JP7458950B2 - 描画システム - Google Patents

描画システム Download PDF

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Publication number
JP7458950B2
JP7458950B2 JP2020158775A JP2020158775A JP7458950B2 JP 7458950 B2 JP7458950 B2 JP 7458950B2 JP 2020158775 A JP2020158775 A JP 2020158775A JP 2020158775 A JP2020158775 A JP 2020158775A JP 7458950 B2 JP7458950 B2 JP 7458950B2
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JP
Japan
Prior art keywords
substrate
pattern
stage
alignment mark
main surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2020158775A
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English (en)
Japanese (ja)
Other versions
JP2022052397A (ja
Inventor
直人 早川
望 原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Screen Holdings Co Ltd
Original Assignee
Screen Holdings Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Screen Holdings Co Ltd filed Critical Screen Holdings Co Ltd
Priority to JP2020158775A priority Critical patent/JP7458950B2/ja
Priority to TW110121274A priority patent/TWI778659B/zh
Priority to KR1020210090861A priority patent/KR102653607B1/ko
Priority to CN202110993331.XA priority patent/CN114253086A/zh
Publication of JP2022052397A publication Critical patent/JP2022052397A/ja
Application granted granted Critical
Publication of JP7458950B2 publication Critical patent/JP7458950B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/708—Mark formation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7019—Calibration
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lubricants (AREA)
  • Low-Molecular Organic Synthesis Reactions Using Catalysts (AREA)
  • Engine Equipment That Uses Special Cycles (AREA)
JP2020158775A 2020-09-23 2020-09-23 描画システム Active JP7458950B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2020158775A JP7458950B2 (ja) 2020-09-23 2020-09-23 描画システム
TW110121274A TWI778659B (zh) 2020-09-23 2021-06-11 描繪系統
KR1020210090861A KR102653607B1 (ko) 2020-09-23 2021-07-12 묘화 시스템
CN202110993331.XA CN114253086A (zh) 2020-09-23 2021-08-26 描画系统

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020158775A JP7458950B2 (ja) 2020-09-23 2020-09-23 描画システム

Publications (2)

Publication Number Publication Date
JP2022052397A JP2022052397A (ja) 2022-04-04
JP7458950B2 true JP7458950B2 (ja) 2024-04-01

Family

ID=80791375

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020158775A Active JP7458950B2 (ja) 2020-09-23 2020-09-23 描画システム

Country Status (4)

Country Link
JP (1) JP7458950B2 (ko)
KR (1) KR102653607B1 (ko)
CN (1) CN114253086A (ko)
TW (1) TWI778659B (ko)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004006527A (ja) 2002-05-31 2004-01-08 Canon Inc 位置検出装置及び位置検出方法、露光装置、デバイス製造方法並びに基板
JP2005195877A (ja) 2004-01-07 2005-07-21 Seiko Epson Corp レチクル及び半導体装置の製造方法
JP2009223262A (ja) 2008-03-19 2009-10-01 Orc Mfg Co Ltd 露光システムおよび露光方法
JP2013213852A (ja) 2012-03-30 2013-10-17 Fujifilm Corp 露光描画装置及び露光描画方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100254024B1 (ko) * 1990-07-23 2000-06-01 가나이 쓰도무 반도체 장치의 제조 방법
JP3224041B2 (ja) * 1992-07-29 2001-10-29 株式会社ニコン 露光方法及び装置
JP2994232B2 (ja) * 1995-07-28 1999-12-27 ウシオ電機株式会社 マスクとマスクまたはマスクとワークの位置合わせ方法および装置
JP2000155430A (ja) * 1998-11-24 2000-06-06 Nsk Ltd 両面露光装置における自動アライメント方法
US6664012B2 (en) * 2002-05-10 2003-12-16 Anvik Corporation Through-the-lens alignment for photolithography
US7476490B2 (en) * 2004-06-25 2009-01-13 Asml Netherlands B.V. Method for producing a marker on a substrate, lithographic apparatus and device manufacturing method
JP2008124142A (ja) * 2006-11-09 2008-05-29 Dainippon Screen Mfg Co Ltd 位置検出方法、位置検出装置、パターン描画装置及び被検出物
JP5245506B2 (ja) * 2008-04-16 2013-07-24 株式会社ニコン ステージ装置、露光方法及び装置、並びにデバイス製造方法
JP5813556B2 (ja) * 2012-03-30 2015-11-17 株式会社アドテックエンジニアリング 露光描画装置、プログラム及び露光描画方法
CN104714373B (zh) * 2015-03-23 2016-10-19 上海新微技术研发中心有限公司 硅片正背面图形高精度转移的方法
JP6925783B2 (ja) * 2016-05-26 2021-08-25 株式会社アドテックエンジニアリング パターン描画装置及びパターン描画方法
CN107966881B (zh) * 2017-03-15 2018-11-23 上海微电子装备（集团）股份有限公司 光刻装置及方法
JP6783172B2 (ja) * 2017-03-24 2020-11-11 株式会社Ｓｃｒｅｅｎホールディングス 描画装置および描画方法
JP6900284B2 (ja) * 2017-09-27 2021-07-07 株式会社Ｓｃｒｅｅｎホールディングス 描画装置および描画方法
JP7412872B2 (ja) * 2017-10-31 2024-01-15 株式会社アドテックエンジニアリング 両面露光装置
JP6994806B2 (ja) * 2017-10-31 2022-01-14 株式会社アドテックエンジニアリング 両面露光装置及び両面露光方法
JP6978284B2 (ja) * 2017-11-09 2021-12-08 株式会社日立ハイテクファインシステムズ 露光システム、露光方法、及び表示用パネル基板の製造方法
JP7045890B2 (ja) * 2018-03-20 2022-04-01 株式会社Ｓｃｒｅｅｎホールディングス パターン描画装置およびパターン描画方法
JP7084227B2 (ja) * 2018-06-22 2022-06-14 株式会社Ｓｃｒｅｅｎホールディングス マーク位置検出装置、描画装置およびマーク位置検出方法
JP2020046581A (ja) * 2018-09-20 2020-03-26 株式会社Ｓｃｒｅｅｎホールディングス 描画装置および描画方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004006527A (ja) 2002-05-31 2004-01-08 Canon Inc 位置検出装置及び位置検出方法、露光装置、デバイス製造方法並びに基板
US20050242285A1 (en) 2002-05-31 2005-11-03 Canon Kabushiki Kaisha Position detection apparatus, position detection method, exposure apparatus, device manufacturing method, and substrate
JP2005195877A (ja) 2004-01-07 2005-07-21 Seiko Epson Corp レチクル及び半導体装置の製造方法
JP2009223262A (ja) 2008-03-19 2009-10-01 Orc Mfg Co Ltd 露光システムおよび露光方法
JP2013213852A (ja) 2012-03-30 2013-10-17 Fujifilm Corp 露光描画装置及び露光描画方法

Also Published As

Publication number Publication date
TWI778659B (zh) 2022-09-21
KR20220040365A (ko) 2022-03-30
TW202212985A (zh) 2022-04-01
JP2022052397A (ja) 2022-04-04
KR102653607B1 (ko) 2024-04-01
CN114253086A (zh) 2022-03-29

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