JP7470848B2 - 半導体装置 - Google Patents
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- JP7470848B2 JP7470848B2 JP2023116705A JP2023116705A JP7470848B2 JP 7470848 B2 JP7470848 B2 JP 7470848B2 JP 2023116705 A JP2023116705 A JP 2023116705A JP 2023116705 A JP2023116705 A JP 2023116705A JP 7470848 B2 JP7470848 B2 JP 7470848B2
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Description
6 ソース・ドレイン外部端子
7 第1ゲート外部端子
8 ドレイン外部端子
9 第2ゲート外部端子
10 ソース外部端子
23 電子走行層
24 電子供給層
26 半導体積層構造部(半導体層)
29A 第1二次元電子ガス領域
29B 第2二次元電子ガス領域
31 第1デバイス形成領域
32 第2デバイス形成領域
33 第1HEMT
34 第2HEMT
35 領域分離構造
36 領域分離トレンチ
37 埋設絶縁体
51 第1ソース電極
52 第1ドレイン電極
53 第2ソース電極
54 第2ドレイン電極
74 第1ゲートコンタクト孔
76 第2ゲートコンタクト孔
81 第1ゲート絶縁層
82 第1ゲート電極
83 第2ゲート絶縁層
84 第2ゲート電極
151 ソース・ドレイン配線層
152 第1ゲート配線層
153 ドレイン配線層
154 第2ゲート配線層
155 ソース配線層
211 半導体装置
X 第1方向
Y 第2方向
Claims (20)
- 電子走行層および前記電子走行層の上に形成された電子供給層を含む半導体層と、
前記半導体層において第1方向Xの一方側に設けられた第1デバイス領域と、
前記半導体層において前記第1方向Xの他方側に設けられた第2デバイス領域と、
前記第1デバイス領域および前記第2デバイス領域を分離するように前記半導体層において前記電子供給層を貫通し、平面視において前記第1方向Xに直交する第2方向Yに延びる部分を有するトレンチと、
前記トレンチによって前記第1デバイス領域に区画されたチャネルとしての第1二次元電子ガス領域を有し、前記第1デバイス領域において前記半導体層の上に配置された第1ゲート電極、第1ドレイン電極および第1ソース電極を含む第1HEMTと、
前記トレンチによって前記第2デバイス領域に区画されたチャネルとしての第2二次元電子ガス領域を有し、前記第2デバイス領域において前記半導体層の上に配置された第2ゲート電極、第2ドレイン電極および第2ソース電極を含む第2HEMTと、
前記第1HEMTの前記第1ソース電極および前記第2HEMTの前記第2ドレイン電極に電気的に接続されるように前記第1ソース電極および前記第2ドレイン電極の上に配置され、平面視において前記トレンチの前記第2方向Yに延びる部分に直交するように前記第1方向Xに帯状に延びるソース・ドレイン配線と、
前記ソース・ドレイン配線のうち前記トレンチの前記第2方向Yに延びる部分に直交する部分に電気的に接続されるように前記ソース・ドレイン配線の上に配置され、平面視において前記ソース・ドレイン配線と直角を成すように前記トレンチの前記第2方向Yに延びる部分に沿って前記第2方向Yに帯状に延びるソース・ドレイン外部端子と、を含む、半導体装置。 - 前記第1ドレイン電極に電気的に接続されるように前記第1ドレイン電極の上に配置され、平面視において少なくとも前記第1方向Xに帯状に延びる部分を有するドレイン配線と、
前記第2ソース電極に電気的に接続されるように前記第2ソース電極の上に配置され、平面視において少なくとも前記第1方向Xに帯状に延びる部分を有するソース配線と、をさらに含む、請求項1に記載の半導体装置。 - 前記ソース・ドレイン外部端子は、平面視において前記ドレイン配線および前記ソース配線に直交している、請求項2に記載の半導体装置。
- 前記ドレイン配線は、前記ソース・ドレイン配線と同一の層に配置され、
前記ソース配線は、前記ソース・ドレイン配線と同一の層に配置されている、請求項2または3に記載の半導体装置。 - 前記ドレイン配線に電気的に接続されるように前記ドレイン配線の上に配置されたドレイン外部端子と、
前記ソース配線に電気的に接続されるように前記ソース配線の上に配置されたソース外部端子と、をさらに含む、請求項2~4のいずれか一項に記載の半導体装置。 - 前記ドレイン外部端子は、前記第1デバイス領域の上に配置されている、請求項5に記載の半導体装置。
- 前記ドレイン外部端子は、平面視において前記ドレイン配線に直交するように前記第2方向Yに帯状に延びている、請求項5または6に記載の半導体装置。
- 前記ソース外部端子は、前記第2デバイス領域の上に配置されている、請求項5~7のいずれか一項に記載の半導体装置。
- 前記ソース外部端子は、平面視において前記ソース配線に直交するように前記第2方向Yに帯状に延びている、請求項5~8のいずれか一項に記載の半導体装置。
- 前記ドレイン外部端子および前記ソース外部端子は、平面視において前記ソース・ドレイン外部端子を挟み込んでいる、請求項5~9のいずれか一項に記載の半導体装置。
- 前記第1ドレイン電極および前記第1ソース電極は、前記第1デバイス領域において前記電子供給層に電気的に接続されており、
前記第2ドレイン電極および前記第2ソース電極は、前記第2デバイス領域において前記電子供給層に電気的に接続されている、請求項1~10のいずれか一項に記載の半導体装置。 - 前記トレンチは、断面視においてテーパ形状に形成されている、請求項1~11のいずれか一項に記載の半導体装置。
- 前記トレンチに埋設された絶縁体をさらに含む、請求項1~12のいずれか一項に記載の半導体装置。
- 前記絶縁体は、前記トレンチ内に位置された部分および前記トレンチ外に位置された部分を有している、請求項13に記載の半導体装置。
- 前記絶縁体は、前記トレンチの底壁に向かって窪んだ凹部を含む上面を有している、請求項13または14に記載の半導体装置。
- 前記絶縁体の前記凹部の内外を被覆し、平坦な上面を有する上側絶縁層をさらに含む、請求項15に記載の半導体装置。
- 前記ソース・ドレイン配線を被覆する樹脂層をさらに含み、
前記ソース・ドレイン外部端子は、前記樹脂層の上面よりも上方に突出している、請求項1~16のいずれか一項に記載の半導体装置。 - 基板をさらに含み、
前記半導体層は、前記基板の上に積層されている、請求項1~17のいずれか一項に記載の半導体装置。 - 前記半導体層は、前記基板の上に積層されたバッファ層、および、前記バッファ層の上に形成された前記電子走行層を含む、請求項18に記載の半導体装置。
- 前記第1HEMTおよび前記第2HEMTは、互いに独立して制御される、請求項1~19のいずれか一項に記載の半導体装置。
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