SG10201901906YA - Atmospheric epitaxial deposition chamber - Google Patents
Atmospheric epitaxial deposition chamberInfo
- Publication number
- SG10201901906YA SG10201901906YA SG10201901906YA SG10201901906YA SG10201901906YA SG 10201901906Y A SG10201901906Y A SG 10201901906YA SG 10201901906Y A SG10201901906Y A SG 10201901906YA SG 10201901906Y A SG10201901906Y A SG 10201901906YA SG 10201901906Y A SG10201901906Y A SG 10201901906YA
- Authority
- SG
- Singapore
- Prior art keywords
- epitaxial deposition
- assembly
- radiant energy
- deposition chamber
- liner
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/08—Germanium
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
Abstract
Embodiments described herein disclose epitaxial deposition chambers and components thereof. In one embodiment, a chamber can include a substrate support positioned in a processing region, a radiant energy assembly comprising a plurality of radiant energy sources, a liner assembly having an upper liner and a lower liner, and a dome assembly positioned between the substrate support and the radiant energy assembly. The epitaxial deposition chambers described herein allow for processing of larger substrates, while maintaining throughput, reducing costs and providing a reliably uniform deposition product.
Applications Claiming Priority (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201462046451P | 2014-09-05 | 2014-09-05 | |
US201462046414P | 2014-09-05 | 2014-09-05 | |
US201462046377P | 2014-09-05 | 2014-09-05 | |
US201462046400P | 2014-09-05 | 2014-09-05 | |
US201462046559P | 2014-09-05 | 2014-09-05 | |
US14/584,441 US10760161B2 (en) | 2014-09-05 | 2014-12-29 | Inject insert for EPI chamber |
US14/826,065 US11060203B2 (en) | 2014-09-05 | 2015-08-13 | Liner for epi chamber |
US14/826,287 US20160068996A1 (en) | 2014-09-05 | 2015-08-14 | Susceptor and pre-heat ring for thermal processing of substrates |
US14/826,310 US20160071749A1 (en) | 2014-09-05 | 2015-08-14 | Upper dome for epi chamber |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201901906YA true SG10201901906YA (en) | 2019-04-29 |
Family
ID=55440346
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201901906YA SG10201901906YA (en) | 2014-09-05 | 2015-09-02 | Atmospheric epitaxial deposition chamber |
SG11201701463XA SG11201701463XA (en) | 2014-09-05 | 2015-09-02 | Atmospheric epitaxial deposition chamber |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201701463XA SG11201701463XA (en) | 2014-09-05 | 2015-09-02 | Atmospheric epitaxial deposition chamber |
Country Status (5)
Country | Link |
---|---|
KR (1) | KR20170048578A (en) |
CN (1) | CN106715753B (en) |
SG (2) | SG10201901906YA (en) |
TW (1) | TWI673396B (en) |
WO (1) | WO2016036868A1 (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7384784B2 (en) | 2017-08-11 | 2023-11-21 | アプライド マテリアルズ インコーポレイテッド | Apparatus and method for improving uniformity in thermal chemical vapor deposition (CVD) |
CN112639164B (en) * | 2018-09-28 | 2023-10-10 | 应用材料公司 | Coaxial lifting device with dynamic leveling function |
CN111831022B (en) * | 2019-04-18 | 2022-03-18 | 北京七星华创流量计有限公司 | Chamber pressure control method and device and semiconductor equipment |
KR102263006B1 (en) * | 2019-07-18 | 2021-06-10 | 세메스 주식회사 | Substrate processing apparatus |
US20220056583A1 (en) * | 2020-08-18 | 2022-02-24 | Globalwafers Co., Ltd. | Window for chemical vapor deposition systems and related methods |
KR102457294B1 (en) * | 2020-09-15 | 2022-10-21 | 에스케이실트론 주식회사 | Dome assembly and epitaxial reactor |
CN113278953B (en) * | 2021-03-26 | 2022-06-17 | 华灿光电(苏州)有限公司 | Graphite substrate |
US20220352006A1 (en) * | 2021-04-30 | 2022-11-03 | Asm Ip Holding B.V. | Susceptors with film deposition control features |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5837058A (en) * | 1996-07-12 | 1998-11-17 | Applied Materials, Inc. | High temperature susceptor |
US6099648A (en) * | 1997-08-06 | 2000-08-08 | Applied Materials, Inc. | Domed wafer reactor vessel window with reduced stress at atmospheric and above atmospheric pressures |
US6143079A (en) * | 1998-11-19 | 2000-11-07 | Asm America, Inc. | Compact process chamber for improved process uniformity |
JP4841873B2 (en) * | 2005-06-23 | 2011-12-21 | 大日本スクリーン製造株式会社 | Heat treatment susceptor and heat treatment apparatus |
TW200802552A (en) * | 2006-03-30 | 2008-01-01 | Sumco Techxiv Corp | Method of manufacturing epitaxial silicon wafer and apparatus thereof |
US20080017116A1 (en) * | 2006-07-18 | 2008-01-24 | Jeffrey Campbell | Substrate support with adjustable lift and rotation mount |
DE102008034260B4 (en) * | 2008-07-16 | 2014-06-26 | Siltronic Ag | Method for depositing a layer on a semiconductor wafer by means of CVD in a chamber and chamber for depositing a layer on a semiconductor wafer by means of CVD |
US9127360B2 (en) * | 2009-10-05 | 2015-09-08 | Applied Materials, Inc. | Epitaxial chamber with cross flow |
US8404048B2 (en) * | 2011-03-11 | 2013-03-26 | Applied Materials, Inc. | Off-angled heating of the underside of a substrate using a lamp assembly |
US20120270384A1 (en) * | 2011-04-22 | 2012-10-25 | Applied Materials, Inc. | Apparatus for deposition of materials on a substrate |
WO2013162972A1 (en) * | 2012-04-25 | 2013-10-31 | Applied Materials, Inc. | Process chamber having separate process gas and purge gas regions |
-
2015
- 2015-09-02 SG SG10201901906YA patent/SG10201901906YA/en unknown
- 2015-09-02 WO PCT/US2015/048167 patent/WO2016036868A1/en active Application Filing
- 2015-09-02 KR KR1020177009328A patent/KR20170048578A/en not_active Application Discontinuation
- 2015-09-02 SG SG11201701463XA patent/SG11201701463XA/en unknown
- 2015-09-02 CN CN201580047552.0A patent/CN106715753B/en active Active
- 2015-09-04 TW TW104129370A patent/TWI673396B/en active
Also Published As
Publication number | Publication date |
---|---|
TW201617488A (en) | 2016-05-16 |
SG11201701463XA (en) | 2017-03-30 |
TWI673396B (en) | 2019-10-01 |
CN106715753A (en) | 2017-05-24 |
KR20170048578A (en) | 2017-05-08 |
WO2016036868A1 (en) | 2016-03-10 |
CN106715753B (en) | 2020-03-17 |
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