JP7488138B2 - 真空処理装置、及び真空処理装置の制御方法 - Google Patents
真空処理装置、及び真空処理装置の制御方法 Download PDFInfo
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- JP7488138B2 JP7488138B2 JP2020116868A JP2020116868A JP7488138B2 JP 7488138 B2 JP7488138 B2 JP 7488138B2 JP 2020116868 A JP2020116868 A JP 2020116868A JP 2020116868 A JP2020116868 A JP 2020116868A JP 7488138 B2 JP7488138 B2 JP 7488138B2
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Description
[真空処理システムの構成]
図1は、実施形態に係る真空処理システムの構成の一例を示す概略平面図である。真空処理システム1は、搬入出ポート11と、搬入出モジュール12と、真空搬送モジュール13と、真空処理装置2とを有する。図1において、X方向を左右方向、Y方向を前後方向、Z方向を上下方向(高さ方向)、搬入出ポート11を前後方向の手前側として説明する。搬入出モジュール12の手前側には搬入出ポート11、搬入出モジュール12の奥側には真空搬送モジュール13が、夫々互いに前後方向に向けて接続されている。
続いて、真空処理装置2を、例えばウエハWにプラズマCVD(Chemical Vapor Deposition)処理を行なう成膜装置に適用した例について、図2~図4を参照しながら説明する。図2は、実施形態に係る真空処理装置2の構成の一例を示す分解斜視図である。図3は、実施形態に係る真空処理装置2の内部構成を概略的に示す平面図である。
図5は、実施形態に係る回転駆動機構600及び調整機構700の構成の一例を示す図である。処理容器20の底部27には、載置台22を支持する位置に対応して孔27aが形成されている。孔27aには、載置台22を下方から支持する支持部材23が挿入されている。そして、処理容器20の外部に位置する支持部材23の下端部23aには、回転駆動機構600が接続されている。
次に、実施形態に係る真空処理装置2の制御方法の流れの具体例について説明する。図7は、実施形態に係る真空処理装置2の制御方法の流れの例1を示すフローチャートである。
以上のように、実施形態に係る真空処理装置2は、処理容器20と、載置台22と、支持部材23と、ベース部材710と、複数のアクチュエータ720とを有する。処理容器20は、内部を真空雰囲気に維持可能に構成される。載置台22は、処理容器20内に設けられ、ウエハW(基板)が載置される。支持部材23は、処理容器20の底部27の孔を貫通して載置台22を下方から支持する。ベース部材710は、処理容器20の外部に位置する支持部材23の端部に係合されて載置台22と一体的に移動可能に構成される。複数のアクチュエータ720は、処理容器20の底部27とベース部材710との間に互いに並列に設けられ、処理容器20の底部27に対してベース部材710を相対的に移動させることで、載置台22の位置及び傾きを調整する。これにより、真空処理装置2は、処理容器20の変形に起因した、載置台22の位置及び傾きのずれを改善することができる。
20 処理容器
22 載置台
23 支持部材
26 リフターピン
26a ピン用貫通孔
27 底部
43 シャワープレート
700 調整機構
710 ベース部材
720 アクチュエータ
730 吸収機構
732 板部材
733 ロッド部材
740 ベローズ
Claims (11)
- 内部を真空雰囲気に維持可能な処理容器と、
前記処理容器内に設けられ、基板が載置される載置台と、
前記処理容器の底部の孔を貫通して前記載置台を下方から支持する支持部材と、
前記処理容器の外部に位置する前記支持部材の端部に係合されて前記載置台と一体的に移動可能なベース部材と、
前記処理容器の底部と前記ベース部材との間に互いに並列に設けられ、前記処理容器の底部に対して前記ベース部材を相対的に移動させることで、前記載置台の位置及び傾きを調整する複数のアクチュエータと、
前記処理容器の底部の変形を吸収する吸収機構と
を有し、
前記吸収機構は、
板部材と、
ロッド部材と
を有し、
前記ロッド部材の一端が前記処理容器の底部に連結されるとともに、前記ロッド部材の他端が前記板部材に連結され、
前記ロッド部材の前記一端及び前記他端の少なくとも一方は、前記処理容器の前記底部又は前記板部材に回転摺動可能に連結され、前記処理容器の前記底部の変形に応じた方向に回転することで、前記板部材への前記変形の伝達を抑制し、
前記複数のアクチュエータは、前記板部材に連結される、
真空処理装置。 - 前記複数のアクチュエータ及び前記ベース部材は、前記ベース部材を複数の軸の方向及び各軸回りの回転の方向へそれぞれ移動可能なパラレルリンク機構を形成し、当該パラレルリンク機構によって前記処理容器の底部と前記ベース部材とを連結する、請求項1に記載の真空処理装置。
- 前記複数のアクチュエータは、前記処理容器の底部の外壁面に直交する方向に前記ベース部材を移動させることで、前記載置台の位置を調整する、請求項1又は2に記載の真空処理装置。
- 前記複数のアクチュエータは、前記処理容器の底部の外壁面に沿う方向に前記ベース部材を移動させることで、前記載置台の位置を調整する、請求項1~3のいずれか一つに記載の真空処理装置。
- 前記複数のアクチュエータは、前記処理容器の底部の外壁面に対して前記ベース部材を傾けることで、前記載置台の傾きを調整する、請求項1~4のいずれか一つに記載の真空処理装置。
- 前記支持部材の周囲に設けられて前記処理容器の底部と前記ベース部材との間の空間を気密に封止し、前記ベース部材の移動に応じて伸縮可能な伸縮部材をさらに有する、請求項1~5のいずれか一つに記載の真空処理装置。
- 前記ロッド部材の前記他端は、前記板部材に回転摺動可能に連結される、請求項1~6のいずれか一つに記載の真空処理装置。
- 前記板部材は、前記処理容器の底部の外壁面と間隔を空けて配置される、請求項1~7のいずれか一つに記載の真空処理装置。
- 内部を真空雰囲気に維持可能な処理容器と、
前記処理容器内に設けられ、基板が載置される載置台と、
前記処理容器の底部の孔を貫通して前記載置台を下方から支持する支持部材と、
前記処理容器の外部に位置する前記支持部材の端部に係合されて前記載置台と一体的に移動可能なベース部材と、
前記処理容器の底部と前記ベース部材との間に互いに並列に設けられ、前記処理容器の底部に対して前記ベース部材を相対的に移動させることで、前記載置台の位置及び傾きを調整する複数のアクチュエータと
を有する真空処理装置の制御方法であって、
前記基板が搬送機構により搬送される際の目標位置からのずれ量を前記基板の位置の補正量として算出する工程と、
前記ベース部材が予め定められた基準位置から前記補正量だけ移動するように前記複数のアクチュエータを制御する工程と、
前記ベース部材とともに移動した前記載置台と前記搬送機構との間で前記基板の受け渡しを行う工程と、
前記基板の受け渡しが行われた後に、前記ベース部材が前記基準位置へ移動するように前記複数のアクチュエータを制御する工程と
を含む、真空処理装置の制御方法。 - 内部を真空雰囲気に維持可能な処理容器と、
前記処理容器内に設けられ、基板が載置される載置台と、
前記処理容器の底部の孔を貫通して前記載置台を下方から支持する支持部材と、
前記処理容器の外部に位置する前記支持部材の端部に係合されて前記載置台と一体的に移動可能なベース部材と、
前記処理容器の底部と前記ベース部材との間に互いに並列に設けられ、前記処理容器の底部に対して前記ベース部材を相対的に移動させることで、前記載置台の位置及び傾きを調整する複数のアクチュエータと
を有する真空処理装置の制御方法であって、
前記真空処理装置は、
前記処理容器内で前記載置台に対向して配置された上部電極と、
前記上部電極の周囲に配置され、所定の検知範囲内に位置する前記基板の膜厚を非接触で検知可能な膜厚センサと
をさらに有し、
前記載置台に載置された前記基板が前記膜厚センサの検知範囲内に移動するまで前記ベース部材が移動するように前記複数のアクチュエータを制御する工程
を含む、真空処理装置の制御方法。 - 内部を真空雰囲気に維持可能な処理容器と、
前記処理容器内に設けられ、基板が載置される載置台と、
前記処理容器の底部の孔を貫通して前記載置台を下方から支持する支持部材と、
前記処理容器の外部に位置する前記支持部材の端部に係合されて前記載置台と一体的に移動可能なベース部材と、
前記処理容器の底部と前記ベース部材との間に互いに並列に設けられ、前記処理容器の底部に対して前記ベース部材を相対的に移動させることで、前記載置台の位置及び傾きを調整する複数のアクチュエータと
を有する真空処理装置の制御方法であって、
前記真空処理装置は、
前記処理容器内で前記載置台に対向して配置された上部電極をさらに有し、
前記載置台の載置面内の複数の位置各々について前記載置台と前記上部電極との間の距離を測定可能な距離測定基板を前記載置台上に配置する工程と、
前記距離測定基板による測定結果に基づき、前記載置台の載置面内の複数の位置での前記距離が所定範囲に収まる位置まで前記ベース部材が移動するように前記複数のアクチュエータを制御する工程と
を含む、真空処理装置の制御方法。
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