JP7484903B2 - キャパシタ - Google Patents

キャパシタ Download PDF

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Publication number
JP7484903B2
JP7484903B2 JP2021520060A JP2021520060A JP7484903B2 JP 7484903 B2 JP7484903 B2 JP 7484903B2 JP 2021520060 A JP2021520060 A JP 2021520060A JP 2021520060 A JP2021520060 A JP 2021520060A JP 7484903 B2 JP7484903 B2 JP 7484903B2
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JP
Japan
Prior art keywords
electrode
capacitor
terminal electrode
via hole
dielectric film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021520060A
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English (en)
Japanese (ja)
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JPWO2020235175A1 (https=
JPWO2020235175A5 (https=
Inventor
武史 香川
真臣 原田
弘 松原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Publication of JPWO2020235175A1 publication Critical patent/JPWO2020235175A1/ja
Publication of JPWO2020235175A5 publication Critical patent/JPWO2020235175A5/ja
Application granted granted Critical
Publication of JP7484903B2 publication Critical patent/JP7484903B2/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/228—Terminals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Ceramic Capacitors (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2021520060A 2019-05-21 2020-03-03 キャパシタ Active JP7484903B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019095379 2019-05-21
JP2019095379 2019-05-21
PCT/JP2020/008963 WO2020235175A1 (ja) 2019-05-21 2020-03-03 キャパシタ

Publications (3)

Publication Number Publication Date
JPWO2020235175A1 JPWO2020235175A1 (https=) 2020-11-26
JPWO2020235175A5 JPWO2020235175A5 (https=) 2022-09-05
JP7484903B2 true JP7484903B2 (ja) 2024-05-16

Family

ID=73458757

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021520060A Active JP7484903B2 (ja) 2019-05-21 2020-03-03 キャパシタ

Country Status (4)

Country Link
US (1) US12432945B2 (https=)
JP (1) JP7484903B2 (https=)
CN (1) CN113841230A (https=)
WO (1) WO2020235175A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250329499A1 (en) * 2022-06-27 2025-10-23 Tdk Corporation Thin film capacitor and electronic circuit having the same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009010114A (ja) 2007-06-27 2009-01-15 Murata Mfg Co Ltd 誘電体薄膜キャパシタ
JP2017195322A (ja) 2016-04-22 2017-10-26 ローム株式会社 チップコンデンサ
WO2018003445A1 (ja) 2016-06-28 2018-01-04 株式会社村田製作所 キャパシタ
WO2019021827A1 (ja) 2017-07-26 2019-01-31 株式会社村田製作所 キャパシタ
WO2019026641A1 (ja) 2017-07-31 2019-02-07 株式会社村田製作所 薄膜コンデンサ及びその製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3257532B2 (ja) * 1992-07-27 2002-02-18 株式会社村田製作所 積層電子部品の製造方法およびその特性測定方法
EP1182708A3 (en) * 2000-08-18 2002-03-27 Texas Instruments Incorporated High capacitance damascene capacitor
JP2003188265A (ja) * 2001-12-19 2003-07-04 Matsushita Electric Ind Co Ltd Ｍｉｍ型容量素子の製造方法
KR100684438B1 (ko) * 2004-08-06 2007-02-16 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조 방법
JP4998262B2 (ja) * 2005-07-05 2012-08-15 富士通セミコンダクター株式会社 半導体装置及びその製造方法
CN100485931C (zh) * 2006-01-19 2009-05-06 力晶半导体股份有限公司 半导体元件及其制造方法
CN101192568A (zh) * 2006-11-24 2008-06-04 和舰科技(苏州)有限公司 集成电路中“金属-绝缘体-金属”电容器结构及其制造方法
JP4450071B2 (ja) * 2007-12-28 2010-04-14 Ｔｄｋ株式会社 電子部品
JP2009295925A (ja) * 2008-06-09 2009-12-17 Tdk Corp トレンチ型コンデンサ及びその製造方法
US8379365B2 (en) * 2009-04-28 2013-02-19 Taiwan Semiconductor Manufacturing Company, Ltd. Metal oxide metal capacitor with slot vias
CN102576608B (zh) * 2009-09-30 2015-06-03 株式会社半导体能源研究所 氧化还原电容器以及其制造方法
US8896521B2 (en) * 2012-04-24 2014-11-25 Qualcomm Mems Technologies, Inc. Metal-insulator-metal capacitors on glass substrates
US10607779B2 (en) 2016-04-22 2020-03-31 Rohm Co., Ltd. Chip capacitor having capacitor region directly below external electrode
US10468187B2 (en) * 2016-08-05 2019-11-05 Samsung Electro-Mechanics Co., Ltd. Thin-film ceramic capacitor having capacitance forming portions separated by separation slit

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009010114A (ja) 2007-06-27 2009-01-15 Murata Mfg Co Ltd 誘電体薄膜キャパシタ
JP2017195322A (ja) 2016-04-22 2017-10-26 ローム株式会社 チップコンデンサ
WO2018003445A1 (ja) 2016-06-28 2018-01-04 株式会社村田製作所 キャパシタ
WO2019021827A1 (ja) 2017-07-26 2019-01-31 株式会社村田製作所 キャパシタ
WO2019026641A1 (ja) 2017-07-31 2019-02-07 株式会社村田製作所 薄膜コンデンサ及びその製造方法

Also Published As

Publication number Publication date
US20220059646A1 (en) 2022-02-24
CN113841230A (zh) 2021-12-24
US12432945B2 (en) 2025-09-30
JPWO2020235175A1 (https=) 2020-11-26
WO2020235175A1 (ja) 2020-11-26

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