CN112639164A - 具有动态调平的同轴升降装置 - Google Patents
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Abstract
本文描述的实施例总体上涉及具有同轴升降装置的工艺腔室。在一些实施例中,装置包括底部碗升降器和底座升降器两者。底部碗升降器支撑底部碗,并且被配置成将底部碗移动到减小工艺容积的位置。底部碗升降器与底座升降器同轴,并且底部碗升降器和底座升降器被附接以用于真空操作。底座升降器包括多个致动器以创建动态升降机构。两种系统完成了嵌套系统(nested system),使得底部碗升降器是可调节的,并且可以关闭底部碗,从而创建对称且小的工艺容积。底座升降器可独立地移动到底座升降器的工艺位置,并且沿所期望的方向倾斜,而不受底部碗升降器的干扰,从而增加了经处理的基板上的膜均匀性。
Description
背景技术
技术领域
本文所述的实施例总体上涉及用于升高和降低在工艺腔室中使用的基板支撑元件的升降装置。
相关技术说明
通常采用化学气相沉积(CVD)在半导体工艺腔室中的基板(诸如用于平板显示器的半导体晶片或透明基板)上沉积膜。通常通过将工艺气体引入包含基板的真空腔室中来实现CVD。前驱物气体或气体混合物通常被向下引导通过位于腔室顶部附近的气体分配组件。气体分配组件以小距离放置在定位在加热的底座上的基板上方,使得气体分配组件和工艺气体被设置在底座内的加热元件所提供的热量加热。
在CVD工艺期间,可通过从耦接至腔室的一个或多个RF源向腔室施加射频(RF)功率来将腔室中的工艺气体赋能(energized)(例如,激发)成等离子体,这称为等离子体增强的CVD(PECVD)。通过RF匹配电路和接地到腔室主体的气体分配组件的面板耦接至底座的RF源促进形成电容性等离子体耦合。RF源向底座提供RF能量,以促进在底座与气体分配组件的面板之间产生电容耦合等离子体(也称为主等离子体)。然而,作为产生电容耦合等离子体和面板的接地路径的副产品,可能在底座下方在真空腔室的下部容积中产生寄生等离子体(也称为次级等离子体)。寄生等离子体降低了在电容耦合等离子体中形成的离子浓度,并且因此降低了电容耦合等离子体的密度,从而降低了膜的沉积速率。
此外,在常规设计中,在工艺腔室内的工艺位置与转移位置之间转移晶片底座仅使用线性运动。然而,由于工艺腔室中的硬件部件之间的机械公差问题,底座的表面和喷头的面板通常是不平行的,这导致经处理的基板表面上的工艺不均匀。在一个示例中,沉积的膜具有跨整个基板随边缘变化的厚度不均匀性。CVD工艺各自具有针对相对于一个或多个腔室部件(诸如喷头)的底座倾斜和位置的不同的均匀性响应。为了确保最佳的工艺结果,每一层需要相对于喷头独立调整或调谐的底座倾斜和位置,以实现最佳的工艺结果。
因此,需要一种允许工艺腔室中的两个装置之间的独立运动、同时防止工艺腔室的不想要的区域中的寄生等离子体的装置。
发明内容
本文所述的一个或多个实施例涉及升降组件,所述升降组件能够调节底座相对于工艺腔室内的一个或多个固定部件的相对位置和取向。升降组件包括在等离子体工艺腔室(诸如用于在基板上执行PECVD、蚀刻、或其他有用的等离子体工艺的腔室)内有用的硬件部件。本文所述的一个或多个实施例涉及使用升降组件的方法。本文所述的一个或多个实施例涉及包括升降组件的系统。
在一个实施例中,一种升降组件包括:具有基板支撑表面和侧壁的底座,侧壁限定底座的外部尺寸;底部碗(bowl)升降器,底部碗升降器包括:具有壁的底部碗,所述壁具有大于底座的外部尺寸的内部尺寸;被配置成支撑底部碗的底部碗托架;被配置成使底部碗托架在第一方向上平移(translate)的底部碗致动器组件;以及底座升降器,底座升降器包括:耦接至底座的底座托架;以及多个致动器,其中多个致动器中的每个致动器耦接至底座托架的单独部分,并且多个致动器被配置成当多个致动器中的一个或多个致动器使底座托架的至少一部分在第一方向上平移时,在底座与底部碗之间引起相对线性运动和角运动。
在另一实施例中,一种用于升降器系统的方法包括:将底部碗升降器降低到交换位置,使得底部碗处于靠近工艺腔室的底表面的降低的位置,其中底部碗包括壁,所述壁具有限定内部容积的内表面;将底部碗升降器提升到与工艺腔室的底表面相距一定距离的工艺位置;将底座的顶表面相对于喷头的输出表面以第一取向定向,其中底座的顶表面的第一取向相对于喷头的输出表面不共面;以及底座可定位在底部碗的内部容积内;以及在底座的顶表面以第一取向定向并且底部碗升降器处于工艺位置的同时,在设置在底座的顶表面上的基板上沉积第一材料层。
在又另一实施例中,升降器系统包括:具有基板支撑表面和侧壁的底座,侧壁限定底座的外部尺寸;底部碗升降器,底部碗升降器包括:具有壁的底部碗,所述壁具有大于底座的外部尺寸的内部尺寸;被配置成支撑底部碗的底部碗托架;被配置成使底部碗托架在交换位置与工艺位置之间移动的底部碗致动器组件,交换位置使得底部碗处于靠近工艺腔室的底部的降低的位置,工艺位置使得底部碗处于相对于工艺腔室的底部的升高的位置;以及底座升降器,底座升降器包括:被配置成支撑底座的底座托架,其中底座可定位在底部碗的内部容积内;多个致动器,其中多个致动器中的每个致动器耦接至底座托架的单独部分,并且多个致动器被配置成将底座升高到靠近喷头的输出表面,并且将底座的顶表面相对于喷头的输出表面以第一取向定向,其中底座的顶表面的第一取向相对于喷头的输出表面不共面。
附图说明
因此,能够详细理解本公开的上述特征的方式,可参考实施例来获得以上简要概述的本公开的更具体的描述,实施例中的一些实施例在附图中示出。然而,应当注意,附图仅示出本公开的典型实施例,并且因此不应被视为限制其范围,因为本公开可承认其他等效的实施例。
图1是根据本公开中描述的至少一个实施例的工艺腔室的侧截面图;
图2是根据本公开中描述的至少一个实施例的升降器系统的透视图;
图3是图1中的底部碗升降器的透视图;
图4是图1中的底座升降器的透视图;
图5A是根据本公开中描述的至少一个实施例的升降器系统的侧视图;以及
图5B是根据本公开中描述的至少一个实施例的升降器系统的侧视图。
为了便于理解,在可能的情况下,已使用相同的附图标记来表示图中共同的相同元件。可以设想的是,一个实施例的元件和特征可以有益地并入其他实施例中而无需进一步叙述。
具体实施方式
在以下描述中,许多特定细节被阐释以提供对本公开的实施例的更透彻的理解。然而,对本领域技术人员将显而易见的是,可在没有一个或多个这些特定细节的情况下实践本公开的一个或多个实施例。在其他情况下,没有描述公知的特征以避免模糊了本公开的一个或多个实施例。
本文所述的实施例通常涉及用于升高和降低在基板工艺腔室中使用的基板支撑元件或底座的升降装置。升降装置是允许基板工艺腔室内的两个组件之间的独立运动的多部件设计。在一些实施例中,升降装置包括底部碗升降组件和底座升降组件两者。底部碗升降器支撑底部碗并且被配置成将底部碗部件移动到减小工艺容积的位置,这为RF能量提供传播到地的更短且对称的路径,以减少寄生等离子体的产生,从而增加沉积速率、减少产生颗粒的机会、并且改善沉积的膜的均匀性。在一些实施例中,底部碗升降器被定位成使得底部碗升降器与底座升降器同轴,并且两个升降器被附接成使得每个升降器独立地移动。底座升降器包括能够操纵底座相对于喷头的输出表面的取向的多个致动器。此外,底座升降器可以独立地移动到底座升降器的工艺位置,并且在不干扰底部碗升降器的情况下沿所期望的方向移动。在一些实施例中,底部碗升降器具有一个运动轴,所述运动轴与具有三个运动轴的底座升降器同轴地对齐。
图1是根据本公开中描述的至少一个实施例的工艺腔室100的侧截面图。工艺腔室100包括侧壁102、顶部104和底部106。气源108经由开口110提供气体通过工艺腔室100的顶部104。气体随后通过多个孔113流动到喷头112的输出表面114并流入工艺区域116。通过从一个或多个RF源191向工艺腔室100施加RF功率来在工艺区域116内对气体赋能。在一些实施例中,所输送的RF能量促进电容耦合等离子体(也称为主等离子体)的产生,这用于形成或处理设置在基板118上的半导体膜。在处理期间,基板118通常位于底座120的顶表面120A上。底座120的顶表面120A位于与喷头112的输出表面114相距小的距离119处。底座120通常是静电吸盘、真空吸盘、或能够被加热或冷却至工艺温度的任何其他类似装置,在一些情况下,工艺温度可以是大于约700摄氏度的温度。底座120还具有限定底座120的外部尺寸120B的侧壁120C。
除了在工艺区域116中形成的主等离子体之外,还可在底座120下方在工艺腔室100的下部容积中形成次级等离子体(也称为寄生等离子体)。这作为在工艺腔室100的下部容积内产生主等离子体和RF电流的接地路径的副产品而发生。寄生等离子体降低了在主等离子体内形成的离子浓度,并且因此降低了主等离子体的密度,这对于等离子体增强的沉积工艺而言降低了沉积速率并降低了膜的均匀性。为了抵消所形成的寄生等离子体的量,底部碗122由底部碗升降器124提升到工艺位置(下文在图5B中解释)。当底部碗122处于工艺位置时,通常将底部碗122定位成使得底部碗122的上端122A抵靠边缘环123或另一类似部件的表面。边缘环123可耦接至喷头112或定位成与喷头112相邻。当底部碗122处于底部碗122的工艺位置时,底部碗122具有壁122C,壁122C包括在工艺腔室100内的内部容积121。相对于工艺腔室100的总容积,内部容积121具有减小的表面积,由附图标记129表示。减小的表面积129由底部碗122的壁122C的内表面限定。内部容积121外部的工艺腔室100的腔室容积由附图标记131表示。减小的表面积129使得能够有更短且更受控的接地路径,使得不在内部容积121中的底座120下方产生寄生等离子体。如图1、图2A和图5A-5B所示,底部碗122是轴向对称的部件(例如,围绕图1中的Z轴),底部碗122被尺寸设定为使得至少形成底部碗122的内部容积121的上端122A和壁122C大于底座120的外部尺寸120B(例如,直径)。换言之,由附图标记122B表示的内部容积121的尺寸大于底座120的外部尺寸120B。此配置允许底部碗122独立地移动而不受底座120的干扰。底部碗122由通常不与在工艺腔室100中的处理期间使用的工艺气体反应的导电材料形成。在一个示例中,底部碗122由不锈钢、金属涂覆的铝合金或未涂覆的铝合金、掺杂的碳化硅、或其他有用的材料形成。
随着底部碗升降器124升起底部碗122,底座120被底座升降器126升起以操纵底座120的顶表面120A相对于喷头112的输出表面114的取向。底座升降器126和底部碗升降器124被配置成独立地移动,使得它们在使用期间不会相互干扰。在一些实施例中,底座升降器126可以定向底座120,使得底座120相对于水平面(即,X-Y平面)和/或喷头112的输出表面114倾斜,例如如在位置128所示(虚线)。这有利于抵消在处理腔室中的硬件部件之间产生的机械公差问题。通常,底座120的顶表面120A和喷头112的输出表面114是不平行的,这导致了设置在底座升降器126的顶表面120A上的基板118的表面上的工艺不均匀性。然而,如本文所述的底座升降器126用于定向底座120的顶表面120A,使得底座120的顶表面120A能够保持与喷头112的输出表面114平行的关系,以确保最佳的工艺结果。例如,底座120可能需要倾斜到位置128以获得最佳的结果。在这些实施例中,倾斜幅度127可以向上或向下偏移约0.05英寸至约0.1英寸,然而其他倾斜幅度也是可能的。
底部碗升降器124和底座升降器126经由波纹管130彼此附接,使得底座升降器126部件可以独立地移动而不受底部碗升降器124部件的干扰。波纹管130和冷却毂(coolinghub)208(图2)在底座升降器126/底部碗升降器124之间提供密封。底部碗122的下端包括波纹管132,波纹132管具有上端,上端被螺栓连接并且密封到工艺腔室100的底部106的一部分以形成腔室密封,所述腔室密封允许工艺腔室100的工艺区域116由腔室泵(未示出)抽至真空状态。波纹管130和波纹管132两者都允许将工艺腔室100的工艺区域116保持在期望的压力(诸如真空压力)下。波纹管130和波纹管132通常由金属材料(诸如不锈钢、英科耐尔(Inconel)合金)或其他合适的抗疲劳和导电材料形成。
图2是根据本公开中描述的至少一个实施例的升降器系统200的透视图。图3是仅底部碗升降器124的透视图,而图4是仅底座升降器126的透视图。如图2所示,升降器系统200包括底部碗升降器124和底座升降器126。底部碗升降器124包括底部碗托架202,底部碗托架202耦接并支撑底部碗122。底部碗122被配置成在工艺腔室100内移动。底座升降器126包括底座托架204,底座托架204耦接并支撑底座120。底座120可以升高和降低,并且还可以在任何方向上倾斜(俯仰(pitch)和滚转(roll)),这将在下面进一步描述。底部碗托架202和底座托架204经由波纹管130(图1)彼此附接,使得底座升降器126部件可以独立地移动而不受底部碗升降器124部件的干扰。如上所述,波纹管130和冷却毂208在底座升降器126与底部碗升降器124之间提供密封。由冷却毂208供应的水流过底部碗托架202,以在处理期间提供冷却。底部碗托架202和基座托架204经由两个轴定位器210同轴地支撑。底部碗升降器124包括骨干结构212(图2和图3),骨干结构212使用运动安装件(kinematic mounts)214附接到底部碗托架202,运动安装件214提供底部碗122相对于工艺腔室100的底部106上的参考表面的角度调节。
参照图3,底部碗升降器124包括致动器组件302和一个或多个引导件303。致动器组件302用于使底部碗托架202在交换位置与工艺位置(下面在图5A-5B中讨论)之间垂直地向上和向下(即,Z-方向)移动。致动器组件302附接到骨干结构212和底部碗托架202。如上所述,骨干结构212提供底部碗升降器124组件的角度调节,使得可以相对于工艺腔室内的部件而独立地调节由底部碗托架202支撑的底部碗122的角度对准。致动器组件302可包括线性致动器,诸如线性马达、气缸、或滚珠螺杆致动器。致动器组件302可包括伺服马达系统304并由伺服马达系统304驱动。伺服马达系统304可通过使用绝对编码器、伺服马达和制动器(brake)来驱动致动器组件302。一个或多个引导件303可以是滑动件并且可各自包括线性运动引导件,以允许在骨干结构212与底部碗托架202之间的相对线性运动。这将底部碗托架202在底部碗托架202的工艺位置和转移位置之间引导。
参照图4,底座升降器126包括用于支撑基板118(图1)的底座120。如上所述,底座120由底座托架204支撑。冷却毂208提供水流以在处理期间保持底座托架204(和底部碗122)冷却,所述处理在一些情况下可能超过700摄氏度。底座升降器126被配置成操纵底座120相对于喷头112的输出表面114(图1)的位置和/或取向。在此实施例中,底座升降器126利用与底座托架204的三个接触点来建立托架120相对于喷头112的输出表面114的水准平面(leveling plane)。
底座托架204通常适配成通过使用多个致动器402在平行于中心轴401的方向上垂直移动。在这些实施例中,有三个致动器402,但是可以使用多于或少于三个致动器。类似于上文讨论的致动器组件302,致动器402可各自包括线性致动器,诸如线性马达、气缸、或滚珠螺杆致动器。致动器402的顶端附接到基座组件410,基座组件410附接到工艺腔室100的底部106上的参考表面。球形接头组件406将致动器402耦接至底座托架204,并且促进底座托架204与致动器402之间的运动。在一些实施例中,球形接头组件406允许围绕形成在底座托架204上的附接点的三个自由度(俯仰、偏航(yaw)和滚转)。致动器402被配置成引起底座120与底部碗122之间的相对线性运动和角运动。挠性铰链412在一端附接到基座组件410,而在另一端附接到致动器402。在此实施例中,配置在相对的支撑位置中的三个致动器402的组合完全约束了底座托架135的运动,同时给予底座升降器126以4个自由度(例如,高度(elevation)(Z-方向)、俯仰、偏航和滚转)移动的灵活性。挠性铰链412由于由致动器402的不同运动产生的力矩而弯曲,所述弯曲使底座托架204在相对于中心轴401的方向上枢转。每个挠性铰链412为每个致动器402提供极硬的安装点以抵抗组件上的负载,同时允许在每个致动器402处发生少量(<0.5度)的旋转。挠性铰链412还用作组件中的球形接头组件406的径向预载(radial preload)。
伺服马达404驱动致动器402,并且因此沿着致动器402在垂直方向(Z-方向)上驱动球形接头组件406和底座托架204。在操作中,系统控制器(未示出)驱动使用动态运动曲线连续地移动致动器402的伺服马达404,以操纵底座120的位置和/或取向。这样的操作可以允许底座120相对于喷头112的输出表面114的位置和/或取向随着底座120沿中心轴401枢转和/或移动而连续变化。通过连续地驱动伺服马达404,底座120的取向将相对于静止的参考系(例如,X-Y-Z参考系)在一个或多个方向上连续地移动。已经发现,使用多个致动器402保持相对于喷头112的输出表面114连续的倾斜并且使底座120围绕中心轴401进动(precess)一段时间,会导致某些CVD沉积膜的沉积有改善的工艺均匀性。然而,如上所述,仍然需要减少和/或防止在底座120下方的区域内产生寄生等离子体,这可以通过使用控制底部碗122的位置的底部碗升降器124来解决。如上所述,由于底座升降器126和底部碗升降器124的配置,两个组件各自能够被单独地调节和控制,使得它们各自的硬件部件的取向和位置独立地移动。因此,本文所述的各种实施例允许这些组件中的每个组件中的部件与工艺腔室内的一个或多个不同部件适当地且分别地对准,以在基板上提供期望地形成或处理的膜,并且还防止寄生等离子体的产生,寄生等离子体会产生颗粒并且产生不期望的处理结果(例如,低沉积速率、不良均匀性等)。
图5A示出了处于交换位置的升降器系统500,而图5B标出了处于工艺位置的升降器系统500。当升降器系统500处于交换位置时,底部碗122通过底部碗升降器124在工艺腔室502的底部504附近向下下降。此外,当升降器系统500处于交换位置时,由底座升降器126将底座120降低到一定位置,使得底座120可以通过穿过工艺腔室502形成的狭缝阀507接收基板118。狭缝阀507允许将基板118(图1)放置在底座120的顶表面120A上,使得在处理期间可以在基板118上制造半导体膜。
当升降器系统500处于工艺位置时,底部碗122由底部碗升降器124升高,使得通过使底部碗122的上端122A(图1和图5B)接触工艺腔室的上部区域101内的部件(诸如边缘环123)来在工艺腔室502内形成内部容积121(图1)。这减小了底座120下方的工艺容积,并且还为RF能量提供了传播到地的更短且对称的路径,以减少寄生等离子体的产生,从而增加沉积速率、减少产生颗粒的机会、并且改善沉积的膜的均匀性。此外,底座升降器126提升底座120,使得底座120的顶表面120A靠近位于工艺腔室502的上部区域101内的喷头506。如上所述,底座升降器126还被配置成将底座120升高到靠近喷头506的输出表面510。底座120的顶表面120A被定向成使得底座120的顶表面120A相对于喷头506的输出表面510不共面。此外,底座120的顶表面120A可以倾斜而无需调节底部碗122的位置。如上所述,底座升降器126被配置成使得当底部碗122被提升到工艺腔室502内远离底座120的分开的区域时,底座120独立地移动而不受底部碗122的干扰。
如以上在图1中所讨论的,气体通过工艺腔室502的上部区域101内的喷头506被提供。气体随后通过喷头506分配到输出表面510,并且随后分配到工艺区域512,在工艺区域512中,在位于底座120的顶表面120A上的基板118上形成半导体膜。当底座120的顶表面120A相对于喷头506的输出表面510不共面时,第一材料层可以被沉积在基板118上。当底座120处于此取向时,可以分配任意数量的材料层,或者在将另一材料层施加到基板118上之前,底座120可以相对于喷头506的输出表面510以不同的取向定位。倾斜底座120的优点是改善在工艺腔室中执行的工艺(诸如膜沉积)的均匀性。底座120的位置可以针对每个工艺进行微调。底部碗122和底部碗升降器124的增加允许实现单独地倾斜底座120的能力的益处,同时还允许形成提供额外的基板处理益处的工艺腔室502内的较小的内部容积121,如上文所述。
尽管前述内容是针对本公开的实施例,但可在不脱离本公开的基本范围的情况下设计本公开的其他和进一步的实施例,并且本公开的范围由所附权利要求确定。
Claims (15)
1.一种升降组件,包括:
底座,所述底座具有基板支撑表面和侧壁,所述侧壁限定所述底座的外部尺寸;
底部碗升降器,包括:
底部碗,所述底部碗包括壁,所述壁具有大于所述底座的所述外部尺寸的内部尺寸;
底部碗托架,所述底部碗托架被配置成支撑所述底部碗;
底部碗致动器组件,所述底部碗致动器组件被配置成使所述底部碗托架在所述第一方向上平移;以及
底座升降器,包括:
底座托架,所述底座托架耦接至所述底座;以及
多个致动器,其中所述多个致动器中的每个致动器耦接至所述底座托架的单独部分,并且所述多个致动器被配置成当所述多个致动器中的一个或多个致动器使所述底座托架的至少一部分在所述第一方向上平移时,在所述底座与所述底部碗之间引起相对线性运动和角运动。
2.如权利要求1所述的升降组件,其中所述底部碗托架和所述底座托架经由波纹管附接在一起,所述波纹管在所述底部碗升降器与所述底座升降器之间形成密封。
3.如权利要求1所述的升降组件,其中所述底部碗致动器组件进一步包括底部碗致动器和一个或多个引导件,其中所述一个或多个引导件耦接至骨干结构和所述底部碗托架,并且所述一个或多个引导件被配置成当所述底部碗致动器使所述底部碗托架在第一方向上平移时,允许所述骨干结构与所述底部托架之间在所述第一方向上的相对线性运动。
4.如权利要求1所述的升降组件,进一步包括挠性铰链,所述挠性铰链具有第一端和第二端,其中所述挠性铰链中的每个挠性铰链在所述第一端附接到基座组件,并且在所述第二端附接到所述多个致动器中的一个致动器。
5.如权利要求1所述的升降组件,进一步包括冷却毂,所述冷却毂附接到所述底部碗托架和所述底座托架。
6.如权利要求1所述的升降组件,其中所述多个致动器包括三个致动器。
7.一种用于升降器系统的方法,包括:
将底部碗升降器降低到交换位置,使得底部碗处于靠近工艺腔室的底表面的降低的位置,其中所述底部碗包括壁,所述壁具有限定内部容积的内表面;
将所述底部碗升降器提升到与所述工艺腔室的所述底表面相距一定距离的工艺位置;
将底座的所述顶表面相对于喷头的输出表面以第一取向定向,其中
所述底座的所述顶表面的所述第一取向相对于所述喷头的所述输出表面不共面;以及
所述底座可定位在所述底部碗的内部容积内;以及
在所述底座的所述顶表面以所述第一取向定向并且所述底部碗升降器处于所述工艺位置的同时,在设置在所述底座的所述顶表面上的基板上沉积第一材料层。
8.如权利要求7所述的方法,其中所述升降器系统包括底部碗托架和底座托架,其中所述底部碗托架耦接至所述底部碗,并且所述底座托架耦接至所述底座。
9.如权利要求7所述的方法,其中所述升降器系统包括多个致动器,所述多个致动器被配置成引起所述底座与所述底部碗之间的相对线性运动和角运动。
10.一种升降器系统,包括:
底座,所述底座具有基板支撑表面和侧壁,所述侧壁限定所述底座的外部尺寸;
底部碗升降器,包括:
底部碗,所述底部碗包括壁,所述壁具有大于所述底座的所述外部尺寸的内部尺寸;
底部碗托架,所述底部碗托架被配置成支撑所述底部碗;
底部碗致动器组件,所述底部碗致动器组件被配置成使所述底部碗托架在交换位置与工艺位置之间移动,所述交换位置使得底部碗处于靠近工艺腔室的底部的降低的位置,所述工艺位置使得所述底部碗处于相对于所述工艺腔室的所述底部的升高的位置;以及
底座升降器,包括:
底座托架,所述底座托架被配置成支撑所述底座,其中所述底座可定位在所述底部碗的内部容积内;以及
多个致动器,其中所述多个致动器中的每个致动器耦接至所述底座托架的单独部分,并且所述多个致动器被配置成将所述底座升高到靠近喷头的输出表面,并且将所述底座的顶表面相对于所述喷头的所述输出表面以第一取向定向,其中所述底座的所述顶表面的所述第一取向相对于所述喷头的所述输出表面不共面。
11.如权利要求10所述的升降器系统,其中所述底部碗的下端进一步包括波纹管,所述波纹管具有第一端和第二端,所述波纹管的所述第一端耦接至所述壁,并且所述波纹管的所述第二端密封至所述工艺腔室的所述底部的一部分。
12.如权利要求10所述的升降器系统,进一步包括球形接头组件,其中所述球形接头组件中的每个球形接头组件将所述多个致动器中的一个致动器耦接至所述底座托架。
13.如权利要求12所述的升降器系统,其中所述球形接头组件允许围绕附接点的三个自由度(俯仰、偏航和滚转)。
14.如权利要求10所述的升降器系统,进一步包括挠性铰链,所述挠性铰链具有第一端和第二端,其中所述挠性铰链中的每个挠性铰链在所述第一端附接到基座组件,并且在所述第二端附接到所述多个致动器中的一个致动器。
15.如权利要求10所述的升降器系统,进一步包括冷却毂,所述冷却毂附接到所述底部碗托架和所述底座托架。
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US20230360955A1 (en) | 2023-11-09 |
US20230360956A1 (en) | 2023-11-09 |
CN117305815A (zh) | 2023-12-29 |
TW202025342A (zh) | 2020-07-01 |
TW202403937A (zh) | 2024-01-16 |
KR20210055088A (ko) | 2021-05-14 |
SG11202101649WA (en) | 2021-04-29 |
US11742235B2 (en) | 2023-08-29 |
CN112639164B (zh) | 2023-10-10 |
US20200105573A1 (en) | 2020-04-02 |
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