JP7517149B2 - 感光性樹脂組成物、感光性樹脂シート、硬化膜、硬化膜の製造方法、有機ｅｌ表示装置、および電子部品 - Google Patents

感光性樹脂組成物、感光性樹脂シート、硬化膜、硬化膜の製造方法、有機ｅｌ表示装置、および電子部品 Download PDF

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JP7517149B2
JP7517149B2 JP2020513935A JP2020513935A JP7517149B2 JP 7517149 B2 JP7517149 B2 JP 7517149B2 JP 2020513935 A JP2020513935 A JP 2020513935A JP 2020513935 A JP2020513935 A JP 2020513935A JP 7517149 B2 JP7517149 B2 JP 7517149B2
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photosensitive resin
resin composition
film
compound
cured film
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JPWO2020184326A5 (https=
JPWO2020184326A1 (https=
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悠佑 小森
岳 鷲見
一登 三好
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Toray Industries Inc
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Toray Industries Inc
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • Electroluminescent Light Sources (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Materials For Photolithography (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2020513935A 2019-03-14 2020-03-04 感光性樹脂組成物、感光性樹脂シート、硬化膜、硬化膜の製造方法、有機ｅｌ表示装置、および電子部品 Active JP7517149B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019046742 2019-03-14
JP2019046742 2019-03-14
PCT/JP2020/009104 WO2020184326A1 (ja) 2019-03-14 2020-03-04 感光性樹脂組成物、感光性樹脂シート、硬化膜、硬化膜の製造方法、有機ｅｌ表示装置、および電子部品

Publications (3)

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JPWO2020184326A1 JPWO2020184326A1 (https=) 2020-09-17
JPWO2020184326A5 JPWO2020184326A5 (https=) 2022-12-19
JP7517149B2 true JP7517149B2 (ja) 2024-07-17

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US (1) US11953830B2 (https=)
JP (1) JP7517149B2 (https=)
KR (1) KR102813261B1 (https=)
CN (1) CN113544585B (https=)
TW (1) TWI832989B (https=)
WO (1) WO2020184326A1 (https=)

Families Citing this family (5)

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Publication number Priority date Publication date Assignee Title
KR20240044383A (ko) * 2021-08-06 2024-04-04 도레이 카부시키가이샤 크산텐 화합물, 수지 조성물, 경화물, 경화물의 제조 방법, 유기 el 표시 장치 및 표시 장치
KR20230057969A (ko) 2021-10-22 2023-05-02 주식회사 엘지화학 수지 중합 반응 장치 및 수지 토출 방법
CN114890873B (zh) * 2022-03-18 2024-03-19 上海邃铸科技有限公司 一种组合物以及提高酰亚胺化率的方法
JP2024048223A (ja) * 2022-09-27 2024-04-08 Jsr株式会社 感光性樹脂組成物、レジストパターン膜の製造方法、およびメッキ造形物の製造方法
CN119895367A (zh) * 2022-12-20 2025-04-25 东丽株式会社 布线基板、遮光层形成用正型感光性树脂组合物、遮光层转印膜及布线基板的制造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017170600A1 (ja) 2016-03-31 2017-10-05 旭化成株式会社 感光性樹脂組成物、硬化レリーフパターンの製造方法及び半導体装置

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Publication number Priority date Publication date Assignee Title
JP5640413B2 (ja) * 2010-03-19 2014-12-17 東レ株式会社 ポジ型感光性樹脂組成物
JP6212979B2 (ja) * 2013-06-21 2017-10-18 東レ株式会社 樹脂組成物
WO2017217292A1 (ja) * 2016-06-16 2017-12-21 東レ株式会社 感光性樹脂組成物、感光性シート、硬化膜、素子、有機ｅｌ表示装置、半導体電子部品、半導体装置および有機ｅｌ表示装置の製造方法
US11163234B2 (en) 2016-08-22 2021-11-02 Asahi Kasei Kabushiki Kaisha Photosensitive resin composition and method for producing cured relief pattern
KR102341494B1 (ko) 2016-11-02 2021-12-23 도레이 카부시키가이샤 수지 조성물, 수지 시트, 경화막, 유기 el 표시 장치, 반도체 전자 부품, 반도체 장치 및 유기 el 표시 장치의 제조 방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017170600A1 (ja) 2016-03-31 2017-10-05 旭化成株式会社 感光性樹脂組成物、硬化レリーフパターンの製造方法及び半導体装置

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Publication number Publication date
TWI832989B (zh) 2024-02-21
CN113544585A (zh) 2021-10-22
US20220155680A1 (en) 2022-05-19
US11953830B2 (en) 2024-04-09
TW202106760A (zh) 2021-02-16
WO2020184326A1 (ja) 2020-09-17
CN113544585B (zh) 2024-10-22
KR20210141469A (ko) 2021-11-23
JPWO2020184326A1 (https=) 2020-09-17
KR102813261B1 (ko) 2025-05-28

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