JP7475337B2 - 動的水平化を備えた同軸リフト装置 - Google Patents

動的水平化を備えた同軸リフト装置 Download PDF

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Publication number
JP7475337B2
JP7475337B2 JP2021516574A JP2021516574A JP7475337B2 JP 7475337 B2 JP7475337 B2 JP 7475337B2 JP 2021516574 A JP2021516574 A JP 2021516574A JP 2021516574 A JP2021516574 A JP 2021516574A JP 7475337 B2 JP7475337 B2 JP 7475337B2
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Japan
Prior art keywords
pedestal
bottom bowl
lift
carrier
bowl
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JP2021516574A
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English (en)
Japanese (ja)
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JP2022502846A5 (https=
JP2022502846A (ja
JPWO2020068343A5 (https=
Inventor
ジェーソン エム． シャーラー，
ジェフリー チャールズ ブラニク，
アミット クマール バンサル，
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2022502846A5 publication Critical patent/JP2022502846A5/ja
Publication of JPWO2020068343A5 publication Critical patent/JPWO2020068343A5/ja
Priority to JP2024065841A priority Critical patent/JP7712418B2/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20221—Translation
    • H01J2237/20235—Z movement or adjustment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Forklifts And Lifting Vehicles (AREA)
  • Physical Vapour Deposition (AREA)
JP2021516574A 2018-09-28 2019-08-28 動的水平化を備えた同軸リフト装置 Active JP7475337B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024065841A JP7712418B2 (ja) 2018-09-28 2024-04-16 動的水平化を備えた同軸リフト装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862738869P 2018-09-28 2018-09-28
US62/738,869 2018-09-28
PCT/US2019/048529 WO2020068343A1 (en) 2018-09-28 2019-08-28 Coaxial lift device with dynamic leveling

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024065841A Division JP7712418B2 (ja) 2018-09-28 2024-04-16 動的水平化を備えた同軸リフト装置

Publications (4)

Publication Number Publication Date
JP2022502846A JP2022502846A (ja) 2022-01-11
JP2022502846A5 JP2022502846A5 (https=) 2022-09-05
JPWO2020068343A5 JPWO2020068343A5 (https=) 2022-09-05
JP7475337B2 true JP7475337B2 (ja) 2024-04-26

Family

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JP2021516574A Active JP7475337B2 (ja) 2018-09-28 2019-08-28 動的水平化を備えた同軸リフト装置
JP2024065841A Active JP7712418B2 (ja) 2018-09-28 2024-04-16 動的水平化を備えた同軸リフト装置

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JP2024065841A Active JP7712418B2 (ja) 2018-09-28 2024-04-16 動的水平化を備えた同軸リフト装置

Country Status (7)

Country Link
US (3) US11742235B2 (https=)
JP (2) JP7475337B2 (https=)
KR (2) KR102789697B1 (https=)
CN (2) CN117305815B (https=)
SG (1) SG11202101649WA (https=)
TW (2) TWI897025B (https=)
WO (1) WO2020068343A1 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102789697B1 (ko) * 2018-09-28 2025-03-31 어플라이드 머티어리얼스, 인코포레이티드 동적 레벨링을 갖는 동축 리프트 디바이스
WO2021225890A1 (en) * 2020-05-04 2021-11-11 Lam Research Corporation Increasing plasma uniformity in a receptacle
JP7488138B2 (ja) * 2020-07-07 2024-05-21 東京エレクトロン株式会社 真空処理装置、及び真空処理装置の制御方法
US11501957B2 (en) * 2020-09-03 2022-11-15 Applied Materials, Inc. Pedestal support design for precise chamber matching and process control
CN112736020B (zh) * 2020-12-31 2024-06-07 拓荆科技股份有限公司 晶圆支撑销升降装置
JP7664717B2 (ja) * 2021-03-12 2025-04-18 東京エレクトロン株式会社 真空処理装置および傾き調整方法
US12227847B2 (en) * 2021-03-31 2025-02-18 Applied Materials, Inc. Level monitoring and active adjustment of a substrate support assembly
JP7630004B2 (ja) * 2021-04-02 2025-02-14 アプライド マテリアルズ インコーポレイテッド 電界誘導される露光後ベークプロセス用のプロセスセル
KR102680985B1 (ko) 2022-06-16 2024-07-04 세메스 주식회사 회수 용기 승강 조립체 및 기판 처리 장치
KR102623522B1 (ko) 2022-06-16 2024-01-10 세메스 주식회사 회수 용기 승강 조립체 및 기판 처리 장치
US12405225B2 (en) * 2022-12-06 2025-09-02 Kla Corporation Lifter assembly with bellows for optical inspection system
US12428753B2 (en) * 2022-12-14 2025-09-30 Applied Materials, Inc. Lift assemblies, and related methods and components, for substrate processing chambers
US20250308862A1 (en) * 2024-03-27 2025-10-02 Applied Materials, Inc. Leveling systems and methods

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017122262A (ja) 2016-01-06 2017-07-13 株式会社アルバック 成膜方法
WO2018067297A1 (en) 2016-10-03 2018-04-12 Applied Materials, Inc. Dynamic leveling process heater lift

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3057094B2 (ja) * 1990-11-27 2000-06-26 株式会社東芝 基板加熱装置
US5791895A (en) * 1994-02-17 1998-08-11 Novellus Systems, Inc. Apparatus for thermal treatment of thin film wafer
JPH11297800A (ja) * 1998-04-09 1999-10-29 Nec Kyushu Ltd 半導体装置製造用装置
JP4255148B2 (ja) * 1998-08-06 2009-04-15 キヤノンアネルバ株式会社 パージガス導入機構および成膜装置
WO2002033729A2 (en) * 2000-10-16 2002-04-25 Tokyo Electron Limited Plasma reactor with reduced reaction chamber
US6730175B2 (en) 2002-01-22 2004-05-04 Applied Materials, Inc. Ceramic substrate support
JP4244555B2 (ja) * 2002-02-25 2009-03-25 東京エレクトロン株式会社 被処理体の支持機構
US6776849B2 (en) * 2002-03-15 2004-08-17 Asm America, Inc. Wafer holder with peripheral lift ring
US6800833B2 (en) 2002-03-29 2004-10-05 Mariusch Gregor Electromagnetically levitated substrate support
JP2003332309A (ja) * 2002-05-08 2003-11-21 Hitachi High-Technologies Corp 真空処理装置
US7009281B2 (en) * 2003-03-14 2006-03-07 Lam Corporation Small volume process chamber with hot inner surfaces
JP4173389B2 (ja) * 2003-03-19 2008-10-29 東京エレクトロン株式会社 プラズマ処理装置
US7001491B2 (en) * 2003-06-26 2006-02-21 Tokyo Electron Limited Vacuum-processing chamber-shield and multi-chamber pumping method
US7654221B2 (en) 2003-10-06 2010-02-02 Applied Materials, Inc. Apparatus for electroless deposition of metals onto semiconductor substrates
US20050230350A1 (en) 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
US20070221128A1 (en) * 2006-03-23 2007-09-27 Soo Young Choi Method and apparatus for improving uniformity of large-area substrates
US7858898B2 (en) * 2007-01-26 2010-12-28 Lam Research Corporation Bevel etcher with gap control
NL1036859A1 (nl) * 2008-04-29 2009-10-30 Asml Netherlands Bv Support structure, inspection apparatus, lithographic apparatus and methods for loading and unloading substrates.
US10224182B2 (en) * 2011-10-17 2019-03-05 Novellus Systems, Inc. Mechanical suppression of parasitic plasma in substrate processing chamber
US8895452B2 (en) * 2012-05-31 2014-11-25 Lam Research Corporation Substrate support providing gap height and planarization adjustment in plasma processing chamber
US20140263275A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Rotation enabled multifunctional heater-chiller pedestal
JP2014203975A (ja) * 2013-04-05 2014-10-27 大日本スクリーン製造株式会社 薄膜形成装置
JP6400977B2 (ja) * 2013-09-25 2018-10-03 芝浦メカトロニクス株式会社 スピン処理装置
US9595464B2 (en) * 2014-07-19 2017-03-14 Applied Materials, Inc. Apparatus and method for reducing substrate sliding in process chambers
SG10201901906YA (en) * 2014-09-05 2019-04-29 Applied Materials Inc Atmospheric epitaxial deposition chamber
US10236197B2 (en) * 2014-11-06 2019-03-19 Applied Materials, Inc. Processing system containing an isolation region separating a deposition chamber from a treatment chamber
CN105734520B (zh) * 2014-12-11 2018-08-24 北京北方华创微电子装备有限公司 工艺腔室
US10096495B2 (en) * 2014-12-26 2018-10-09 Tokyo Electron Limited Substrate processing apparatus
TWI677046B (zh) * 2015-04-23 2019-11-11 美商應用材料股份有限公司 半導體處理系統中的外部基板材旋轉
KR20180006496A (ko) * 2015-06-05 2018-01-17 어플라이드 머티어리얼스, 인코포레이티드 서셉터 포지션 및 회전 장치, 및 사용 방법들
US20170178758A1 (en) * 2015-12-18 2017-06-22 Applied Materials, Inc. Uniform wafer temperature achievement in unsymmetric chamber environment
US10533251B2 (en) * 2015-12-31 2020-01-14 Lam Research Corporation Actuator to dynamically adjust showerhead tilt in a semiconductor processing apparatus
TWI729101B (zh) * 2016-04-02 2021-06-01 美商應用材料股份有限公司 用於旋轉料架基座中的晶圓旋轉的設備及方法
TWI727024B (zh) * 2016-04-15 2021-05-11 美商應用材料股份有限公司 微體積沉積腔室
US10679827B2 (en) * 2017-01-25 2020-06-09 Applied Materials, Inc. Method and apparatus for semiconductor processing chamber isolation for reduced particles and improved uniformity
US11434569B2 (en) * 2018-05-25 2022-09-06 Applied Materials, Inc. Ground path systems for providing a shorter and symmetrical ground path
US11499666B2 (en) * 2018-05-25 2022-11-15 Applied Materials, Inc. Precision dynamic leveling mechanism with long motion capability
KR102789697B1 (ko) * 2018-09-28 2025-03-31 어플라이드 머티어리얼스, 인코포레이티드 동적 레벨링을 갖는 동축 리프트 디바이스
US11501957B2 (en) * 2020-09-03 2022-11-15 Applied Materials, Inc. Pedestal support design for precise chamber matching and process control
US12227847B2 (en) * 2021-03-31 2025-02-18 Applied Materials, Inc. Level monitoring and active adjustment of a substrate support assembly

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017122262A (ja) 2016-01-06 2017-07-13 株式会社アルバック 成膜方法
WO2018067297A1 (en) 2016-10-03 2018-04-12 Applied Materials, Inc. Dynamic leveling process heater lift

Also Published As

Publication number Publication date
TW202403937A (zh) 2024-01-16
CN112639164B (zh) 2023-10-10
US20230360956A1 (en) 2023-11-09
JP2024102103A (ja) 2024-07-30
US20200105573A1 (en) 2020-04-02
JP7712418B2 (ja) 2025-07-23
KR20210055088A (ko) 2021-05-14
TW202025342A (zh) 2020-07-01
CN117305815A (zh) 2023-12-29
KR20250048484A (ko) 2025-04-08
TWI897025B (zh) 2025-09-11
WO2020068343A1 (en) 2020-04-02
JP2022502846A (ja) 2022-01-11
KR102789697B1 (ko) 2025-03-31
US20230360955A1 (en) 2023-11-09
US11742235B2 (en) 2023-08-29
CN112639164A (zh) 2021-04-09
TWI816876B (zh) 2023-10-01
SG11202101649WA (en) 2021-04-29
CN117305815B (zh) 2026-02-27

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