CN115349179A - 透明电极及其制造方法、以及使用透明电极的电子器件 - Google Patents

透明电极及其制造方法、以及使用透明电极的电子器件 Download PDF

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Publication number
CN115349179A
CN115349179A CN202180018129.3A CN202180018129A CN115349179A CN 115349179 A CN115349179 A CN 115349179A CN 202180018129 A CN202180018129 A CN 202180018129A CN 115349179 A CN115349179 A CN 115349179A
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CN
China
Prior art keywords
transparent electrode
metal
transparent
transparent substrate
metal grid
Prior art date
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Pending
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CN202180018129.3A
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English (en)
Chinese (zh)
Inventor
内藤胜之
信田直美
五反田武志
齐田穰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Energy Systems and Solutions Corp
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Toshiba Corp
Toshiba Energy Systems and Solutions Corp
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Publication date
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Publication of CN115349179A publication Critical patent/CN115349179A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/215—Geometries of grid contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H10K30/83—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising arrangements for extracting the current from the cell, e.g. metal finger grid systems to reduce the serial resistance of transparent electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
    • H01G9/2009—Solid electrolytes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Non-Insulated Conductors (AREA)
  • Electroluminescent Light Sources (AREA)
  • Photovoltaic Devices (AREA)
CN202180018129.3A 2021-03-12 2021-03-12 透明电极及其制造方法、以及使用透明电极的电子器件 Pending CN115349179A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/009945 WO2022190336A1 (ja) 2021-03-12 2021-03-12 透明電極およびその作製方法、ならびに透明電極を用いた電子デバイス

Publications (1)

Publication Number Publication Date
CN115349179A true CN115349179A (zh) 2022-11-15

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CN202180018129.3A Pending CN115349179A (zh) 2021-03-12 2021-03-12 透明电极及其制造方法、以及使用透明电极的电子器件

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Country Link
US (1) US20220416100A1 (https=)
EP (1) EP4307395A4 (https=)
JP (1) JP7482240B2 (https=)
CN (1) CN115349179A (https=)
WO (1) WO2022190336A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7198389B2 (ja) * 2020-08-04 2022-12-28 株式会社東芝 電極評価方法
JPWO2024009411A1 (https=) 2022-07-05 2024-01-11

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JP2005259478A (ja) * 2004-03-11 2005-09-22 Hitachi Ltd 導電性ガラスおよびそれを用いた光電変換デバイス
WO2011055663A1 (ja) * 2009-11-04 2011-05-12 コニカミノルタホールディングス株式会社 透明電極および有機電子デバイス
CN102290247A (zh) * 2010-04-23 2011-12-21 索尼公司 透明电极衬底和光电转换元件
CN103038835A (zh) * 2010-03-08 2013-04-10 威廉马歇莱思大学 基于石墨烯的透明电极和网格混合结构
JP2014216175A (ja) * 2013-04-25 2014-11-17 リンテック株式会社 透明導電性積層体の製造方法及び透明導電性積層体
CN106782769A (zh) * 2016-11-22 2017-05-31 华中科技大学 低粗糙度低方阻的柔性透明导电复合薄膜及其制备方法
CN108349216A (zh) * 2015-11-06 2018-07-31 琳得科株式会社 透明导电层叠层用膜、其制造方法、以及透明导电膜
CN109994554A (zh) * 2017-12-29 2019-07-09 太阳能公司 用于太阳能电池的多晶硅特征的导电触点
CN110459366A (zh) * 2019-07-30 2019-11-15 哈尔滨工业大学（深圳） 超高透光率电极的制备方法和电子皮肤、机器人

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JP5510320B2 (ja) * 2008-07-04 2014-06-04 戸田工業株式会社 成形用の透明導電性基材、その製造方法およびそれを用いた成形体
JP2011116925A (ja) * 2009-12-04 2011-06-16 Nihon Sentan Kagaku Kk 共役二重結合ポリマーとポリスチレンスルホン酸塩ないしはポリビニルスルホン酸塩との複合体からなる導電性組成物分散液の製造方法
JP2011157535A (ja) * 2010-01-29 2011-08-18 Nihon Sentan Kagaku Kk 導電性組成物の製造方法
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JPWO2012093530A1 (ja) * 2011-01-06 2014-06-09 リンテック株式会社 透明導電性積層体および有機薄膜デバイス
JP6142870B2 (ja) 2012-04-05 2017-06-07 コニカミノルタ株式会社 有機光電変換素子およびこれを用いた太陽電池
CN104407729B (zh) * 2014-10-14 2018-01-09 业成光电（深圳）有限公司 电子装置、触控屏、透明导电膜及透明导电膜的制备方法
US10593816B2 (en) * 2015-01-08 2020-03-17 Korea Research Institute Of Chemical Technology Method for manufacturing device comprising inorganic/organic hybrid perovskite compound film and device comprising inorganic/organic hybrid perovskite compound film
JP6571488B2 (ja) * 2015-10-26 2019-09-04 日東電工株式会社 ハードコートフィルムおよび透明導電性フィルム
KR101978886B1 (ko) * 2016-10-31 2019-05-15 울산과학기술원 투명 전극의 제조 방법 및 투명 전극을 포함한 전자 기판
CN109486370A (zh) * 2018-11-13 2019-03-19 哈尔滨工业大学 一种具有改性pedot:pss保护层的金属网格透明电极及其制备方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005259478A (ja) * 2004-03-11 2005-09-22 Hitachi Ltd 導電性ガラスおよびそれを用いた光電変換デバイス
WO2011055663A1 (ja) * 2009-11-04 2011-05-12 コニカミノルタホールディングス株式会社 透明電極および有機電子デバイス
CN103038835A (zh) * 2010-03-08 2013-04-10 威廉马歇莱思大学 基于石墨烯的透明电极和网格混合结构
CN102290247A (zh) * 2010-04-23 2011-12-21 索尼公司 透明电极衬底和光电转换元件
JP2014216175A (ja) * 2013-04-25 2014-11-17 リンテック株式会社 透明導電性積層体の製造方法及び透明導電性積層体
CN108349216A (zh) * 2015-11-06 2018-07-31 琳得科株式会社 透明导电层叠层用膜、其制造方法、以及透明导电膜
CN106782769A (zh) * 2016-11-22 2017-05-31 华中科技大学 低粗糙度低方阻的柔性透明导电复合薄膜及其制备方法
CN109994554A (zh) * 2017-12-29 2019-07-09 太阳能公司 用于太阳能电池的多晶硅特征的导电触点
CN110459366A (zh) * 2019-07-30 2019-11-15 哈尔滨工业大学（深圳） 超高透光率电极的制备方法和电子皮肤、机器人

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JPWO2022190336A1 (https=) 2022-09-15
WO2022190336A1 (ja) 2022-09-15
EP4307395A1 (en) 2024-01-17
JP7482240B2 (ja) 2024-05-13
US20220416100A1 (en) 2022-12-29
EP4307395A4 (en) 2024-12-11

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