JP7596152B2 - 熱電変換デバイスおよびそれを製造するための方法 - Google Patents
熱電変換デバイスおよびそれを製造するための方法 Download PDFInfo
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- JP7596152B2 JP7596152B2 JP2020570642A JP2020570642A JP7596152B2 JP 7596152 B2 JP7596152 B2 JP 7596152B2 JP 2020570642 A JP2020570642 A JP 2020570642A JP 2020570642 A JP2020570642 A JP 2020570642A JP 7596152 B2 JP7596152 B2 JP 7596152B2
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- thermoelectric element
- thermoelectric
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- metal
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- 238000000034 method Methods 0.000 title claims description 61
- 238000006243 chemical reaction Methods 0.000 title claims description 55
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 123
- 239000002184 metal Substances 0.000 claims description 123
- 239000000463 material Substances 0.000 claims description 110
- 229910052710 silicon Inorganic materials 0.000 claims description 59
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 58
- 239000010703 silicon Substances 0.000 claims description 58
- 229910021332 silicide Inorganic materials 0.000 claims description 39
- 230000008569 process Effects 0.000 claims description 36
- 239000007788 liquid Substances 0.000 claims description 25
- 229910000676 Si alloy Inorganic materials 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 17
- 238000002844 melting Methods 0.000 claims description 14
- 230000008018 melting Effects 0.000 claims description 14
- 229910045601 alloy Inorganic materials 0.000 claims description 13
- 239000000956 alloy Substances 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 13
- 229910052709 silver Inorganic materials 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- 238000001816 cooling Methods 0.000 claims description 12
- 229910052732 germanium Inorganic materials 0.000 claims description 11
- 229910052718 tin Inorganic materials 0.000 claims description 11
- 229910052725 zinc Inorganic materials 0.000 claims description 11
- 239000000155 melt Substances 0.000 claims description 9
- 239000007787 solid Substances 0.000 claims description 9
- 150000003376 silicon Chemical class 0.000 claims description 8
- 230000008014 freezing Effects 0.000 claims description 7
- 238000007710 freezing Methods 0.000 claims description 7
- 239000000470 constituent Substances 0.000 claims description 3
- 239000012071 phase Substances 0.000 description 34
- 239000010410 layer Substances 0.000 description 18
- 150000002739 metals Chemical class 0.000 description 15
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 10
- 239000002131 composite material Substances 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 8
- 239000011701 zinc Substances 0.000 description 8
- FHTCLMVMBMJAEE-UHFFFAOYSA-N bis($l^{2}-silanylidene)manganese Chemical compound [Si]=[Mn]=[Si] FHTCLMVMBMJAEE-UHFFFAOYSA-N 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 238000007711 solidification Methods 0.000 description 5
- 230000008023 solidification Effects 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000001953 recrystallisation Methods 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910052790 beryllium Inorganic materials 0.000 description 3
- JRACIMOSEUMYIP-UHFFFAOYSA-N bis($l^{2}-silanylidene)iron Chemical compound [Si]=[Fe]=[Si] JRACIMOSEUMYIP-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000010587 phase diagram Methods 0.000 description 3
- 229910021350 transition metal silicide Inorganic materials 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- XNRNVYYTHRPBDD-UHFFFAOYSA-N [Si][Ag] Chemical compound [Si][Ag] XNRNVYYTHRPBDD-UHFFFAOYSA-N 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- YTHCQFKNFVSQBC-UHFFFAOYSA-N magnesium silicide Chemical compound [Mg]=[Si]=[Mg] YTHCQFKNFVSQBC-UHFFFAOYSA-N 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 239000002028 Biomass Substances 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 230000005678 Seebeck effect Effects 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910021357 chromium silicide Inorganic materials 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000021615 conjugation Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- -1 e.g. Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910021338 magnesium silicide Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
- H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Silicon Compounds (AREA)
- Powder Metallurgy (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL2020545A NL2020545B1 (en) | 2018-03-07 | 2018-03-07 | Thermoelectric conversion device |
| NL2020545 | 2018-03-07 | ||
| PCT/EP2019/055759 WO2019170826A1 (en) | 2018-03-07 | 2019-03-07 | Thermoelectric conversion device and method for manufacturing the same |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021517366A JP2021517366A (ja) | 2021-07-15 |
| JP2021517366A5 JP2021517366A5 (https=) | 2023-09-13 |
| JP7596152B2 true JP7596152B2 (ja) | 2024-12-09 |
Family
ID=62090002
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020570642A Active JP7596152B2 (ja) | 2018-03-07 | 2019-03-07 | 熱電変換デバイスおよびそれを製造するための方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US11621385B2 (https=) |
| EP (1) | EP3762978A1 (https=) |
| JP (1) | JP7596152B2 (https=) |
| CN (1) | CN111937167A (https=) |
| NL (1) | NL2020545B1 (https=) |
| WO (1) | WO2019170826A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7592282B2 (ja) * | 2020-09-16 | 2024-12-02 | 株式会社テックスイージー | 熱電素子及びその製造方法 |
| JP7841404B2 (ja) * | 2022-10-13 | 2026-04-07 | 住友電気工業株式会社 | 熱電変換材料、熱電変換素子および熱電変換モジュール |
| CN116904916B (zh) * | 2023-06-21 | 2024-01-02 | 武汉理工大学 | 一种高温液相渗硅制备高硅硅钢片的方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010538466A (ja) | 2007-08-29 | 2010-12-09 | フエロ コーポレーション | 太陽電池におけるファイヤースルー用の厚膜ペースト |
| JP2014049713A (ja) | 2012-09-04 | 2014-03-17 | Hitachi Chemical Co Ltd | 熱電変換モジュールおよびその製造方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02128425A (ja) * | 1988-11-07 | 1990-05-16 | Ricoh Co Ltd | 半導体装置の製造方法 |
| JPH08148726A (ja) * | 1994-09-22 | 1996-06-07 | Ngk Spark Plug Co Ltd | 熱電変換素子及びその製造方法 |
| JPH09100166A (ja) * | 1995-10-06 | 1997-04-15 | Tokuyama Corp | 複合焼結体 |
| JPH1022530A (ja) * | 1996-07-01 | 1998-01-23 | Sumitomo Special Metals Co Ltd | 熱電変換素子 |
| JPH1168172A (ja) * | 1997-08-11 | 1999-03-09 | Ngk Insulators Ltd | シリコン−ゲルマニウム系材料の接合方法および熱電変換モジュールの製造方法ならびに熱電変換モジュール |
| JP4285665B2 (ja) * | 1997-12-27 | 2009-06-24 | 日立金属株式会社 | 熱電変換素子 |
| DE10030354A1 (de) * | 2000-06-21 | 2002-01-10 | Bosch Gmbh Robert | Thermoelektrisches Bauelement |
| JP2002094131A (ja) * | 2000-09-13 | 2002-03-29 | Sumitomo Special Metals Co Ltd | 熱電変換素子 |
| JP4570071B2 (ja) | 2004-04-30 | 2010-10-27 | 日立粉末冶金株式会社 | 熱電変換モジュール及びその製造方法 |
| JP5881066B2 (ja) | 2010-11-30 | 2016-03-09 | 学校法人東京理科大学 | 熱電変換素子及び熱電変換モジュール |
| DE102012017556A1 (de) * | 2011-09-08 | 2013-03-14 | Hitachi Chemical Co., Ltd. | Thermoelektrisches konvertermodul und herstellungsverfahren dafür |
| US8841539B2 (en) * | 2012-03-25 | 2014-09-23 | Fayetteville State University | High efficiency thermoelectric device |
| JP2013201382A (ja) | 2012-03-26 | 2013-10-03 | Nagoya Univ | 熱電変換モジュール及びその製造方法 |
-
2018
- 2018-03-07 NL NL2020545A patent/NL2020545B1/en active
-
2019
- 2019-03-07 EP EP19709484.0A patent/EP3762978A1/en active Pending
- 2019-03-07 JP JP2020570642A patent/JP7596152B2/ja active Active
- 2019-03-07 US US16/978,251 patent/US11621385B2/en active Active
- 2019-03-07 WO PCT/EP2019/055759 patent/WO2019170826A1/en not_active Ceased
- 2019-03-07 CN CN201980017658.4A patent/CN111937167A/zh active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010538466A (ja) | 2007-08-29 | 2010-12-09 | フエロ コーポレーション | 太陽電池におけるファイヤースルー用の厚膜ペースト |
| JP2014049713A (ja) | 2012-09-04 | 2014-03-17 | Hitachi Chemical Co Ltd | 熱電変換モジュールおよびその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US11621385B2 (en) | 2023-04-04 |
| CN111937167A (zh) | 2020-11-13 |
| NL2020545B1 (en) | 2019-09-13 |
| US20200411741A1 (en) | 2020-12-31 |
| EP3762978A1 (en) | 2021-01-13 |
| JP2021517366A (ja) | 2021-07-15 |
| WO2019170826A1 (en) | 2019-09-12 |
| RU2020132751A (ru) | 2022-04-07 |
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