TWI778659B - 描繪系統 - Google Patents

描繪系統 Download PDF

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Publication number
TWI778659B
TWI778659B TW110121274A TW110121274A TWI778659B TW I778659 B TWI778659 B TW I778659B TW 110121274 A TW110121274 A TW 110121274A TW 110121274 A TW110121274 A TW 110121274A TW I778659 B TWI778659 B TW I778659B
Authority
TW
Taiwan
Prior art keywords
substrate
pattern
main surface
alignment mark
stage
Prior art date
Application number
TW110121274A
Other languages
English (en)
Chinese (zh)
Other versions
TW202212985A (zh
Inventor
早川直人
原望
Original Assignee
日商斯庫林集團股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 日商斯庫林集團股份有限公司 filed Critical 日商斯庫林集團股份有限公司
Publication of TW202212985A publication Critical patent/TW202212985A/zh
Application granted granted Critical
Publication of TWI778659B publication Critical patent/TWI778659B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7019—Calibration
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/708—Mark formation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lubricants (AREA)
  • Low-Molecular Organic Synthesis Reactions Using Catalysts (AREA)
  • Engine Equipment That Uses Special Cycles (AREA)
TW110121274A 2020-09-23 2021-06-11 描繪系統 TWI778659B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020158775A JP7458950B2 (ja) 2020-09-23 2020-09-23 描画システム
JP2020-158775 2020-09-23

Publications (2)

Publication Number Publication Date
TW202212985A TW202212985A (zh) 2022-04-01
TWI778659B true TWI778659B (zh) 2022-09-21

Family

ID=80791375

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110121274A TWI778659B (zh) 2020-09-23 2021-06-11 描繪系統

Country Status (4)

Country Link
JP (1) JP7458950B2 (ko)
KR (1) KR102653607B1 (ko)
CN (1) CN114253086A (ko)
TW (1) TWI778659B (ko)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201837601A (zh) * 2017-03-15 2018-10-16 大陸商上海微電子裝備（集團）股份有限公司 光蝕刻裝置及方法
TW201923485A (zh) * 2017-10-31 2019-06-16 日商亞多特克工程股份有限公司 兩面曝光裝置
TW202016984A (zh) * 2018-09-20 2020-05-01 日商斯庫林集團股份有限公司 描繪裝置以及描繪方法
TW202018422A (zh) * 2018-06-22 2020-05-16 日商斯庫林集團股份有限公司 標記位置檢測裝置、描繪裝置以及標記位置檢測方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100254024B1 (ko) * 1990-07-23 2000-06-01 가나이 쓰도무 반도체 장치의 제조 방법
JP3224041B2 (ja) * 1992-07-29 2001-10-29 株式会社ニコン 露光方法及び装置
JP2994232B2 (ja) * 1995-07-28 1999-12-27 ウシオ電機株式会社 マスクとマスクまたはマスクとワークの位置合わせ方法および装置
JP2000155430A (ja) * 1998-11-24 2000-06-06 Nsk Ltd 両面露光装置における自動アライメント方法
US6664012B2 (en) * 2002-05-10 2003-12-16 Anvik Corporation Through-the-lens alignment for photolithography
JP2004006527A (ja) 2002-05-31 2004-01-08 Canon Inc 位置検出装置及び位置検出方法、露光装置、デバイス製造方法並びに基板
JP2005195877A (ja) 2004-01-07 2005-07-21 Seiko Epson Corp レチクル及び半導体装置の製造方法
US7476490B2 (en) * 2004-06-25 2009-01-13 Asml Netherlands B.V. Method for producing a marker on a substrate, lithographic apparatus and device manufacturing method
JP2008124142A (ja) * 2006-11-09 2008-05-29 Dainippon Screen Mfg Co Ltd 位置検出方法、位置検出装置、パターン描画装置及び被検出物
JP2009223262A (ja) 2008-03-19 2009-10-01 Orc Mfg Co Ltd 露光システムおよび露光方法
JP5245506B2 (ja) * 2008-04-16 2013-07-24 株式会社ニコン ステージ装置、露光方法及び装置、並びにデバイス製造方法
JP5961429B2 (ja) 2012-03-30 2016-08-02 株式会社アドテックエンジニアリング 露光描画装置及び露光描画方法
JP5813556B2 (ja) * 2012-03-30 2015-11-17 株式会社アドテックエンジニアリング 露光描画装置、プログラム及び露光描画方法
CN104714373B (zh) * 2015-03-23 2016-10-19 上海新微技术研发中心有限公司 硅片正背面图形高精度转移的方法
JP6925783B2 (ja) * 2016-05-26 2021-08-25 株式会社アドテックエンジニアリング パターン描画装置及びパターン描画方法
JP6783172B2 (ja) * 2017-03-24 2020-11-11 株式会社Ｓｃｒｅｅｎホールディングス 描画装置および描画方法
JP6900284B2 (ja) * 2017-09-27 2021-07-07 株式会社Ｓｃｒｅｅｎホールディングス 描画装置および描画方法
JP6994806B2 (ja) * 2017-10-31 2022-01-14 株式会社アドテックエンジニアリング 両面露光装置及び両面露光方法
JP6978284B2 (ja) * 2017-11-09 2021-12-08 株式会社日立ハイテクファインシステムズ 露光システム、露光方法、及び表示用パネル基板の製造方法
JP7045890B2 (ja) * 2018-03-20 2022-04-01 株式会社Ｓｃｒｅｅｎホールディングス パターン描画装置およびパターン描画方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201837601A (zh) * 2017-03-15 2018-10-16 大陸商上海微電子裝備（集團）股份有限公司 光蝕刻裝置及方法
TW201923485A (zh) * 2017-10-31 2019-06-16 日商亞多特克工程股份有限公司 兩面曝光裝置
TW202018422A (zh) * 2018-06-22 2020-05-16 日商斯庫林集團股份有限公司 標記位置檢測裝置、描繪裝置以及標記位置檢測方法
TW202016984A (zh) * 2018-09-20 2020-05-01 日商斯庫林集團股份有限公司 描繪裝置以及描繪方法

Also Published As

Publication number Publication date
KR20220040365A (ko) 2022-03-30
JP7458950B2 (ja) 2024-04-01
TW202212985A (zh) 2022-04-01
JP2022052397A (ja) 2022-04-04
KR102653607B1 (ko) 2024-04-01
CN114253086A (zh) 2022-03-29

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