子%至90原子%的第二金属,其中所述第二金属是钛、钒、铬、钴、镍、锆、铌、钼、铑、钯、铪、钽、钨、铱或者铂,其中所述第二金属不同于所述第一金属,
其中所述类金属、所述第一金属和所述第二金属占所述非晶膜的至少70原子%,且其中所述电阻器的所述非晶膜具有小于1nm的表面RMS粗糙度。
2.权利要求1所述的热喷墨打印头堆叠件,其中所述非晶膜进一步包括从5原子%至85原子%的第三金属,其中所述第三金属是钛、钒、铬、钴、镍、锆、铌、钼、铑、钯、铪、钽、钨、铱或者铂,其中所述第三金属不同于所述第一金属和所述第二金属。
3.权利要求1所述的热喷墨打印头堆叠件,进一步包括与所述电阻器电连接的导体对,所述导体对包括施加至所述导体对的顶表面而不施加至所述电阻器的钝化层。
4.权利要求1所述的热喷墨打印头堆叠件,进一步包括施加至所述电阻器的薄电绝缘膜。
5.权利要求1所述的热喷墨打印头堆叠件,其中所述电阻器的所述非晶膜进一步包括从0.1原子%至15原子%的掺杂剂,所述掺杂剂为氮、氧或其混合物。
6.权利要求1所述的热喷墨打印头堆叠件,其中所述电阻器的所述非晶膜具有至少400℃的热稳定性并且具有至少700℃的氧化温度。
7.权利要求1所述的热喷墨打印头堆叠件,其中所述电阻器的所述非晶膜具有小于0.05nm/min的氧化物生长速率。
8.权利要求1所述的热喷墨打印头堆叠件,其中所述电阻器的所述非晶膜在所述类金属、所述第一金属和所述第二金属的至少两个之间相对于彼此具有至少12%的原子分散度。
9.权利要求1所述的热喷墨打印头堆叠件,其中所述电阻器的所述非晶膜在所述类金属、所述第一金属和所述第二金属的每个之间相对于彼此具有至少12%的原子分散度。
10.权利要求1所述的热喷墨打印头堆叠件,其中所述电阻器的所述非晶膜具有从100μΩ·cm至10000μΩ·cm的体积电阻率。
11.一种制造具有非晶金属电阻器的热喷墨打印头堆叠件的方法,包括:
以热喷墨电阻器形式施加非晶膜至绝缘基底,所述非晶膜包括:
5原子%至90原子%的类金属,其中所述类金属是碳、硅或者硼;
5原子%至90原子%的第一金属,其中所述第一金属是钛、钒、铬、钴、镍、锆、铌、钼、铑、钯、铪、钽、钨、铱或者铂;和
5原子%至90原子%的第二金属,其中所述第二金属是钛、钒、铬、钴、镍、锆、铌、钼、铑、钯、铪、钽、钨、铱或者铂,并且其中所述第二金属不同于所述第一金属;其中所述电阻器的所述非晶膜具有小于1nm的表面RMS粗糙度,
施加导体对至所述绝缘基底并且与所述非晶金属电阻器电连通;和
施加钝化层至所述导体对,从而当装载喷墨油墨时化学隔离和电隔离所述导体对与喷墨油墨的接触。
12.权利要求11所述的方法,进一步包括施加一个或者多个保护层至所述电阻器的步骤。
13.权利要求11所述的方法,其中所述非晶金属电阻器进一步包括从5原子%至85原子%的第三金属,其中所述第三金属是钛、钒、铬、钴、镍、锆、铌、钼、铑、钯、铪、钽、钨、铱或者铂,其中所述第三金属不同于所述第一金属和所述第二金属。
14.一种热喷墨打印的方法,包括从使用加热电阻器的喷墨打印头热喷墨喷墨油墨的液滴,所述加热电阻器包括如下的非晶膜:
5原子%至90原子%的类金属,其中所述类金属是碳、硅或者硼;
5原子%至90原子%的第一金属,其中所述第一金属是钛、钒、铬、钴、镍、锆、铌、钼、铑、钯、铪、钽、钨、铱或者铂;和
5原子%至90原子%的第二金属,其中所述第二金属是钛、钒、铬、钴、镍、锆、铌、钼、铑、钯、铪、钽、钨、铱或者铂,并且其中所述第二金属不同于所述第一金属,其中所述电阻器的所述非晶膜具有小于1nm的表面RMS粗糙度。
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-
2013
- 2013-07-12 WO PCT/US2013/050205 patent/WO2015005934A1/en active Application Filing
- 2013-07-12 US US14/787,729 patent/US9469107B2/en active Active
- 2013-07-12 EP EP13889243.5A patent/EP2978608B1/en active Active
- 2013-07-12 CN CN201380076125.6A patent/CN105163941B/zh not_active Expired - Fee Related
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2014
- 2014-06-12 TW TW103120360A patent/TWI512119B/zh not_active IP Right Cessation
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EP2978608A4 (en) | 2017-08-30 |
EP2978608A1 (en) | 2016-02-03 |
US20160114584A1 (en) | 2016-04-28 |
EP2978608B1 (en) | 2021-05-19 |
US9469107B2 (en) | 2016-10-18 |
TW201512428A (zh) | 2015-04-01 |
WO2015005934A1 (en) | 2015-01-15 |
CN105163941A (zh) | 2015-12-16 |
TWI512119B (zh) | 2015-12-11 |
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