JP7430489B2 - 静電チャック、静電チャック装置 - Google Patents
静電チャック、静電チャック装置 Download PDFInfo
- Publication number
- JP7430489B2 JP7430489B2 JP2019005052A JP2019005052A JP7430489B2 JP 7430489 B2 JP7430489 B2 JP 7430489B2 JP 2019005052 A JP2019005052 A JP 2019005052A JP 2019005052 A JP2019005052 A JP 2019005052A JP 7430489 B2 JP7430489 B2 JP 7430489B2
- Authority
- JP
- Japan
- Prior art keywords
- electrostatic chuck
- dielectric plate
- base plate
- less
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 claims description 64
- 238000001179 sorption measurement Methods 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 22
- 229910052594 sapphire Inorganic materials 0.000 claims description 21
- 239000010980 sapphire Substances 0.000 claims description 21
- 239000007767 bonding agent Substances 0.000 claims description 17
- 239000000919 ceramic Substances 0.000 claims description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 11
- 230000003746 surface roughness Effects 0.000 claims description 10
- 239000003507 refrigerant Substances 0.000 claims description 5
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims description 5
- 239000002131 composite material Substances 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 4
- 230000005496 eutectics Effects 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 239000000428 dust Substances 0.000 description 5
- 238000010304 firing Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 239000002826 coolant Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000004840 adhesive resin Substances 0.000 description 1
- 229920006223 adhesive resin Polymers 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Mechanical Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019005052A JP7430489B2 (ja) | 2019-01-16 | 2019-01-16 | 静電チャック、静電チャック装置 |
| KR1020190066936A KR102257529B1 (ko) | 2019-01-16 | 2019-06-05 | 정전 척 및 정전 척 장치 |
| US16/741,178 US11367646B2 (en) | 2019-01-16 | 2020-01-13 | Electrostatic chuck and electrostatic chuck apparatus including the same |
| CN202010041910.XA CN111446197B (zh) | 2019-01-16 | 2020-01-15 | 静电吸盘和包括其的静电吸盘装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019005052A JP7430489B2 (ja) | 2019-01-16 | 2019-01-16 | 静電チャック、静電チャック装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020113692A JP2020113692A (ja) | 2020-07-27 |
| JP2020113692A5 JP2020113692A5 (enExample) | 2022-01-20 |
| JP7430489B2 true JP7430489B2 (ja) | 2024-02-13 |
Family
ID=71516817
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019005052A Active JP7430489B2 (ja) | 2019-01-16 | 2019-01-16 | 静電チャック、静電チャック装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US11367646B2 (enExample) |
| JP (1) | JP7430489B2 (enExample) |
| KR (1) | KR102257529B1 (enExample) |
| CN (1) | CN111446197B (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102725094B1 (ko) * | 2018-03-23 | 2024-11-04 | 스미토모 오사카 세멘토 가부시키가이샤 | 정전 척 장치 및 정전 척 장치의 제조 방법 |
| JP7388573B2 (ja) * | 2020-10-21 | 2023-11-29 | 住友大阪セメント株式会社 | セラミックス接合体、静電チャック装置、セラミックス接合体の製造方法 |
| JP7744516B2 (ja) * | 2021-10-28 | 2025-09-25 | インテグリス・インコーポレーテッド | 誘電体層を含む上部セラミック層を含む静電チャック、ならびに関連する方法および構造 |
| CN117637572A (zh) * | 2022-08-12 | 2024-03-01 | 中微半导体设备(上海)股份有限公司 | 一种电压正负连续可调的静电夹盘及其装置和方法 |
| KR102651394B1 (ko) | 2022-10-19 | 2024-03-29 | 엘지디스플레이 주식회사 | 대면적 디스플레이 제조를 위한 수평 고정형 유기 증착 장비용 기판 처리 장치 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002170872A (ja) | 2000-12-04 | 2002-06-14 | Kyocera Corp | 静電チャック |
| JP2002170871A (ja) | 2000-12-04 | 2002-06-14 | Kyocera Corp | 静電チャック |
| JP2005524247A (ja) | 2002-05-01 | 2005-08-11 | トレック・インコーポレーテッド | 静電ウェハクランプ装置のための進歩したプラテン |
| JP2009272646A (ja) | 2007-09-11 | 2009-11-19 | Canon Anelva Corp | スパッタリング装置 |
| JP2014198662A (ja) | 2013-03-15 | 2014-10-23 | 日本碍子株式会社 | 緻密質複合材料、その製法及び半導体製造装置用部材 |
| WO2016052115A1 (ja) | 2014-09-30 | 2016-04-07 | 住友大阪セメント株式会社 | 静電チャック装置 |
| JP2017206436A (ja) | 2016-01-27 | 2017-11-24 | 住友大阪セメント株式会社 | セラミックス材料、静電チャック装置 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06291175A (ja) * | 1993-04-01 | 1994-10-18 | Kyocera Corp | 静電チャック |
| JPH0982788A (ja) | 1995-07-10 | 1997-03-28 | Anelva Corp | 静電チャックおよびその製造方法 |
| JP3486108B2 (ja) * | 1998-06-30 | 2004-01-13 | 株式会社東芝 | 電力用抵抗体、その製造方法および電力用抵抗器 |
| TW460756B (en) * | 1998-11-02 | 2001-10-21 | Advantest Corp | Electrostatic deflector for electron beam exposure apparatus |
| JP2001308053A (ja) * | 2000-04-26 | 2001-11-02 | Okamoto Machine Tool Works Ltd | 銅スカム付着電極または銅配線を有する基板の洗浄方法 |
| JP2002110772A (ja) * | 2000-09-28 | 2002-04-12 | Kyocera Corp | 電極内蔵セラミックス及びその製造方法 |
| JP2002305237A (ja) * | 2001-04-05 | 2002-10-18 | Hitachi Ltd | 半導体製造方法および製造装置 |
| JP4034145B2 (ja) * | 2002-08-09 | 2008-01-16 | 住友大阪セメント株式会社 | サセプタ装置 |
| JP4482472B2 (ja) * | 2005-03-24 | 2010-06-16 | 日本碍子株式会社 | 静電チャック及びその製造方法 |
| TWI475594B (zh) * | 2008-05-19 | 2015-03-01 | Entegris Inc | 靜電夾頭 |
| CN100560261C (zh) * | 2008-05-29 | 2009-11-18 | 吉林大学 | 具有跟踪电极的半导陶瓷回转表面放电磨削加工装置 |
| JP5189928B2 (ja) * | 2008-08-18 | 2013-04-24 | 日本碍子株式会社 | セラミックス部材の作成方法及び静電チャック |
| KR20100090561A (ko) * | 2009-02-06 | 2010-08-16 | 이지스코 주식회사 | 이종 물질 간 접합구조를 갖는 정전척 및 그 제조방법 |
| KR20100137679A (ko) * | 2009-06-23 | 2010-12-31 | 이지스코 주식회사 | 글라스 정전척 및 그 제조방법 |
| WO2013047555A1 (ja) * | 2011-09-28 | 2013-04-04 | 住友大阪セメント株式会社 | 静電チャック装置 |
| JP5441019B1 (ja) * | 2012-08-29 | 2014-03-12 | Ｔｏｔｏ株式会社 | 静電チャック |
| WO2015013142A1 (en) * | 2013-07-22 | 2015-01-29 | Applied Materials, Inc. | An electrostatic chuck for high temperature process applications |
| JP6627647B2 (ja) * | 2016-05-24 | 2020-01-08 | Tdk株式会社 | 積層膜、電子デバイス基板、電子デバイス及び積層膜の製造方法 |
-
2019
- 2019-01-16 JP JP2019005052A patent/JP7430489B2/ja active Active
- 2019-06-05 KR KR1020190066936A patent/KR102257529B1/ko active Active
-
2020
- 2020-01-13 US US16/741,178 patent/US11367646B2/en active Active
- 2020-01-15 CN CN202010041910.XA patent/CN111446197B/zh active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002170872A (ja) | 2000-12-04 | 2002-06-14 | Kyocera Corp | 静電チャック |
| JP2002170871A (ja) | 2000-12-04 | 2002-06-14 | Kyocera Corp | 静電チャック |
| JP2005524247A (ja) | 2002-05-01 | 2005-08-11 | トレック・インコーポレーテッド | 静電ウェハクランプ装置のための進歩したプラテン |
| JP2009272646A (ja) | 2007-09-11 | 2009-11-19 | Canon Anelva Corp | スパッタリング装置 |
| JP2014198662A (ja) | 2013-03-15 | 2014-10-23 | 日本碍子株式会社 | 緻密質複合材料、その製法及び半導体製造装置用部材 |
| WO2016052115A1 (ja) | 2014-09-30 | 2016-04-07 | 住友大阪セメント株式会社 | 静電チャック装置 |
| JP2017206436A (ja) | 2016-01-27 | 2017-11-24 | 住友大阪セメント株式会社 | セラミックス材料、静電チャック装置 |
Also Published As
| Publication number | Publication date |
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| KR102257529B1 (ko) | 2021-06-01 |
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