JP7482240B2 - 透明電極およびその作製方法、ならびに透明電極を用いた電子デバイス - Google Patents

透明電極およびその作製方法、ならびに透明電極を用いた電子デバイス Download PDF

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JP7482240B2
JP7482240B2 JP2022552396A JP2022552396A JP7482240B2 JP 7482240 B2 JP7482240 B2 JP 7482240B2 JP 2022552396 A JP2022552396 A JP 2022552396A JP 2022552396 A JP2022552396 A JP 2022552396A JP 7482240 B2 JP7482240 B2 JP 7482240B2
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transparent electrode
metal grid
metal
transparent
transparent substrate
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JPWO2022190336A1 (https=
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勝之 内藤
直美 信田
武志 五反田
穣 齊田
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Toshiba Corp
Toshiba Energy Systems and Solutions Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/215—Geometries of grid contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H10K30/83—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising arrangements for extracting the current from the cell, e.g. metal finger grid systems to reduce the serial resistance of transparent electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
    • H01G9/2009—Solid electrolytes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Non-Insulated Conductors (AREA)
  • Electroluminescent Light Sources (AREA)
  • Photovoltaic Devices (AREA)
JP2022552396A 2021-03-12 2021-03-12 透明電極およびその作製方法、ならびに透明電極を用いた電子デバイス Active JP7482240B2 (ja)

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PCT/JP2021/009945 WO2022190336A1 (ja) 2021-03-12 2021-03-12 透明電極およびその作製方法、ならびに透明電極を用いた電子デバイス

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JPWO2022190336A1 JPWO2022190336A1 (https=) 2022-09-15
JP7482240B2 true JP7482240B2 (ja) 2024-05-13

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US (1) US20220416100A1 (https=)
EP (1) EP4307395A4 (https=)
JP (1) JP7482240B2 (https=)
CN (1) CN115349179A (https=)
WO (1) WO2022190336A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7198389B2 (ja) * 2020-08-04 2022-12-28 株式会社東芝 電極評価方法
JPWO2024009411A1 (https=) 2022-07-05 2024-01-11

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010001591A1 (ja) 2008-07-04 2010-01-07 戸田工業株式会社 透明導電性転写版の製造方法、透明導電性転写版、透明導電性転写版を用いた透明導電性基材の製造方法、透明導電性基材、および透明導電性基材を用いた成形体
WO2011055663A1 (ja) 2009-11-04 2011-05-12 コニカミノルタホールディングス株式会社 透明電極および有機電子デバイス
JP2011116925A (ja) 2009-12-04 2011-06-16 Nihon Sentan Kagaku Kk 共役二重結合ポリマーとポリスチレンスルホン酸塩ないしはポリビニルスルホン酸塩との複合体からなる導電性組成物分散液の製造方法
JP2011157535A (ja) 2010-01-29 2011-08-18 Nihon Sentan Kagaku Kk 導電性組成物の製造方法
WO2012093530A1 (ja) 2011-01-06 2012-07-12 リンテック株式会社 透明導電性積層体および有機薄膜デバイス
JP2013542546A (ja) 2010-03-08 2013-11-21 ウィリアム・マーシュ・ライス・ユニバーシティ グラフェン／格子混成構造に基づいた透明電極
US20160103508A1 (en) 2014-10-14 2016-04-14 Interface Optoelectronic (Shenzhen) Co., Ltd. Transparent conductive film, method for making the same, and touch-sensitive screen using the same
JP2017080951A (ja) 2015-10-26 2017-05-18 日東電工株式会社 ハードコートフィルムおよび透明導電性フィルム
US20180248052A1 (en) 2015-01-08 2018-08-30 Korea Research Institute Of Chemical Technology Method for manufacturing device comprising inorganic/organic hybrid perovskite compound film and device comprising inorganic/organic hybrid perovskite compound film

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JP4479287B2 (ja) * 2004-03-11 2010-06-09 株式会社日立製作所 導電性ガラスおよびそれを用いた光電変換デバイス
FR2924274B1 (fr) * 2007-11-22 2012-11-30 Saint Gobain Substrat porteur d'une electrode, dispositif electroluminescent organique l'incorporant, et sa fabrication
JP2011228224A (ja) * 2010-04-23 2011-11-10 Sony Corp 透明電極基板および光電変換素子
JP2012080091A (ja) * 2010-09-07 2012-04-19 Fujifilm Corp 透明導電フィルム、その製造方法、それを用いた有機薄膜太陽電池
JP6142870B2 (ja) 2012-04-05 2017-06-07 コニカミノルタ株式会社 有機光電変換素子およびこれを用いた太陽電池
JP2014216175A (ja) * 2013-04-25 2014-11-17 リンテック株式会社 透明導電性積層体の製造方法及び透明導電性積層体
CN108349216A (zh) * 2015-11-06 2018-07-31 琳得科株式会社 透明导电层叠层用膜、其制造方法、以及透明导电膜
KR101978886B1 (ko) * 2016-10-31 2019-05-15 울산과학기술원 투명 전극의 제조 방법 및 투명 전극을 포함한 전자 기판
CN106782769B (zh) * 2016-11-22 2018-06-29 华中科技大学 低粗糙度低方阻的柔性透明导电复合薄膜及其制备方法
US11804558B2 (en) * 2017-12-29 2023-10-31 Maxeon Solar Pte. Ltd. Conductive contacts for polycrystalline silicon features of solar cells
CN109486370A (zh) * 2018-11-13 2019-03-19 哈尔滨工业大学 一种具有改性pedot:pss保护层的金属网格透明电极及其制备方法
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010001591A1 (ja) 2008-07-04 2010-01-07 戸田工業株式会社 透明導電性転写版の製造方法、透明導電性転写版、透明導電性転写版を用いた透明導電性基材の製造方法、透明導電性基材、および透明導電性基材を用いた成形体
WO2011055663A1 (ja) 2009-11-04 2011-05-12 コニカミノルタホールディングス株式会社 透明電極および有機電子デバイス
JP2011116925A (ja) 2009-12-04 2011-06-16 Nihon Sentan Kagaku Kk 共役二重結合ポリマーとポリスチレンスルホン酸塩ないしはポリビニルスルホン酸塩との複合体からなる導電性組成物分散液の製造方法
JP2011157535A (ja) 2010-01-29 2011-08-18 Nihon Sentan Kagaku Kk 導電性組成物の製造方法
JP2013542546A (ja) 2010-03-08 2013-11-21 ウィリアム・マーシュ・ライス・ユニバーシティ グラフェン／格子混成構造に基づいた透明電極
WO2012093530A1 (ja) 2011-01-06 2012-07-12 リンテック株式会社 透明導電性積層体および有機薄膜デバイス
US20160103508A1 (en) 2014-10-14 2016-04-14 Interface Optoelectronic (Shenzhen) Co., Ltd. Transparent conductive film, method for making the same, and touch-sensitive screen using the same
US20180248052A1 (en) 2015-01-08 2018-08-30 Korea Research Institute Of Chemical Technology Method for manufacturing device comprising inorganic/organic hybrid perovskite compound film and device comprising inorganic/organic hybrid perovskite compound film
JP2017080951A (ja) 2015-10-26 2017-05-18 日東電工株式会社 ハードコートフィルムおよび透明導電性フィルム

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JPWO2022190336A1 (https=) 2022-09-15
WO2022190336A1 (ja) 2022-09-15
EP4307395A1 (en) 2024-01-17
CN115349179A (zh) 2022-11-15
US20220416100A1 (en) 2022-12-29
EP4307395A4 (en) 2024-12-11

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