JP7620545B2 - 窒化ケイ素粉末及びその製造方法、並びに、窒化ケイ素焼結体の製造方法 - Google Patents
窒化ケイ素粉末及びその製造方法、並びに、窒化ケイ素焼結体の製造方法 Download PDFInfo
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- JP7620545B2 JP7620545B2 JP2021522821A JP2021522821A JP7620545B2 JP 7620545 B2 JP7620545 B2 JP 7620545B2 JP 2021522821 A JP2021522821 A JP 2021522821A JP 2021522821 A JP2021522821 A JP 2021522821A JP 7620545 B2 JP7620545 B2 JP 7620545B2
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- JP
- Japan
- Prior art keywords
- silicon nitride
- nitride powder
- powder
- mass
- sintered body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052581 Si3N4 Inorganic materials 0.000 title claims description 190
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims description 190
- 239000000843 powder Substances 0.000 title claims description 162
- 238000004519 manufacturing process Methods 0.000 title claims description 50
- 238000000034 method Methods 0.000 title claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 37
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 30
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 30
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 30
- 239000000460 chlorine Substances 0.000 claims description 30
- 229910052801 chlorine Inorganic materials 0.000 claims description 30
- 239000011737 fluorine Substances 0.000 claims description 30
- 229910052731 fluorine Inorganic materials 0.000 claims description 30
- 239000001301 oxygen Substances 0.000 claims description 30
- 229910052760 oxygen Inorganic materials 0.000 claims description 30
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 27
- 238000005245 sintering Methods 0.000 claims description 23
- 238000010304 firing Methods 0.000 claims description 20
- 239000002245 particle Substances 0.000 claims description 16
- 239000002994 raw material Substances 0.000 claims description 15
- 239000000377 silicon dioxide Substances 0.000 claims description 15
- 239000011164 primary particle Substances 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 description 19
- 239000012535 impurity Substances 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000006230 acetylene black Substances 0.000 description 6
- 238000013329 compounding Methods 0.000 description 6
- 239000005350 fused silica glass Substances 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 238000002156 mixing Methods 0.000 description 5
- 238000010306 acid treatment Methods 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 150000003949 imides Chemical class 0.000 description 4
- 238000013001 point bending Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 238000005261 decarburization Methods 0.000 description 3
- 238000003795 desorption Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- HLLSOEKIMZEGFV-UHFFFAOYSA-N 4-(dibutylsulfamoyl)benzoic acid Chemical compound CCCCN(CCCC)S(=O)(=O)C1=CC=C(C(O)=O)C=C1 HLLSOEKIMZEGFV-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000001354 calcination Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000010191 image analysis Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 238000007088 Archimedes method Methods 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229910003910 SiCl4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000006231 channel black Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000006232 furnace black Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004255 ion exchange chromatography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000003826 uniaxial pressing Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
- C04B35/587—Fine ceramics
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Ceramic Products (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019101281 | 2019-05-30 | ||
| JP2019101281 | 2019-05-30 | ||
| PCT/JP2020/020948 WO2020241700A1 (ja) | 2019-05-30 | 2020-05-27 | 窒化ケイ素粉末及びその製造方法、並びに、窒化ケイ素焼結体の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2020241700A1 JPWO2020241700A1 (https=) | 2020-12-03 |
| JP7620545B2 true JP7620545B2 (ja) | 2025-01-23 |
Family
ID=73553802
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021522821A Active JP7620545B2 (ja) | 2019-05-30 | 2020-05-27 | 窒化ケイ素粉末及びその製造方法、並びに、窒化ケイ素焼結体の製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP7620545B2 (https=) |
| TW (1) | TWI845692B (https=) |
| WO (1) | WO2020241700A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117120397A (zh) * | 2021-03-25 | 2023-11-24 | 电化株式会社 | 氮化硅粉末及其制造方法、以及氮化硅烧结体及其制造方法 |
| WO2025254768A2 (en) * | 2024-06-05 | 2025-12-11 | Heraeus Covantics North America Llc | Process for producing a sintered layered body by controlling the chlorine content of a powder employed |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009161376A (ja) | 2007-12-28 | 2009-07-23 | Toda Kogyo Corp | 窒化ケイ素粉末の製造法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5997507A (ja) * | 1982-11-26 | 1984-06-05 | Agency Of Ind Science & Technol | 等軸的粒状粒子からなる高純度窒化ケイ素粉末の製法 |
| JPS6340709A (ja) * | 1986-08-05 | 1988-02-22 | Showa Denko Kk | 易焼結性高純度窒化ケイ素微粉体の製造方法 |
| JP3283292B2 (ja) * | 1992-05-11 | 2002-05-20 | 電気化学工業株式会社 | 窒化珪素粉末の製造方法 |
| JP3438928B2 (ja) * | 1994-01-12 | 2003-08-18 | 電気化学工業株式会社 | 窒化珪素粉末の製造方法 |
| JPH10218613A (ja) * | 1997-02-03 | 1998-08-18 | Shin Etsu Chem Co Ltd | 窒化ケイ素粉末の高純化方法 |
| CN109608205B (zh) * | 2019-02-02 | 2021-04-16 | 清华大学 | 一种制备等轴状α相氮化硅粉末的方法 |
-
2020
- 2020-05-27 JP JP2021522821A patent/JP7620545B2/ja active Active
- 2020-05-27 WO PCT/JP2020/020948 patent/WO2020241700A1/ja not_active Ceased
- 2020-05-28 TW TW109117801A patent/TWI845692B/zh not_active IP Right Cessation
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009161376A (ja) | 2007-12-28 | 2009-07-23 | Toda Kogyo Corp | 窒化ケイ素粉末の製造法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202106615A (zh) | 2021-02-16 |
| WO2020241700A1 (ja) | 2020-12-03 |
| TWI845692B (zh) | 2024-06-21 |
| JPWO2020241700A1 (https=) | 2020-12-03 |
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