NL2020545B1 - Thermoelectric conversion device - Google Patents
Thermoelectric conversion device Download PDFInfo
- Publication number
- NL2020545B1 NL2020545B1 NL2020545A NL2020545A NL2020545B1 NL 2020545 B1 NL2020545 B1 NL 2020545B1 NL 2020545 A NL2020545 A NL 2020545A NL 2020545 A NL2020545 A NL 2020545A NL 2020545 B1 NL2020545 B1 NL 2020545B1
- Authority
- NL
- Netherlands
- Prior art keywords
- thermoelectric
- elements
- metal
- active
- connecting metal
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 128
- 239000002184 metal Substances 0.000 claims abstract description 128
- 239000000463 material Substances 0.000 claims abstract description 79
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 41
- 239000010703 silicon Substances 0.000 claims abstract description 41
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 38
- 229910000676 Si alloy Inorganic materials 0.000 claims abstract description 17
- 239000007787 solid Substances 0.000 claims abstract description 7
- 239000002131 composite material Substances 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims description 38
- 238000006243 chemical reaction Methods 0.000 claims description 33
- 230000008569 process Effects 0.000 claims description 28
- 238000004519 manufacturing process Methods 0.000 claims description 27
- 239000007788 liquid Substances 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 13
- 239000000470 constituent Substances 0.000 claims description 11
- 238000002844 melting Methods 0.000 claims description 11
- 230000008018 melting Effects 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 238000007711 solidification Methods 0.000 claims description 9
- 230000008023 solidification Effects 0.000 claims description 9
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 239000011701 zinc Substances 0.000 claims description 8
- 229910052732 germanium Inorganic materials 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
- 239000011135 tin Substances 0.000 claims description 7
- 229910052725 zinc Inorganic materials 0.000 claims description 7
- 239000000155 melt Substances 0.000 claims description 5
- 229910052729 chemical element Inorganic materials 0.000 claims 10
- 238000005304 joining Methods 0.000 claims 5
- 239000012530 fluid Substances 0.000 claims 2
- 239000012071 phase Substances 0.000 abstract description 11
- 239000007790 solid phase Substances 0.000 abstract description 3
- 239000007791 liquid phase Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 18
- 150000002739 metals Chemical class 0.000 description 14
- 150000003376 silicon Chemical class 0.000 description 14
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 10
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 8
- FHTCLMVMBMJAEE-UHFFFAOYSA-N bis($l^{2}-silanylidene)manganese Chemical compound [Si]=[Mn]=[Si] FHTCLMVMBMJAEE-UHFFFAOYSA-N 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 238000001953 recrystallisation Methods 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 238000005275 alloying Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 229910021338 magnesium silicide Inorganic materials 0.000 description 3
- YTHCQFKNFVSQBC-UHFFFAOYSA-N magnesium silicide Chemical compound [Mg]=[Si]=[Mg] YTHCQFKNFVSQBC-UHFFFAOYSA-N 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000010587 phase diagram Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910021350 transition metal silicide Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- XNRNVYYTHRPBDD-UHFFFAOYSA-N [Si][Ag] Chemical compound [Si][Ag] XNRNVYYTHRPBDD-UHFFFAOYSA-N 0.000 description 2
- 229910002056 binary alloy Inorganic materials 0.000 description 2
- JRACIMOSEUMYIP-UHFFFAOYSA-N bis($l^{2}-silanylidene)iron Chemical compound [Si]=[Fe]=[Si] JRACIMOSEUMYIP-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 239000002028 Biomass Substances 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 230000005678 Seebeck effect Effects 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910021357 chromium silicide Inorganic materials 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000021615 conjugation Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
- H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Silicon Compounds (AREA)
- Powder Metallurgy (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL2020545A NL2020545B1 (en) | 2018-03-07 | 2018-03-07 | Thermoelectric conversion device |
| PCT/EP2019/055759 WO2019170826A1 (en) | 2018-03-07 | 2019-03-07 | Thermoelectric conversion device and method for manufacturing the same |
| EP19709484.0A EP3762978A1 (en) | 2018-03-07 | 2019-03-07 | Thermoelectric conversion device and method for manufacturing the same |
| JP2020570642A JP7596152B2 (ja) | 2018-03-07 | 2019-03-07 | 熱電変換デバイスおよびそれを製造するための方法 |
| US16/978,251 US11621385B2 (en) | 2018-03-07 | 2019-03-07 | Thermoelectric conversion device and method for manufacturing the same |
| RU2020132751A RU2781494C2 (ru) | 2018-03-07 | 2019-03-07 | Устройство термоэлектрического преобразования и способ его изготовления |
| CN201980017658.4A CN111937167A (zh) | 2018-03-07 | 2019-03-07 | 热电转换装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL2020545A NL2020545B1 (en) | 2018-03-07 | 2018-03-07 | Thermoelectric conversion device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL2020545B1 true NL2020545B1 (en) | 2019-09-13 |
Family
ID=62090002
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL2020545A NL2020545B1 (en) | 2018-03-07 | 2018-03-07 | Thermoelectric conversion device |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US11621385B2 (https=) |
| EP (1) | EP3762978A1 (https=) |
| JP (1) | JP7596152B2 (https=) |
| CN (1) | CN111937167A (https=) |
| NL (1) | NL2020545B1 (https=) |
| WO (1) | WO2019170826A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7592282B2 (ja) * | 2020-09-16 | 2024-12-02 | 株式会社テックスイージー | 熱電素子及びその製造方法 |
| JP7841404B2 (ja) * | 2022-10-13 | 2026-04-07 | 住友電気工業株式会社 | 熱電変換材料、熱電変換素子および熱電変換モジュール |
| CN116904916B (zh) * | 2023-06-21 | 2024-01-02 | 武汉理工大学 | 一种高温液相渗硅制备高硅硅钢片的方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08148726A (ja) * | 1994-09-22 | 1996-06-07 | Ngk Spark Plug Co Ltd | 熱電変換素子及びその製造方法 |
| JPH09100166A (ja) * | 1995-10-06 | 1997-04-15 | Tokuyama Corp | 複合焼結体 |
| JPH1022530A (ja) * | 1996-07-01 | 1998-01-23 | Sumitomo Special Metals Co Ltd | 熱電変換素子 |
| EP0969526A1 (en) * | 1997-12-27 | 2000-01-05 | Sumitomo Special Metals Company Limited | Thermoelectric element |
| US20030091092A1 (en) * | 2000-06-21 | 2003-05-15 | Christine Engel | Thermoelectric component |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02128425A (ja) * | 1988-11-07 | 1990-05-16 | Ricoh Co Ltd | 半導体装置の製造方法 |
| JPH1168172A (ja) * | 1997-08-11 | 1999-03-09 | Ngk Insulators Ltd | シリコン−ゲルマニウム系材料の接合方法および熱電変換モジュールの製造方法ならびに熱電変換モジュール |
| JP2002094131A (ja) * | 2000-09-13 | 2002-03-29 | Sumitomo Special Metals Co Ltd | 熱電変換素子 |
| JP4570071B2 (ja) | 2004-04-30 | 2010-10-27 | 日立粉末冶金株式会社 | 熱電変換モジュール及びその製造方法 |
| US8309844B2 (en) * | 2007-08-29 | 2012-11-13 | Ferro Corporation | Thick film pastes for fire through applications in solar cells |
| JP5881066B2 (ja) | 2010-11-30 | 2016-03-09 | 学校法人東京理科大学 | 熱電変換素子及び熱電変換モジュール |
| DE102012017556A1 (de) * | 2011-09-08 | 2013-03-14 | Hitachi Chemical Co., Ltd. | Thermoelektrisches konvertermodul und herstellungsverfahren dafür |
| US8841539B2 (en) * | 2012-03-25 | 2014-09-23 | Fayetteville State University | High efficiency thermoelectric device |
| JP2013201382A (ja) | 2012-03-26 | 2013-10-03 | Nagoya Univ | 熱電変換モジュール及びその製造方法 |
| JP6115047B2 (ja) * | 2012-09-04 | 2017-04-19 | 日立化成株式会社 | 熱電変換モジュールおよびその製造方法 |
-
2018
- 2018-03-07 NL NL2020545A patent/NL2020545B1/en active
-
2019
- 2019-03-07 EP EP19709484.0A patent/EP3762978A1/en active Pending
- 2019-03-07 JP JP2020570642A patent/JP7596152B2/ja active Active
- 2019-03-07 US US16/978,251 patent/US11621385B2/en active Active
- 2019-03-07 WO PCT/EP2019/055759 patent/WO2019170826A1/en not_active Ceased
- 2019-03-07 CN CN201980017658.4A patent/CN111937167A/zh active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08148726A (ja) * | 1994-09-22 | 1996-06-07 | Ngk Spark Plug Co Ltd | 熱電変換素子及びその製造方法 |
| JPH09100166A (ja) * | 1995-10-06 | 1997-04-15 | Tokuyama Corp | 複合焼結体 |
| JPH1022530A (ja) * | 1996-07-01 | 1998-01-23 | Sumitomo Special Metals Co Ltd | 熱電変換素子 |
| EP0969526A1 (en) * | 1997-12-27 | 2000-01-05 | Sumitomo Special Metals Company Limited | Thermoelectric element |
| US20030091092A1 (en) * | 2000-06-21 | 2003-05-15 | Christine Engel | Thermoelectric component |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7596152B2 (ja) | 2024-12-09 |
| US11621385B2 (en) | 2023-04-04 |
| CN111937167A (zh) | 2020-11-13 |
| US20200411741A1 (en) | 2020-12-31 |
| EP3762978A1 (en) | 2021-01-13 |
| JP2021517366A (ja) | 2021-07-15 |
| WO2019170826A1 (en) | 2019-09-12 |
| RU2020132751A (ru) | 2022-04-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103000798B (zh) | 热电转换模块及其制造方法 | |
| EP1324400A1 (en) | Thermoelectric conversion element | |
| NL2020545B1 (en) | Thermoelectric conversion device | |
| JP5224430B2 (ja) | パワー半導体モジュール | |
| US20090004500A1 (en) | Multilayer preform for fast transient liquid phase bonding | |
| WO2017136793A1 (en) | Electrode structure for magnesium silicide-based bulk materials to prevent elemental migration for long term reliability | |
| JP2009147111A (ja) | 接合材、その製造方法および半導体装置 | |
| KR101766197B1 (ko) | 비정질 및 발열 접합재를 이용한 열전소자 및 그 제조방법 | |
| JP6820084B2 (ja) | 熱電モジュール | |
| JP2021517366A5 (https=) | ||
| Choi et al. | Reliable low-temperature die attach process using Ag/Sn/Ag sandwich structure for high-temperature semiconductor devices | |
| KR20180022611A (ko) | 열전소자 및 이를 포함하는 열전모듈 | |
| JP6690124B2 (ja) | 熱電変換モジュール及びその製造方法 | |
| JP2008515212A (ja) | 熱電材料の接合 | |
| RU2781494C2 (ru) | Устройство термоэлектрического преобразования и способ его изготовления | |
| NL2017871B1 (en) | Thermoelectric conversion device | |
| JP7506894B2 (ja) | 熱電変換素子とその製造方法、および熱電変換デバイス | |
| JP6156693B2 (ja) | 半導体装置の製造方法 | |
| TWI619274B (zh) | 熱電材料模組之製備方法 | |
| RU2564685C1 (ru) | Способ сплавления | |
| JP2008072006A (ja) | 接合体 | |
| KR102844508B1 (ko) | 금속매개층을 포함하는 열전소자 및 이의 접합방법 | |
| Ngan et al. | Bismuth Telluride Modules | |
| WO2015019677A1 (ja) | 半導体装置の製造方法 | |
| Liu et al. | Materials in high power semiconductor laser packaging |