CN113841230A - 电容器 - Google Patents

电容器 Download PDF

Info

Publication number
CN113841230A
CN113841230A CN202080037071.2A CN202080037071A CN113841230A CN 113841230 A CN113841230 A CN 113841230A CN 202080037071 A CN202080037071 A CN 202080037071A CN 113841230 A CN113841230 A CN 113841230A
Authority
CN
China
Prior art keywords
capacitor
electrode
via hole
dielectric film
terminal electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202080037071.2A
Other languages
English (en)
Chinese (zh)
Inventor
香川武史
原田真臣
松原弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Publication of CN113841230A publication Critical patent/CN113841230A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/228—Terminals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Ceramic Capacitors (AREA)
  • Semiconductor Integrated Circuits (AREA)
CN202080037071.2A 2019-05-21 2020-03-03 电容器 Pending CN113841230A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019-095379 2019-05-21
JP2019095379 2019-05-21
PCT/JP2020/008963 WO2020235175A1 (ja) 2019-05-21 2020-03-03 キャパシタ

Publications (1)

Publication Number Publication Date
CN113841230A true CN113841230A (zh) 2021-12-24

Family

ID=73458757

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080037071.2A Pending CN113841230A (zh) 2019-05-21 2020-03-03 电容器

Country Status (4)

Country Link
US (1) US12432945B2 (https=)
JP (1) JP7484903B2 (https=)
CN (1) CN113841230A (https=)
WO (1) WO2020235175A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250329499A1 (en) * 2022-06-27 2025-10-23 Tdk Corporation Thin film capacitor and electronic circuit having the same

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003188265A (ja) * 2001-12-19 2003-07-04 Matsushita Electric Ind Co Ltd Ｍｉｍ型容量素子の製造方法
CN101005066A (zh) * 2006-01-19 2007-07-25 力晶半导体股份有限公司 半导体元件及其制造方法
CN101192568A (zh) * 2006-11-24 2008-06-04 和舰科技(苏州)有限公司 集成电路中“金属-绝缘体-金属”电容器结构及其制造方法
JP2009010114A (ja) * 2007-06-27 2009-01-15 Murata Mfg Co Ltd 誘電体薄膜キャパシタ
JP2009295925A (ja) * 2008-06-09 2009-12-17 Tdk Corp トレンチ型コンデンサ及びその製造方法
JP2017195322A (ja) * 2016-04-22 2017-10-26 ローム株式会社 チップコンデンサ
WO2018003445A1 (ja) * 2016-06-28 2018-01-04 株式会社村田製作所 キャパシタ
WO2019021827A1 (ja) * 2017-07-26 2019-01-31 株式会社村田製作所 キャパシタ

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3257532B2 (ja) * 1992-07-27 2002-02-18 株式会社村田製作所 積層電子部品の製造方法およびその特性測定方法
EP1182708A3 (en) * 2000-08-18 2002-03-27 Texas Instruments Incorporated High capacitance damascene capacitor
KR100684438B1 (ko) * 2004-08-06 2007-02-16 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조 방법
JP4998262B2 (ja) * 2005-07-05 2012-08-15 富士通セミコンダクター株式会社 半導体装置及びその製造方法
JP4450071B2 (ja) * 2007-12-28 2010-04-14 Ｔｄｋ株式会社 電子部品
US8379365B2 (en) * 2009-04-28 2013-02-19 Taiwan Semiconductor Manufacturing Company, Ltd. Metal oxide metal capacitor with slot vias
CN102576608B (zh) * 2009-09-30 2015-06-03 株式会社半导体能源研究所 氧化还原电容器以及其制造方法
US8896521B2 (en) * 2012-04-24 2014-11-25 Qualcomm Mems Technologies, Inc. Metal-insulator-metal capacitors on glass substrates
US10607779B2 (en) 2016-04-22 2020-03-31 Rohm Co., Ltd. Chip capacitor having capacitor region directly below external electrode
US10468187B2 (en) * 2016-08-05 2019-11-05 Samsung Electro-Mechanics Co., Ltd. Thin-film ceramic capacitor having capacitance forming portions separated by separation slit
WO2019026641A1 (ja) * 2017-07-31 2019-02-07 株式会社村田製作所 薄膜コンデンサ及びその製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003188265A (ja) * 2001-12-19 2003-07-04 Matsushita Electric Ind Co Ltd Ｍｉｍ型容量素子の製造方法
CN101005066A (zh) * 2006-01-19 2007-07-25 力晶半导体股份有限公司 半导体元件及其制造方法
CN101192568A (zh) * 2006-11-24 2008-06-04 和舰科技(苏州)有限公司 集成电路中“金属-绝缘体-金属”电容器结构及其制造方法
JP2009010114A (ja) * 2007-06-27 2009-01-15 Murata Mfg Co Ltd 誘電体薄膜キャパシタ
JP2009295925A (ja) * 2008-06-09 2009-12-17 Tdk Corp トレンチ型コンデンサ及びその製造方法
JP2017195322A (ja) * 2016-04-22 2017-10-26 ローム株式会社 チップコンデンサ
WO2018003445A1 (ja) * 2016-06-28 2018-01-04 株式会社村田製作所 キャパシタ
WO2019021827A1 (ja) * 2017-07-26 2019-01-31 株式会社村田製作所 キャパシタ

Also Published As

Publication number Publication date
US20220059646A1 (en) 2022-02-24
US12432945B2 (en) 2025-09-30
JP7484903B2 (ja) 2024-05-16
JPWO2020235175A1 (https=) 2020-11-26
WO2020235175A1 (ja) 2020-11-26

Similar Documents

Publication Publication Date Title
JP7197001B2 (ja) キャパシタ
US11101072B2 (en) Capacitor with limited substrate capacitance
US8351185B2 (en) Electronic component and manufacturing method thereof
WO2019117073A1 (ja) ガラス配線基板、その製造方法及び半導体装置
JP6579502B2 (ja) キャパシタ
JP2017195322A (ja) チップコンデンサ
JP2018133361A (ja) 電子部品内蔵基板
JP7439392B2 (ja) キャパシタ
JP6788847B2 (ja) キャパシタ
CN113841230A (zh) 电容器
JP2008504700A (ja) 高信頼性のはんだ付けコンタクトを備えた電気的な多層構成素子
US10903003B2 (en) Capacitor component
JP2018133362A (ja) 電子部品内蔵基板
US20170338042A1 (en) Thin-film capacitor and method of manufacturing the same
JP2018133363A (ja) 電子部品内蔵基板及び基板実装構造体
KR101901708B1 (ko) 적층 세라믹 커패시터 및 그의 제조 방법
WO2019208221A1 (ja) キャパシタ集合体
JP4206293B2 (ja) 薄膜コンデンサおよびそれを用いたコンデンサ基板
WO2018151028A1 (ja) コンデンサ
US20240071691A1 (en) Semiconductor device
CN121264190A (zh) 半导体装置
US10418179B2 (en) Multilayer thin-film capacitor
JP2001345232A (ja) 薄膜電子部品および基板

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination