JP7475337B2 - 動的水平化を備えた同軸リフト装置 - Google Patents
動的水平化を備えた同軸リフト装置 Download PDFInfo
- Publication number
- JP7475337B2 JP7475337B2 JP2021516574A JP2021516574A JP7475337B2 JP 7475337 B2 JP7475337 B2 JP 7475337B2 JP 2021516574 A JP2021516574 A JP 2021516574A JP 2021516574 A JP2021516574 A JP 2021516574A JP 7475337 B2 JP7475337 B2 JP 7475337B2
- Authority
- JP
- Japan
- Prior art keywords
- pedestal
- bottom bowl
- lift
- carrier
- bowl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 167
- 239000000758 substrate Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 17
- 238000000151 deposition Methods 0.000 claims description 10
- 238000001816 cooling Methods 0.000 claims description 7
- 238000000429 assembly Methods 0.000 claims description 6
- 230000000712 assembly Effects 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims 7
- 239000007789 gas Substances 0.000 description 17
- 230000003071 parasitic effect Effects 0.000 description 11
- 230000008021 deposition Effects 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000036316 preload Effects 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/002—Cooling arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/202—Movement
- H01J2237/20221—Translation
- H01J2237/20235—Z movement or adjustment
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Forklifts And Lifting Vehicles (AREA)
- Physical Vapour Deposition (AREA)
Description
基板支持表面とペデスタルの外のり寸法を規定する側壁とを有するペデスタルと;
ペデスタルの外のり寸法より大きな内のり寸法を有する壁を有する底部ボウル;
底部ボウルを支持するように構成された底部ボウルキャリヤ;
底部ボウルキャリヤを第1の方向に並行移動させるように構成された底部ボウルアクチュエータアセンブリ
を含む底部ボウルリフトと;
ペデスタルに連結されたペデスタルキャリヤ;及び
各々がペデスタルキャリヤの別個の部分に連結されている複数のアクチュエータであって、複数のアクチュエータのうちの1つ又は複数がペデスタルキャリヤの少なくとも一部分を第1の方向に並行移動させるとき、ペデスタルと底部ボウルとの間に相対的な線形及び角運動を生じさせるように構成された複数のアクチュエータ
を含むペデスタルリフトと
を含む。
底部ボウルが処理チャンバの底面に近接する下降位置に位置するように、交換位置へと底部ボウルリフトを下降させることであって、底部ボウルが、内側容積部を画定する内表面を有する壁を含む、底部ボウルリフトを下降させること;
処理チャンバの底面から一定の距離に位置する処理位置へと底部ボウルリフトを上昇させること;
ペデスタルの上面をシャワーヘッドの出力面に対して第1の配向に配向することであって、シャワーヘッドの出力面に対してペデスタルの上面の第1の配向が同一平面上になく;ペデスタルが底部ボウルの内側容積部の内部において位置決め可能である、ペデスタルの上面を配向すること;及び
ペデスタルの上面が第1の配向に配向されており、且つ底部ボウルリフトが処理位置にある間に、ペデスタルの上面に配置された基板上に第1の材料層を堆積させること
を含む。
基板支持表面とペデスタルの外のり寸法を規定する側壁とを有するペデスタルと;
ペデスタルの外のり寸法より大きな内のり寸法を有する壁を有する底部ボウル;
底部ボウルを支持するように構成された底部ボウルキャリヤ;
底部ボウルが処理チャンバの底部に近接する下降位置に位置するような交換位置と、底部ボウルが処理チャンバの底部に対して上昇位置に位置するような処理位置との間で、底部ボウルキャリヤを移動させるように構成された底部ボウルアクチュエータアセンブリ
を含む底部ボウルリフトと;
ペデスタルを支持するように構成されたペデスタルキャリヤであって、ペデスタルが底部ボウルの内側容積部の内部において位置決め可能である、ペデスタルキャリヤ;及び
各々がペデスタルキャリヤの別個の部分に連結されている複数のアクチュエータであって、シャワーヘッドの出力面に近接してペデスタルを上昇させ、ペデスタルの上面をシャワーヘッドの出力面に対して第1の配向に配向させるように構成されており、シャワーヘッドの出力面に対してペデスタルの上面の第1の配向は同一平面上にない、複数のアクチュエータ
を含むペデスタルリフトと
を含む。
ペデスタル120は、ペデスタル120の外のり寸法120Bを規定する側壁120Cも有している。
Claims (20)
- 基板支持表面とペデスタルの外のり寸法を規定する側壁とを有するペデスタルと、
底部ボウルリフトと、
ペデスタルリフトと
を備えたリフトアセンブリであって、
前記底部ボウルリフトが、
前記ペデスタルの下方に配置される底部と、前記底部から上方に延在する周壁とを含む底部ボウルであって、前記周壁の内のり寸法が、前記ペデスタルの前記外のり寸法より大きい、底部ボウル;
前記底部ボウルを支持するように構成された底部ボウルキャリヤ;及び
前記底部ボウルキャリヤを第1の方向に並行移動させるように構成された底部ボウルアクチュエータアセンブリ
を含み、
前記ペデスタルリフトが、
前記ペデスタルに連結されたペデスタルキャリヤ;及び
複数のアクチュエータ
を含み、前記複数のアクチュエータの各々が前記ペデスタルキャリヤの別個の部分に連結され、前記複数のアクチュエータのうちの1つ又は複数が前記ペデスタルキャリヤの少なくとも一部分を前記第1の方向に並行移動させるとき、前記ペデスタルと前記底部ボウルとの間に相対的な線形及び角運動を生じさせるように構成されている、リフトアセンブリ。 - 前記底部ボウルキャリヤと前記ペデスタルキャリヤとが、ベローズを介して一緒に取り付けられており、前記ベローズが前記底部ボウルリフトと前記ペデスタルリフトとの間にシールを形成する、請求項1に記載のリフトアセンブリ。
- 前記底部ボウルアクチュエータアセンブリが1つ又は複数のガイド及び底部ボウルアクチュエータをさらに備え、前記1つ又は複数のガイドがバックボーン構造及び前記底部ボウルキャリヤに連結されており、且つ前記1つ又は複数のガイドが、前記底部ボウルアクチュエータが前記底部ボウルキャリヤを前記第1の方向に並行移動させるとき、前記バックボーン構造と前記底部ボウルキャリヤとの間に前記第1の方向への相対的な線形運動を可能にするように構成されている、請求項1に記載のリフトアセンブリ。
- 第1の端部及び第2の端部を有するたわみヒンジをさらに備え、前記たわみヒンジの各々が、前記第1の端部でベースアセンブリに取り付けられており、前記第2の端部で前記複数のアクチュエータのうちの1つに取り付けられている、請求項1に記載のリフトアセンブリ。
- 前記底部ボウルキャリヤと前記ペデスタルキャリヤとに取り付けられた冷却ハブをさらに備える、請求項1に記載のリフトアセンブリ。
- 前記複数のアクチュエータが3つのアクチュエータを含む、請求項1に記載のリフトアセンブリ。
- 底部ボウルが処理チャンバの底面に近接する下降位置に位置するように、交換位置へと底部ボウルリフトを下降させることであって、前記底部ボウルは、底部と、前記底部から上方に延在する周壁とを含み、前記底部の上面と前記周壁の内表面とは、前記底部ボウルの内側容積部を画定する、底部ボウルリフトを下降させること;
前記処理チャンバの前記底面から一定の距離に位置する処理位置へと前記底部ボウルリフトを上昇させること;
前記底部ボウルの前記周壁の内のり寸法よりも小さい外のり寸法を有するペデスタルの上面を、シャワーヘッドの出力面に対して第1の配向に配向することであって、
前記シャワーヘッドの前記出力面に対して前記ペデスタルの前記上面の前記第1の配向が同一平面上になく;且つ
前記ペデスタルが前記底部ボウルの内側容積部の内部において位置決め可能である、
ペデスタルの上面を配向すること;及び
前記ペデスタルの上面が前記第1の配向に配向されており、且つ前記底部ボウルリフトが処理位置にある間に、前記ペデスタルの前記上面に配置された基板上に第1の材料層を堆積させること
を含む、リフトシステムのための方法。 - 前記リフトシステムが底部ボウルキャリヤ及びペデスタルキャリヤを備え、前記底部ボウルキャリヤが前記底部ボウルに連結され、前記ペデスタルキャリヤが前記ペデスタルに連結される、請求項7に記載の方法。
- 前記リフトシステムが、前記ペデスタルと前記底部ボウルとの間に相対的な線形及び角運動を生じさせるように構成された複数のアクチュエータを備える、請求項7に記載の方法。
- 基板支持表面とペデスタルの外のり寸法を規定する側壁とを有するペデスタルと、
底部ボウルリフトと、
ペデスタルリフトと
を備えたリフトシステムであって、
前記底部ボウルリフトが、
前記ペデスタルの下方に配置される底部と、前記底部から上方に延在する周壁とを含む底部ボウルであって、前記周壁の内のり寸法が、前記ペデスタルの前記外のり寸法より大きい、底部ボウル;
前記底部ボウルを支持するように構成された底部ボウルキャリヤ;及び
前記底部ボウルが処理チャンバの底部に近接する下降位置に位置するような交換位置と、前記底部ボウルが前記処理チャンバの前記底部に対して上昇位置に位置するような処理位置との間で、前記底部ボウルキャリヤを移動させるように構成された底部ボウルアクチュエータアセンブリ
を含み、
前記ペデスタルリフトが、
前記ペデスタルを支持するように構成されたペデスタルキャリヤであって、前記ペデスタルが前記底部ボウルの内側容積部の内部において位置決め可能である、ペデスタルキャリヤ;及び
複数のアクチュエータ
を含み、前記複数のアクチュエータの各々が前記ペデスタルキャリヤの別個の部分に連結され、シャワーヘッドの出力面に近接して前記ペデスタルを上昇させ、且つ前記ペデスタルの上面を前記シャワーヘッドの前記出力面に対して第1の配向に配向させるように構成されており、前記シャワーヘッドの前記出力面に対して前記ペデスタルの前記上面の前記第1の配向は同一平面上にない、リフトシステム。 - 前記底部ボウルが、前記底部ボウルの前記底部から、前記処理チャンバの前記底部に設けられた開口を通って下方に延びる下端を有し、第1の端部及び第2の端部を有するベローズの前記第1の端部が、前記下端に連結されており、前記ベローズの前記第2の端部は前記処理チャンバの前記底部の一部分にシールされている、請求項10に記載のリフトシステム。
- 球関節アセンブリをさらに備え、前記球関節アセンブリの各々が、前記複数のアクチュエータのうちの1つを前記ペデスタルキャリヤに連結する、請求項10に記載のリフトシステム。
- 前記球関節アセンブリが、取り付け点の周りに3の自由度(ピッチ、ヨー、及びロール)を可能にする、請求項12に記載のリフトシステム。
- 第1の端部及び第2の端部を有するたわみヒンジをさらに備え、前記たわみヒンジの各々が、前記第1の端部でベースアセンブリに取り付けられており、前記第2の端部で前記複数のアクチュエータのうちの1つに取り付けられている、請求項10に記載のリフトシステム。
- 前記底部ボウルキャリヤと前記ペデスタルキャリヤとに取り付けられた冷却ハブをさらに備える、請求項10に記載のリフトシステム。
- 前記底部ボウルアクチュエータアセンブリのアクチュエータと前記複数のアクチュエータのそれぞれが、線形のボールねじアクチュエータである、請求項10に記載のリフトシステム。
- 前記線形のボールねじアクチュエータのそれぞれが、サーボモータによって駆動される、請求項16に記載のリフトシステム。
- 前記複数のアクチュエータが3つのアクチュエータを含む、請求項10に記載のリフトシステム。
- 球関節アセンブリをさらに備え、前記球関節アセンブリの各々が、前記複数のアクチュエータのうちの1つを前記ペデスタルキャリヤに連結する、請求項1に記載のリフトアセンブリ。
- 前記球関節アセンブリが、取り付け点の周りに3の自由度(ピッチ、ヨー、及びロール)を可能にする、請求項19に記載のリフトアセンブリ。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2024065841A JP2024102103A (ja) | 2018-09-28 | 2024-04-16 | 動的水平化を備えた同軸リフト装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862738869P | 2018-09-28 | 2018-09-28 | |
US62/738,869 | 2018-09-28 | ||
PCT/US2019/048529 WO2020068343A1 (en) | 2018-09-28 | 2019-08-28 | Coaxial lift device with dynamic leveling |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2024065841A Division JP2024102103A (ja) | 2018-09-28 | 2024-04-16 | 動的水平化を備えた同軸リフト装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2022502846A JP2022502846A (ja) | 2022-01-11 |
JPWO2020068343A5 JPWO2020068343A5 (ja) | 2022-09-05 |
JP7475337B2 true JP7475337B2 (ja) | 2024-04-26 |
Family
ID=69946575
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021516574A Active JP7475337B2 (ja) | 2018-09-28 | 2019-08-28 | 動的水平化を備えた同軸リフト装置 |
JP2024065841A Pending JP2024102103A (ja) | 2018-09-28 | 2024-04-16 | 動的水平化を備えた同軸リフト装置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2024065841A Pending JP2024102103A (ja) | 2018-09-28 | 2024-04-16 | 動的水平化を備えた同軸リフト装置 |
Country Status (7)
Country | Link |
---|---|
US (3) | US11742235B2 (ja) |
JP (2) | JP7475337B2 (ja) |
KR (1) | KR20210055088A (ja) |
CN (2) | CN112639164B (ja) |
SG (1) | SG11202101649WA (ja) |
TW (2) | TWI816876B (ja) |
WO (1) | WO2020068343A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020068343A1 (en) * | 2018-09-28 | 2020-04-02 | Applied Materials, Inc. | Coaxial lift device with dynamic leveling |
JP7488138B2 (ja) * | 2020-07-07 | 2024-05-21 | 東京エレクトロン株式会社 | 真空処理装置、及び真空処理装置の制御方法 |
CN112736020B (zh) * | 2020-12-31 | 2024-06-07 | 拓荆科技股份有限公司 | 晶圆支撑销升降装置 |
JP2022139625A (ja) * | 2021-03-12 | 2022-09-26 | 東京エレクトロン株式会社 | 真空処理装置および傾き調整方法 |
US20220316066A1 (en) * | 2021-03-31 | 2022-10-06 | Applied Materials, Inc. | Level monitoring and active adjustment of a substrate support assembly |
US20240183790A1 (en) * | 2022-12-06 | 2024-06-06 | Kla Corporation | Lifter assembly with bellows for optical inspection system |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017122262A (ja) | 2016-01-06 | 2017-07-13 | 株式会社アルバック | 成膜方法 |
WO2018067297A1 (en) | 2016-10-03 | 2018-04-12 | Applied Materials, Inc. | Dynamic leveling process heater lift |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3057094B2 (ja) * | 1990-11-27 | 2000-06-26 | 株式会社東芝 | 基板加熱装置 |
US5791895A (en) * | 1994-02-17 | 1998-08-11 | Novellus Systems, Inc. | Apparatus for thermal treatment of thin film wafer |
JPH11297800A (ja) * | 1998-04-09 | 1999-10-29 | Nec Kyushu Ltd | 半導体装置製造用装置 |
JP4255148B2 (ja) * | 1998-08-06 | 2009-04-15 | キヤノンアネルバ株式会社 | パージガス導入機構および成膜装置 |
WO2002033729A2 (en) * | 2000-10-16 | 2002-04-25 | Tokyo Electron Limited | Plasma reactor with reduced reaction chamber |
US6730175B2 (en) | 2002-01-22 | 2004-05-04 | Applied Materials, Inc. | Ceramic substrate support |
JP4244555B2 (ja) * | 2002-02-25 | 2009-03-25 | 東京エレクトロン株式会社 | 被処理体の支持機構 |
US6776849B2 (en) * | 2002-03-15 | 2004-08-17 | Asm America, Inc. | Wafer holder with peripheral lift ring |
US6800833B2 (en) | 2002-03-29 | 2004-10-05 | Mariusch Gregor | Electromagnetically levitated substrate support |
JP2003332309A (ja) * | 2002-05-08 | 2003-11-21 | Hitachi High-Technologies Corp | 真空処理装置 |
US7009281B2 (en) * | 2003-03-14 | 2006-03-07 | Lam Corporation | Small volume process chamber with hot inner surfaces |
JP4173389B2 (ja) * | 2003-03-19 | 2008-10-29 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US7001491B2 (en) * | 2003-06-26 | 2006-02-21 | Tokyo Electron Limited | Vacuum-processing chamber-shield and multi-chamber pumping method |
US7654221B2 (en) | 2003-10-06 | 2010-02-02 | Applied Materials, Inc. | Apparatus for electroless deposition of metals onto semiconductor substrates |
US20050230350A1 (en) | 2004-02-26 | 2005-10-20 | Applied Materials, Inc. | In-situ dry clean chamber for front end of line fabrication |
US20070221128A1 (en) * | 2006-03-23 | 2007-09-27 | Soo Young Choi | Method and apparatus for improving uniformity of large-area substrates |
US7858898B2 (en) * | 2007-01-26 | 2010-12-28 | Lam Research Corporation | Bevel etcher with gap control |
NL1036859A1 (nl) * | 2008-04-29 | 2009-10-30 | Asml Netherlands Bv | Support structure, inspection apparatus, lithographic apparatus and methods for loading and unloading substrates. |
US8895452B2 (en) * | 2012-05-31 | 2014-11-25 | Lam Research Corporation | Substrate support providing gap height and planarization adjustment in plasma processing chamber |
US20140263275A1 (en) | 2013-03-15 | 2014-09-18 | Applied Materials, Inc. | Rotation enabled multifunctional heater-chiller pedestal |
JP2014203975A (ja) * | 2013-04-05 | 2014-10-27 | 大日本スクリーン製造株式会社 | 薄膜形成装置 |
JP6400977B2 (ja) * | 2013-09-25 | 2018-10-03 | 芝浦メカトロニクス株式会社 | スピン処理装置 |
WO2016036868A1 (en) * | 2014-09-05 | 2016-03-10 | Applied Materials, Inc. | Atmospheric epitaxial deposition chamber |
US10096495B2 (en) * | 2014-12-26 | 2018-10-09 | Tokyo Electron Limited | Substrate processing apparatus |
TWI677046B (zh) * | 2015-04-23 | 2019-11-11 | 美商應用材料股份有限公司 | 半導體處理系統中的外部基板材旋轉 |
JP6802191B2 (ja) * | 2015-06-05 | 2020-12-16 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | サセプタの位置付け及び回転装置、並びに使用の方法 |
US10533251B2 (en) * | 2015-12-31 | 2020-01-14 | Lam Research Corporation | Actuator to dynamically adjust showerhead tilt in a semiconductor processing apparatus |
TWI729101B (zh) * | 2016-04-02 | 2021-06-01 | 美商應用材料股份有限公司 | 用於旋轉料架基座中的晶圓旋轉的設備及方法 |
TWI727024B (zh) * | 2016-04-15 | 2021-05-11 | 美商應用材料股份有限公司 | 微體積沉積腔室 |
US10679827B2 (en) * | 2017-01-25 | 2020-06-09 | Applied Materials, Inc. | Method and apparatus for semiconductor processing chamber isolation for reduced particles and improved uniformity |
US11434569B2 (en) * | 2018-05-25 | 2022-09-06 | Applied Materials, Inc. | Ground path systems for providing a shorter and symmetrical ground path |
US11499666B2 (en) * | 2018-05-25 | 2022-11-15 | Applied Materials, Inc. | Precision dynamic leveling mechanism with long motion capability |
WO2020068343A1 (en) * | 2018-09-28 | 2020-04-02 | Applied Materials, Inc. | Coaxial lift device with dynamic leveling |
US11501957B2 (en) * | 2020-09-03 | 2022-11-15 | Applied Materials, Inc. | Pedestal support design for precise chamber matching and process control |
US20220316066A1 (en) * | 2021-03-31 | 2022-10-06 | Applied Materials, Inc. | Level monitoring and active adjustment of a substrate support assembly |
-
2019
- 2019-08-28 WO PCT/US2019/048529 patent/WO2020068343A1/en active Application Filing
- 2019-08-28 CN CN201980057060.8A patent/CN112639164B/zh active Active
- 2019-08-28 CN CN202311253211.1A patent/CN117305815A/zh active Pending
- 2019-08-28 SG SG11202101649WA patent/SG11202101649WA/en unknown
- 2019-08-28 KR KR1020217011257A patent/KR20210055088A/ko not_active Application Discontinuation
- 2019-08-28 JP JP2021516574A patent/JP7475337B2/ja active Active
- 2019-09-09 US US16/565,287 patent/US11742235B2/en active Active
- 2019-09-09 TW TW108132371A patent/TWI816876B/zh active
- 2019-09-09 TW TW112134014A patent/TW202403937A/zh unknown
-
2023
- 2023-07-21 US US18/356,553 patent/US20230360955A1/en active Pending
- 2023-07-21 US US18/356,579 patent/US20230360956A1/en active Pending
-
2024
- 2024-04-16 JP JP2024065841A patent/JP2024102103A/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017122262A (ja) | 2016-01-06 | 2017-07-13 | 株式会社アルバック | 成膜方法 |
WO2018067297A1 (en) | 2016-10-03 | 2018-04-12 | Applied Materials, Inc. | Dynamic leveling process heater lift |
Also Published As
Publication number | Publication date |
---|---|
CN117305815A (zh) | 2023-12-29 |
JP2022502846A (ja) | 2022-01-11 |
US20230360955A1 (en) | 2023-11-09 |
TW202403937A (zh) | 2024-01-16 |
SG11202101649WA (en) | 2021-04-29 |
CN112639164B (zh) | 2023-10-10 |
JP2024102103A (ja) | 2024-07-30 |
TW202025342A (zh) | 2020-07-01 |
US20230360956A1 (en) | 2023-11-09 |
WO2020068343A1 (en) | 2020-04-02 |
CN112639164A (zh) | 2021-04-09 |
US11742235B2 (en) | 2023-08-29 |
TWI816876B (zh) | 2023-10-01 |
US20200105573A1 (en) | 2020-04-02 |
KR20210055088A (ko) | 2021-05-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7475337B2 (ja) | 動的水平化を備えた同軸リフト装置 | |
US11037762B2 (en) | Plasma processing apparatus | |
US11393710B2 (en) | Wafer edge ring lifting solution | |
US12094752B2 (en) | Wafer edge ring lifting solution | |
CN107974668B (zh) | 基座组件及处理室 | |
US6500265B1 (en) | Apparatus for electrostatically maintaining subtrate flatness | |
KR102002216B1 (ko) | 기판 승강 기구, 기판 탑재대 및 기판 처리 장치 | |
US20120252220A1 (en) | Substrate processing apparatus, method for manufacturing semiconductor device, method for processing substrates | |
TW201814827A (zh) | 在電漿處理室中提供間隙高度及平面化調整之基板支架 | |
CN108140544B (zh) | 用于改善清洁的具有非均匀气流余隙的框架 | |
CN100508117C (zh) | 等离子体处理装置 | |
JP2003133233A (ja) | 基板処理装置 | |
US9011634B2 (en) | Plasma processing apparatus and plasma processing method | |
JP2021118249A (ja) | プラズマ処理装置 | |
CN114664622B (zh) | 一种等离子体处理装置及调节方法 | |
US20240240322A1 (en) | Process chamber having shutter cover for substrate uniformity and prevention of unintended deposition | |
JP7492900B2 (ja) | プラズマ処理装置 | |
US20240079216A1 (en) | Apparatus for treating substrate and method for treating substrate | |
KR20240040881A (ko) | 기판 처리 장치 | |
TW202231131A (zh) | 用於基板極端邊緣保護的環 | |
TW202333192A (zh) | 基板處理設備及基板處理方法 | |
CN117737701A (zh) | 一种基座、半导体制造装置、气相生长和刻蚀方法 | |
KR101962915B1 (ko) | 기판 처리 장치 및 기판 처리 방법 | |
KR20210133582A (ko) | 기판처리장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220826 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220826 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20231017 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240116 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20240319 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20240416 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7475337 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |