JPWO2020235175A1 - - Google Patents
Info
- Publication number
- JPWO2020235175A1 JPWO2020235175A1 JP2021520060A JP2021520060A JPWO2020235175A1 JP WO2020235175 A1 JPWO2020235175 A1 JP WO2020235175A1 JP 2021520060 A JP2021520060 A JP 2021520060A JP 2021520060 A JP2021520060 A JP 2021520060A JP WO2020235175 A1 JPWO2020235175 A1 JP WO2020235175A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Ceramic Capacitors (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019095379 | 2019-05-21 | ||
| JP2019095379 | 2019-05-21 | ||
| PCT/JP2020/008963 WO2020235175A1 (ja) | 2019-05-21 | 2020-03-03 | キャパシタ |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2020235175A1 true JPWO2020235175A1 (https=) | 2020-11-26 |
| JPWO2020235175A5 JPWO2020235175A5 (https=) | 2022-09-05 |
| JP7484903B2 JP7484903B2 (ja) | 2024-05-16 |
Family
ID=73458757
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021520060A Active JP7484903B2 (ja) | 2019-05-21 | 2020-03-03 | キャパシタ |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US12432945B2 (https=) |
| JP (1) | JP7484903B2 (https=) |
| CN (1) | CN113841230A (https=) |
| WO (1) | WO2020235175A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20250329499A1 (en) * | 2022-06-27 | 2025-10-23 | Tdk Corporation | Thin film capacitor and electronic circuit having the same |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009010114A (ja) * | 2007-06-27 | 2009-01-15 | Murata Mfg Co Ltd | 誘電体薄膜キャパシタ |
| JP2017195322A (ja) * | 2016-04-22 | 2017-10-26 | ローム株式会社 | チップコンデンサ |
| WO2018003445A1 (ja) * | 2016-06-28 | 2018-01-04 | 株式会社村田製作所 | キャパシタ |
| WO2019021827A1 (ja) * | 2017-07-26 | 2019-01-31 | 株式会社村田製作所 | キャパシタ |
| WO2019026641A1 (ja) * | 2017-07-31 | 2019-02-07 | 株式会社村田製作所 | 薄膜コンデンサ及びその製造方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3257532B2 (ja) * | 1992-07-27 | 2002-02-18 | 株式会社村田製作所 | 積層電子部品の製造方法およびその特性測定方法 |
| EP1182708A3 (en) * | 2000-08-18 | 2002-03-27 | Texas Instruments Incorporated | High capacitance damascene capacitor |
| JP2003188265A (ja) * | 2001-12-19 | 2003-07-04 | Matsushita Electric Ind Co Ltd | Ｍｉｍ型容量素子の製造方法 |
| KR100684438B1 (ko) * | 2004-08-06 | 2007-02-16 | 동부일렉트로닉스 주식회사 | 반도체 소자 및 그 제조 방법 |
| JP4998262B2 (ja) * | 2005-07-05 | 2012-08-15 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
| CN100485931C (zh) * | 2006-01-19 | 2009-05-06 | 力晶半导体股份有限公司 | 半导体元件及其制造方法 |
| CN101192568A (zh) * | 2006-11-24 | 2008-06-04 | 和舰科技(苏州)有限公司 | 集成电路中“金属-绝缘体-金属”电容器结构及其制造方法 |
| JP4450071B2 (ja) * | 2007-12-28 | 2010-04-14 | Ｔｄｋ株式会社 | 電子部品 |
| JP2009295925A (ja) * | 2008-06-09 | 2009-12-17 | Tdk Corp | トレンチ型コンデンサ及びその製造方法 |
| US8379365B2 (en) * | 2009-04-28 | 2013-02-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal oxide metal capacitor with slot vias |
| CN102576608B (zh) * | 2009-09-30 | 2015-06-03 | 株式会社半导体能源研究所 | 氧化还原电容器以及其制造方法 |
| US8896521B2 (en) * | 2012-04-24 | 2014-11-25 | Qualcomm Mems Technologies, Inc. | Metal-insulator-metal capacitors on glass substrates |
| US10607779B2 (en) | 2016-04-22 | 2020-03-31 | Rohm Co., Ltd. | Chip capacitor having capacitor region directly below external electrode |
| US10468187B2 (en) * | 2016-08-05 | 2019-11-05 | Samsung Electro-Mechanics Co., Ltd. | Thin-film ceramic capacitor having capacitance forming portions separated by separation slit |
-
2020
- 2020-03-03 WO PCT/JP2020/008963 patent/WO2020235175A1/ja not_active Ceased
- 2020-03-03 JP JP2021520060A patent/JP7484903B2/ja active Active
- 2020-03-03 CN CN202080037071.2A patent/CN113841230A/zh active Pending
-
2021
- 2021-11-08 US US17/521,206 patent/US12432945B2/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009010114A (ja) * | 2007-06-27 | 2009-01-15 | Murata Mfg Co Ltd | 誘電体薄膜キャパシタ |
| JP2017195322A (ja) * | 2016-04-22 | 2017-10-26 | ローム株式会社 | チップコンデンサ |
| WO2018003445A1 (ja) * | 2016-06-28 | 2018-01-04 | 株式会社村田製作所 | キャパシタ |
| WO2019021827A1 (ja) * | 2017-07-26 | 2019-01-31 | 株式会社村田製作所 | キャパシタ |
| WO2019026641A1 (ja) * | 2017-07-31 | 2019-02-07 | 株式会社村田製作所 | 薄膜コンデンサ及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20220059646A1 (en) | 2022-02-24 |
| CN113841230A (zh) | 2021-12-24 |
| US12432945B2 (en) | 2025-09-30 |
| JP7484903B2 (ja) | 2024-05-16 |
| WO2020235175A1 (ja) | 2020-11-26 |
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