KR102789697B1 - 동적 레벨링을 갖는 동축 리프트 디바이스 - Google Patents

동적 레벨링을 갖는 동축 리프트 디바이스 Download PDF

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Publication number
KR102789697B1
KR102789697B1 KR1020217011257A KR20217011257A KR102789697B1 KR 102789697 B1 KR102789697 B1 KR 102789697B1 KR 1020217011257 A KR1020217011257 A KR 1020217011257A KR 20217011257 A KR20217011257 A KR 20217011257A KR 102789697 B1 KR102789697 B1 KR 102789697B1
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South Korea
Prior art keywords
pedestal
lift
bowl
lowermost
carrier
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KR1020217011257A
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English (en)
Korean (ko)
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KR20210055088A (ko
Inventor
제이슨 엠 쉘러
제프리 찰스 블라닉
아미트 쿠마르 반살
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Priority to KR1020257009907A priority Critical patent/KR20250048484A/ko
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01L21/68742—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20221—Translation
    • H01J2237/20235—Z movement or adjustment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Forklifts And Lifting Vehicles (AREA)
  • Physical Vapour Deposition (AREA)
KR1020217011257A 2018-09-28 2019-08-28 동적 레벨링을 갖는 동축 리프트 디바이스 Active KR102789697B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020257009907A KR20250048484A (ko) 2018-09-28 2019-08-28 동적 레벨링을 갖는 동축 리프트 디바이스

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862738869P 2018-09-28 2018-09-28
US62/738,869 2018-09-28
PCT/US2019/048529 WO2020068343A1 (en) 2018-09-28 2019-08-28 Coaxial lift device with dynamic leveling

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020257009907A Division KR20250048484A (ko) 2018-09-28 2019-08-28 동적 레벨링을 갖는 동축 리프트 디바이스

Publications (2)

Publication Number Publication Date
KR20210055088A KR20210055088A (ko) 2021-05-14
KR102789697B1 true KR102789697B1 (ko) 2025-03-31

Family

ID=69946575

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020217011257A Active KR102789697B1 (ko) 2018-09-28 2019-08-28 동적 레벨링을 갖는 동축 리프트 디바이스
KR1020257009907A Pending KR20250048484A (ko) 2018-09-28 2019-08-28 동적 레벨링을 갖는 동축 리프트 디바이스

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020257009907A Pending KR20250048484A (ko) 2018-09-28 2019-08-28 동적 레벨링을 갖는 동축 리프트 디바이스

Country Status (7)

Country Link
US (3) US11742235B2 (https=)
JP (2) JP7475337B2 (https=)
KR (2) KR102789697B1 (https=)
CN (2) CN117305815B (https=)
SG (1) SG11202101649WA (https=)
TW (2) TWI897025B (https=)
WO (1) WO2020068343A1 (https=)

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WO2021225890A1 (en) * 2020-05-04 2021-11-11 Lam Research Corporation Increasing plasma uniformity in a receptacle
JP7488138B2 (ja) * 2020-07-07 2024-05-21 東京エレクトロン株式会社 真空処理装置、及び真空処理装置の制御方法
US11501957B2 (en) * 2020-09-03 2022-11-15 Applied Materials, Inc. Pedestal support design for precise chamber matching and process control
CN112736020B (zh) * 2020-12-31 2024-06-07 拓荆科技股份有限公司 晶圆支撑销升降装置
JP7664717B2 (ja) * 2021-03-12 2025-04-18 東京エレクトロン株式会社 真空処理装置および傾き調整方法
US12227847B2 (en) * 2021-03-31 2025-02-18 Applied Materials, Inc. Level monitoring and active adjustment of a substrate support assembly
JP7630004B2 (ja) * 2021-04-02 2025-02-14 アプライド マテリアルズ インコーポレイテッド 電界誘導される露光後ベークプロセス用のプロセスセル
KR102680985B1 (ko) 2022-06-16 2024-07-04 세메스 주식회사 회수 용기 승강 조립체 및 기판 처리 장치
KR102623522B1 (ko) 2022-06-16 2024-01-10 세메스 주식회사 회수 용기 승강 조립체 및 기판 처리 장치
US12405225B2 (en) * 2022-12-06 2025-09-02 Kla Corporation Lifter assembly with bellows for optical inspection system
US12428753B2 (en) * 2022-12-14 2025-09-30 Applied Materials, Inc. Lift assemblies, and related methods and components, for substrate processing chambers
US20250308862A1 (en) * 2024-03-27 2025-10-02 Applied Materials, Inc. Leveling systems and methods

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US20180211820A1 (en) * 2017-01-25 2018-07-26 Applied Materials, Inc. Method and apparatus for semiconductor processing chamber isolation for reduced particles and improved uniformity

Also Published As

Publication number Publication date
TW202403937A (zh) 2024-01-16
CN112639164B (zh) 2023-10-10
US20230360956A1 (en) 2023-11-09
JP2024102103A (ja) 2024-07-30
US20200105573A1 (en) 2020-04-02
JP7712418B2 (ja) 2025-07-23
KR20210055088A (ko) 2021-05-14
TW202025342A (zh) 2020-07-01
CN117305815A (zh) 2023-12-29
KR20250048484A (ko) 2025-04-08
TWI897025B (zh) 2025-09-11
WO2020068343A1 (en) 2020-04-02
JP2022502846A (ja) 2022-01-11
US20230360955A1 (en) 2023-11-09
JP7475337B2 (ja) 2024-04-26
US11742235B2 (en) 2023-08-29
CN112639164A (zh) 2021-04-09
TWI816876B (zh) 2023-10-01
SG11202101649WA (en) 2021-04-29
CN117305815B (zh) 2026-02-27

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