JP7398969B2 - 基板処理方法、基板処理装置および記憶媒体 - Google Patents

基板処理方法、基板処理装置および記憶媒体 Download PDF

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Publication number
JP7398969B2
JP7398969B2 JP2020007203A JP2020007203A JP7398969B2 JP 7398969 B2 JP7398969 B2 JP 7398969B2 JP 2020007203 A JP2020007203 A JP 2020007203A JP 2020007203 A JP2020007203 A JP 2020007203A JP 7398969 B2 JP7398969 B2 JP 7398969B2
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Prior art keywords
film
etching
etching rate
substrate
chemical solution
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Japanese (ja)
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JP2020145412A (ja
Inventor
拓巳 本田
興司 香川
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to CN202410062216.4A priority Critical patent/CN117747419A/zh
Priority to CN202010107820.6A priority patent/CN111640661B/zh
Priority to KR1020200023559A priority patent/KR20200105755A/ko
Priority to US16/802,936 priority patent/US11626294B2/en
Publication of JP2020145412A publication Critical patent/JP2020145412A/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
JP2020007203A 2019-03-01 2020-01-21 基板処理方法、基板処理装置および記憶媒体 Active JP7398969B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN202410062216.4A CN117747419A (zh) 2019-03-01 2020-02-21 基板处理方法、基板处理装置以及存储介质
CN202010107820.6A CN111640661B (zh) 2019-03-01 2020-02-21 基板处理方法、基板处理装置以及存储介质
KR1020200023559A KR20200105755A (ko) 2019-03-01 2020-02-26 기판 처리 방법, 기판 처리 장치 및 기억 매체
US16/802,936 US11626294B2 (en) 2019-03-01 2020-02-27 Substrate processing method, substrate processing apparatus and recording medium

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019037982 2019-03-01
JP2019037982 2019-03-01

Publications (2)

Publication Number Publication Date
JP2020145412A JP2020145412A (ja) 2020-09-10
JP7398969B2 true JP7398969B2 (ja) 2023-12-15

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JP (1) JP7398969B2 (zh)
KR (1) KR20200105755A (zh)
CN (1) CN117747419A (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230154025A (ko) * 2021-03-10 2023-11-07 카오카부시키가이샤 에칭액 조성물
WO2022196384A1 (ja) * 2021-03-18 2022-09-22 東京エレクトロン株式会社 基板処理方法および基板処理装置
WO2023132286A1 (ja) * 2022-01-04 2023-07-13 東京エレクトロン株式会社 基板処理装置および基板処理方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003338506A (ja) 2002-05-21 2003-11-28 Nec Corp 薄膜トランジスタの製造方法
JP2005057304A (ja) 1998-06-25 2005-03-03 Samsung Electronics Co Ltd 半導体素子
JP2010153887A (ja) 2010-02-05 2010-07-08 Tokyo Electron Ltd 処理装置
JP2014027274A (ja) 2012-07-24 2014-02-06 Planse Se エッチング液組成物、及び多重金属膜のエッチング方法｛ｅｔｃｈａｎｔｃｏｍｐｏｓｉｔｉｏｎ、ａｎｄｍｅｔｈｏｄｆｏｒｅｔｃｈｉｎｇａｍｕｌｔｉ−ｌａｙｅｒｅｄｍｅｔａｌｆｉｌｍ｝
US20150200112A1 (en) 2014-01-10 2015-07-16 Samsung Electronics Co., Ltd. Methods of forming conductive patterns and methods of manufacturing semiconductor devices using the same
JP2016225502A (ja) 2015-06-01 2016-12-28 株式会社東芝 基板処理方法および基板処理装置
WO2017169155A1 (ja) 2016-03-31 2017-10-05 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体
JP2018006715A (ja) 2016-07-08 2018-01-11 関東化學株式会社 エッチング液組成物およびエッチング方法
JP2019029417A (ja) 2017-07-26 2019-02-21 東京エレクトロン株式会社 基板液処理方法、基板液処理装置及び記憶媒体

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5448521A (en) 1993-11-12 1995-09-05 International Business Machines Corporation Connecting a short word length non-volatile memory to a long word length address/data multiplexed bus

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005057304A (ja) 1998-06-25 2005-03-03 Samsung Electronics Co Ltd 半導体素子
JP2003338506A (ja) 2002-05-21 2003-11-28 Nec Corp 薄膜トランジスタの製造方法
JP2010153887A (ja) 2010-02-05 2010-07-08 Tokyo Electron Ltd 処理装置
JP2014027274A (ja) 2012-07-24 2014-02-06 Planse Se エッチング液組成物、及び多重金属膜のエッチング方法｛ｅｔｃｈａｎｔｃｏｍｐｏｓｉｔｉｏｎ、ａｎｄｍｅｔｈｏｄｆｏｒｅｔｃｈｉｎｇａｍｕｌｔｉ−ｌａｙｅｒｅｄｍｅｔａｌｆｉｌｍ｝
US20150200112A1 (en) 2014-01-10 2015-07-16 Samsung Electronics Co., Ltd. Methods of forming conductive patterns and methods of manufacturing semiconductor devices using the same
JP2016225502A (ja) 2015-06-01 2016-12-28 株式会社東芝 基板処理方法および基板処理装置
WO2017169155A1 (ja) 2016-03-31 2017-10-05 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体
JP2018006715A (ja) 2016-07-08 2018-01-11 関東化學株式会社 エッチング液組成物およびエッチング方法
JP2019029417A (ja) 2017-07-26 2019-02-21 東京エレクトロン株式会社 基板液処理方法、基板液処理装置及び記憶媒体

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JP2020145412A (ja) 2020-09-10
CN117747419A (zh) 2024-03-22
KR20200105755A (ko) 2020-09-09

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